Abstract: A method for removal of metallic residue from a substrate after a plasma etch process in a semiconductor substrate processing system by cleaning the substrate in a hydrogen fluoride solution.

Abstract: A method of plasma etching a layer of dielectric material having a dielectric constant that is greater than four (4). The method includes exposing the dielectric material layer to a plasma comprising a hydrocarbon gas and a halogen containing gas.

Abstract: A method of patterning a layer of magnetic material to form isolated magnetic regions. The method forms a mask on a film stack comprising a layer of magnetic material such that the protected and unprotected regions are defined. The unprotected regions are etched in a high temperature environment to form isolated magnetic regions.

Abstract: A method for removal of residues after plasma etching a film stack comprising a first layer and a sacrificial layer. The method treats a substrate containing the film stack after the first layer of the film stack has been etched to remove residue produced during the etching process. The treatment is performed in a buffered oxide etch wet dip solution that removes the residue and the sacrificial layer.

Abstract: A method for removal of residue after plasma etching a film stack comprising a patterned photoresist material layer, a hard mask layer, a conductive layer, and a magnetic layer, wherein the patterned photoresist material layer and the hard mask layer form a dual mask. The method cleans a substrate containing the film stack after the dual mask of the film stack has been etched to remove residue produced during the etching process. The cleaning step is performed in a solution comprising hydrogen peroxide and ammonium hydroxide that removes the residue.

Abstract: Method of etching a ferroelectric layer includes etching an upper electrode and partially through a ferroelectric layer. A dielectric material is subsequently deposited upon the upper electrode and the partially etched ferroelectric layer. A second etch step completely etches through the remaining portion of the ferroelectric layer and also etches lower electrodes. A random access memory apparatus is constructed that includes a first conductive layer, a dielectric layer disposed upon the first conductive layer, a second conductive layer disposed upon the dielectric layer, where such layers form a stack having a sidewall. Further, the sidewall has a protective dielectric film disposed thereon and extending from the second layer down to the dielectric layer.

Abstract: A method for etching magnetic and ferroelectric materials using a pulsed substrate biasing technique (PSBT) that applies a plurality of processing cycles to the substrate, where each cycle comprises a period of plasma etching without substrate bias and a period of plasma etching with the substrate bias. In exemplary applications, the method is used for fabricating magneto-resistive random access memory (MRAM) and ferroelectric random access memory (FeRAM) devices.

Abstract: A method of etching high dielectric constant materials (a material with a dielectric constant greater than 4) using a halogen gas, reducing gas, and passivating gas chemistry. An embodiment of the method is accomplished using chlorine, carbon monoxide, and nitrogen to etch and passivate a hafnium dioxide layer.

Abstract: A method for preventing electrical short circuits in a multi-layer magnetic film stack comprises providing a film stack that includes a layer of magnetic material having an exposed surface. A protective layer is deposited on the exposed surface of the magnetic layer. The protective layer may comprise, for example, a fluorocarbon or a hydrofluorocarbon. The film stack is etched and the protective layer protects the exposed surface from a conductive residue produced while etching the film stack. The method may be used in film stacks to form a magneto-resistive random access memory (MRAM) device.

Abstract: A method for fabricating a gate structure having a polysilicon electrode using an oxygen-free chemistry to etch the polysilicon. In one embodiment, the chemistry further includes nitrogen.

Abstract: A method of etching metal layers (e.g., niobium (Nb), titanium (Ti), tantalum (Ta), and the like) using a gas mixture comprising a chlorine-containing gas and a fluorine-containing gas is disclosed. The method provides a high etch selectivity for the metal layers over photoresist.

Abstract: A method for fabricating a gate structure of a field effect transistor is disclosed. The gate structure is fabricated by sequentially etching a material stack comprising a gate electrode layer formed on a gate dielectric layer. Prior to etching the gate dielectric layer, polymeric residues formed on the substrate when the gate electrode is etched are removed. The polymeric residue is removed by exposing the substrate to a plasma comprising one or more fluorocarbon containing gases and at least one inert gas. structure.

Abstract: A method of plasma etching a metal layer (e.g., titanium (Ti), tantalum (Ta), tungsten (W), and the like) or a metal-containing layer (e.g., tantalum silicon nitride (TaSiN), titanium nitride (TiN), tungsten nitride (WN), and the like) formed on a hafnium-based dielectric material is disclosed. The metal/metal-containing layer is etched using a gas mixture comprising a halogen-containing gas and a fluorine-containing gas. The fluorine within the gas mixture provides a high etch selectivity for the hafnium-based dielectric material.

Abstract: A method of etching high dielectric constant materials using halogen gas and reducing gas chemistry. An embodiment of the method is accomplished using a 20 to 300 sccm of chlorine and 2 to 200 sccm of carbon monoxide, regulated to a total chamber pressure of 2-100 mTorr to etch a hafnium oxide layer.

Abstract: A method of etching high dielectric constant materials using halogen gas and reducing gas chemistry. An embodiment of the method is accomplished using a 20 to 300 sccm of chlorine and 2 to 200 sccm of carbon monoxide, regulated to a total chamber pressure of 2-100 mTorr to etch a hafnium oxide layer.

Abstract: A method for etching magnetic and ferroelectric materials using a pulsed substrate biasing technique (PSBT) that applies a plurality of processing cycles to the substrate, where each cycle comprises a period of plasma etching without substrate bias and a period of plasma etching with the substrate bias. In exemplary applications, the method is used for fabricating magneto-resistive random access memory (MRAM) and ferroelectric random access memory (FeRAM) devices.

Abstract: A method of fabricating a structure having a tapered profile using a low temperature plasma etch (LTPE) process. In one embodiment, the LTPE process uses a gas comprising carbon tetrafluoride (CF4), trifluoromethane (CHF3), and nitrogen (N2) to fabricate the structure from a material layer of at least one of tantalum (Ta), tantalum nitride (TaN), and the like.

Abstract: Method of etching a ferroelectric layer comprises etching an upper electrode and partially through a ferroelectric layer. A dielectric material is subsequently deposited upon the upper electrode and the partially etched ferroelectric layer. A second etch step completely etches through the remaining portion of the ferroelectric layer and also etches lower electrodes. A random access memory apparatus is constructed that includes a first conductive layer, a dielectric layer disposed upon the first conductive layer, a second conductive layer disposed upon the dielectric layer, where all of said layers form a stack having a sidewall. Further, the sidewall has a protective film disposed thereon and extends from the second layer down to the dielectric layer. The protective sidewall film is fabricated from a dielectric material.

Abstract: A method of fabricating a gate structure of a field effect transistor comprising processes of forming an &agr;-carbon mask and plasma etching a gate electrode and a gate dielectric using the &agr;-carbon mask. In one embodiment, the gate dielectric comprises hafnium dioxide.

Abstract: A method of patterning a layer of magnetic material to form isolated magnetic regions. The method forms a mask on a film stack comprising a layer of magnetic material such that the protected and unprotected regions are defined. The unprotected regions are etched in a high temperature environment to form isolated magnetic regions.