Abstract: It is an object of the present technology to overcome the disadvantages of conventional chlorination of a copper phthalocyanine which produces copper phthalocyanine, wherein the number of chlorines is less than than or equal to 4. The pigments described herein contain less chlorine than standard commercial grades of tetrachlorinated (or greater) copper phthalocyanine pigments while achieving similar color space, chromaticity, fastness properties, and color travel in automotive waterborne and solvent borne systems. The inventive pigments are more advantageous from a toxicity and environmental perspective, and allow the manufacturer to produce pigments in a safe and economical manner.

Abstract: The present technology is directed to pigment compositions having a pure, or substantially pure, ? crystal form, containing less chlorine than standard tetrachlorinated copper phthalocyanine pigments, while giving similar color space, chromaticity, fastness properties, and color travel in automotive waterborne and solvent borne systems. These pigments are more advantageous from a toxicity and environmental perspective, and allow the manufacturer to produce pigments in a safe and economical manner.

Abstract: It is an object of the present technology to overcome the disadvantages of conventional chlorination of a copper phthalocyanine which produces copper phthalocyanine, wherein the number of chlorines is less than than or equal to 4. The pigments described herein contain less chlorine than standard commercial grades of tetrachlorinated (or greater) copper phthalocyanine pigments while achieving similar color space, chromaticity, fastness properties, and color travel in automotive waterborne and solvent borne systems. The inventive pigments are more advantageous from a toxicity and environmental perspective, and allow the manufacturer to produce pigments in a safe and economical manner.

Abstract: It is an object of the present technology to overcome the disadvantages of conventional chlorination of a copper phthalocyanine which produces copper phthalocyanine, wherein the number of chlorines is less than or equal to 4. The pigments described herein contain less chlorine than standard commercial grades of tetrachlorinated (or greater) copper phthalocyanine pigments while achieving similar color space, chromaticity, fastness properties, and color travel in automotive waterborne and solvent borne systems. The inventive pigments are more advantageous from a toxicity and environmental perspective, and allow the manufacturer to produce pigments in a safe and economical manner.

Abstract: The present technology is directed to pigment compositions having a pure, or substantially pure, ? crystal form, containing less chlorine than standard tetrachlorinated copper phthalocyanine pigments, while giving similar color space, chromaticity, fastness properties, and color travel in automotive waterborne and solvent borne systems. These pigments are more advantageous from a toxicity and environmental perspective, and allow the manufacturer to produce pigments in a safe and economical manner.

Abstract: It is an object of the present technology to overcome the disadvantages of conventional chlorination of a copper phthalocyanine which produces copper phthalocyanine, wherein the number of chlorines is less than or equal to 4. The pigments described herein contain less chlorine than standard commercial grades of tetrachlorinated (or greater) copper phthalocyanine pigments while achieving similar color space, chromaticity, fastness properties, and color travel in automotive waterborne and solvent borne systems. The inventive pigments are more advantageous from a toxicity and environmental perspective, and allow the manufacturer to produce pigments in a safe and economical manner.

Abstract: A removal composition and process for removing low-k dielectric material, etch stop material, and/or metal stack material from a rejected microelectronic device structure having same thereon. The removal composition includes hydrofluoric acid. The composition achieves at least partial removal of the material(s) from the surface of the microelectronic device structure having same thereon, for recycling and/or reuse of said structure, without damage to the underlying polysilicon or bare silicon layer employed in the semiconductor architecture.

Abstract: Compositions useful in reworking microelectronic device wafers, i.e., removing photoresist from rejected wafers, without damaging underlying layers and structures such as cap layers, interlevel dielectric layers, etch stop layers and metal interconnect material. The semi-aqueous compositions include at least one alkali and/or alkaline earth metal basic salt, at least one organic solvent, water, optionally at least one quaternary ammonium basic salt, optionally at least one metal corrosion inhibitor and optionally at least one water-soluble polymer surfactant.

Abstract: A method and composition for removing bulk and ion-implanted photoresist and/or post-etch residue material from densely patterned microelectronic devices is described. The composition includes a co-solvent, a chelating agent, optionally an ion pairing reagent, and optionally a surfactant. The composition may further include dense fluid. The compositions effectively remove the photoresist and/or post-etch residue material from the microelectronic device without substantially over-etching the underlying silicon-containing layer(s) and metallic interconnect materials.

Abstract: A removal composition and process for removing low-k dielectric material, etch stop material, and/or metal stack material from a rejected microelectronic device structure having same thereon. The removal composition includes hydrofluoric acid. The composition achieves at least partial removal of the material(s) from the surface of the microelectronic device structure having same thereon, for recycling and/or reuse of said structure, without damage to the underlying polysilicon or bare silicon layer employed in the semiconductor architecture.

Abstract: A removal composition and process for removing low-k dielectric material, etch stop material, and/or metal stack material from a rejected microelectronic device structure having same thereon. The removal composition includes hydrofluoric acid. The composition achieves at least partial removal of the material(s) from the surface of the microelectronic device structure having same thereon, for recycling and/or reuse of said structure, without damage to the underlying polysilicon or bare silicon layer employed in the semiconductor architecture.

Abstract: Compositions useful in reworking microelectronic device wafers, i.e., removing photoresist from rejected wafers, without damaging underlying layers and structures such as cap layers, interlevel dielectric layers, etch stop layers and metal interconnect material. The semi-aqueous compositions include at least one alkali and/or alkaline earth metal basic salt, at least one organic solvent, water, optionally at least one quaternary ammonium basic salt, optionally at least one metal corrosion inhibitor and optionally at least one water-soluble polymer surfactant.

Abstract: A method and composition for removing copper-containing post-etch and/or post-ash residue from patterned microelectronic devices is described. The removal composition includes a diluent, a solvent and a copper corrosion inhibitor, wherein the diluent may be a dense fluid or a liquid solvent. The removal compositions effectively remove the copper-containing post-etch residue from the microelectronic device without damaging exposed low-k dielectric and metal interconnect materials.

Abstract: A method and composition for removing hardened photoresist, post-etch photoresist, and/or bottom anti-reflective coating from a microelectronic device is described. The composition may include a dense fluid, e.g., a supercritical fluid, and a dense fluid concentrate including a co-solvent, optionally a fluoride source, and optionally an acid. The dense fluid compositions substantially remove the contaminating residue and/or layers from the microelectronic device prior to subsequent processing, thus improving the morphology, performance, reliability and yield of the microelectronic device.

Abstract: A continuous-flow supercritical fluid (SCF) apparatus and method for the deposition of thin films onto microelectronic devices or the removal of unwanted layers, particles and/or residues from microelectronic devices having same thereon. The SCF apparatus preferably includes a dynamic mixer to ensure homogeneous mixing of the SCF and other chemical components.

Abstract: A method and composition for removing bulk and ion-implanted photoresist and/or post-etch residue material from densely patterned microelectronic devices is described. The composition includes a co-solvent, a chelating agent, optionally an ion pairing reagent, and optionally a surfactant. The composition may further include dense fluid. The compositions effectively remove the photoresist and/or post-etch residue material from the microelectronic device without substantially over-etching the underlying silicon-containing layer(s) and metallic interconnect materials.

Abstract: A removal composition and process for removing low-k dielectric material, etch stop material, and/or metal stack material from a rejected microelectronic device structure having same thereon. The removal composition includes hydrofluoric acid. The composition achieves at least partial removal of the material(s) from the surface of the microelectronic device structure having same thereon, for recycling and/or reuse of said structure, without damage to the underlying polysilicon or bare silicon layer employed in the semiconductor architecture.

Abstract: A removal composition and process for removing silicon-containing layers from a microelectronic device having said layers thereon. The removal composition selectively removes layers including, but not limited to, silicon oxide, plasma enhanced tetraethyl orthosilicate (P-TEOS), borophosphosilicate glass (BPSG), plasma enhanced oxide (PEOX), high density plasma oxide (HDP), phosphosilicate glass (PSG), spin-on-dielectrics (SOD), thermal oxide, updoped silicate glass, sacrificial oxides, silicon-containing organic polymers, silicon-containing hybrid organic/inorganic materials, organosilicate glass (OSG), TEOS, fluorinated silicate glass (FSG), hemispherical grain (HSQ), carbon-doped oxide (CDO) glass, and combinations thereof, relative to lower electrode, device substrate, and/or etch stop layer materials.

Abstract: Chemical mechanical polishing compositions including a carbon dioxide-based solvent, an oxidizing agent, and a chelating agent are formed and used with CMP processes and systems. Methods for determining the endpoint of a CMP process are also provided.