Patents by Inventor Pamela René Fischer

Pamela René Fischer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7718518
    Abstract: A doped silicon layer is formed in a batch process chamber at low temperatures. The silicon precursor for the silicon layer formation is a polysilane, such as trisilane, and the dopant precursor is an n-type dopant, such as phosphine. The silicon precursor can be flowed into the process chamber with the flow of the dopant precursor or separately from the flow of the dopant precursor. Surprisingly, deposition rate is independent of dopant precursor flow, while dopant incorporation linearly increases with the dopant precursor flow.
    Type: Grant
    Filed: December 14, 2006
    Date of Patent: May 18, 2010
    Assignee: ASM International N.V.
    Inventors: Peter Marc Zagwijn, Theodorus Gerardus Maria Oosterlaken, Steven R. A. Van Aerde, Pamela René Fischer