Patents by Inventor Pai-Li Lin

Pai-Li Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • TRENCH DMOS DEVICE WITH IMPROVED TERMINATION STRUCTURE FOR HIGH VOLTAGE APPLICATIONS
    Publication number: 20130168765
    Abstract: A termination structure is provided for a semiconductor device. The termination structure includes a semiconductor substrate having an active region and a termination region. A termination trench is located in the termination region and extends from a boundary of the active region toward an edge of the semiconductor substrate. A MOS gate is formed on a sidewall of the termination trench adjacent the boundary. At least one guard ring trench is formed in the termination region on a side of the termination trench remote from the active region. A termination structure oxide layer is formed on the termination trench and the guard ring trench. A first conductive layer is formed on a backside surface of the semiconductor substrate. A second conductive layer is formed atop the active region and the termination region.
    Type: Application
    Filed: January 4, 2012
    Publication date: July 4, 2013
    Applicant: Vishay General Semiconductor LLC
    Inventors: Yih-Yin Lin, Pai-Li Lin, Chih-Wei Hsu