Patents by Inventor Pan Chieh Yu

Pan Chieh Yu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240421194
    Abstract: The present disclosure describes a semiconductor device having artificial field plates. The semiconductor device includes a first gallium nitride (GaN) layer on a substrate, an aluminum gallium nitride (AlGaN) layer on the first GaN layer, and a second GaN layer on the AlGaN layer. The first and second GaN layers includes different types of dopants. The semiconductor device further includes a gate contact structure in contact with the second GaN layer, first and second source/drain (S/D) contact structures in contact with the AlGaN layer, one or more artificial field plates between the gate contact structure and the first S/D contact structure. The first and second S/D contact structures are disposed at opposite sides of the gate contact structure. The one or more artificial field plates are separated from the first and second S/D contact structures and above the AlGaN layer.
    Type: Application
    Filed: June 16, 2023
    Publication date: December 19, 2024
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yi-An LAI, Pan Chieh Yu, Chih-Hua WANG, Chan-Hong CHERN, Cheng-Hsiang HSIEH