Abstract: The present disclosure relates to genetically engineered bacteria for producing D-pantothenic acid, a construction method thereof, and application of the genetically engineered bacteria in preparation of the D-pantothenic acid through microbial fermentation. Mainly, (1) carbon flux is further directed toward the synthesis of the D-pantothenic acid by increasing the copy number of key genes in the synthesis pathway of pantothenic acid in an Escherichia coli (E. Coli) organism; and (2) in order to further enhance the carbon flux to direct toward the synthesis of the D-pantothenic acid, glycolysis front-end genes are activated by weakening a nitrogen limitation-negative regulatory transcription factor to drive the carbon flow, phosphoenolpyruvic acid is saved, the central carbon flow entering TCA is reduced, and a plasma-free and antibiotic-free genetically engineered bacterium strain for producing D-pantothenic acid is obtained. Finally, D-pantothenic acid shake flask titer is increased by 87.

Abstract: A solar cell (10) includes a sector-shaped cell body, front-surface electrodes (11) and a plurality of fine grid lines (12) are provided at a front surface of the cell body, the front-surface electrodes (11) and the fine grid lines (12) intersect and are electrically connected, back-surface electrodes (13) are provided at a back surface of the cell body, and a quantity of the front-surface electrodes (11) and a quantity of the back-surface electrodes (13) are equal. The solar-cell module includes a plurality of solar-cell strings (20) that are sequentially arranged and are electrically connected to each other, a plurality of protrusions (23) are provided on two sides of the solar-cell strings (20), a depression part (24) is formed between every two neighboring instances of the protrusions (23), and the protrusions (23) of each of the solar-cell strings (20) protrude into the depression parts (24) of neighboring solar-cell strings (20).

Abstract: The present disclosure relates to a method for establishing an oral ulcer animal model with Yin-deficiency and fire-excess syndrome based on sleep deprivation, comprising the following steps of: burning buccal mucosa of a rat with phenol to cause a white injury, and obtaining the oral ulcer animal model after 24-48 h; placing the animal model in a sleep deprivation device for 2-7 days; wherein the device is composed of a mouse box in which a plurality of platforms with a diameter of 4-8 cm are arranged at an interval of 10-20 cm from each other; and water is filled among the platforms, and the platforms are about 0.1-2 cm higher than a water surface. The present disclosure overcomes the defects of single evaluation index, short model duration, and unconformity of etiology and clinic existed in the prior art.

Abstract: A method for measuring a film thickness of a film on an edge of a wafer, comprising: off-line detecting a film at a detection point on the wafer by a four-point probe method to obtain a real film thickness of the film at the detection point, and detecting a distance from the detection point to a center of the wafer using a length measurement, in which the detection point is located between the center of the wafer and a edge point of the wafer; detecting the film at the detection point using an eddy current transducer to obtain a detected film thickness of the film at the detection point; determining a film thickness measuring correction factor according to the real film thickness, the detected film thickness at the detection point and the distance from the detection point to the center of the wafer; and measuring the film on an edge of the wafer using the eddy current transducer to obtain a measured film thickness of the film on the edge of the wafer and correcting the measured film thickness of the film on a

Abstract: A chemical-mechanical polishing machine includes a work table, polishing platen mounted onto the work table, pad conditioner and slurry-delivery device mounted on the work table and disposed near the polishing platen, and polishing-head support mounted on the work table and including a base plate and supporting side plates. The base plate is formed with a groove in a “thickness” direction. A loading and unloading table is mounted on the work table, disposed below the base plate, and opposed to the polishing platen. A polishing head is rotatably disposed on the polishing-head support, movable in the longitudinal direction, and passes through the groove to extend downwardly. A robotic manipulator is disposed near the work table for placing a wafer on the loading and unloading table and taking the wafer away from it. A chemical-mechanical polishing apparatus includes an array of a plurality of the machine.

Abstract: A measuring device for measuring a film thickness of a silicon wafer (1) comprises: position and velocity sensors (4) linearly arranged along a longitudinal direction into first and second position and velocity sensor arrays spaced apart from each other in a lateral direction, in which the position and velocity sensors (4) in the first position and velocity sensor array are in one-to-one correspondence with the position and velocity sensors (4) in the second position and velocity sensor array in the lateral direction; an eddy current sensor (2) disposed in a symmetrical plane between the first position and velocity sensor array and the second position and velocity sensor array and perpendicular to the lateral direction; and a controller connected to the position and velocity sensors (4) and the eddy current sensor (2) respectively for controlling measurement of the thickness of the film according to detection signals from the position and velocity sensors (4) and the eddy current sensor (2).

Abstract: A measuring device for measuring a film thickness of a silicon wafer (1) comprises: position and velocity sensors (4) linearly arranged along a longitudinal direction into first and second position and velocity sensor arrays spaced apart from each other in a lateral direction, in which the position and velocity sensors (4) in the first position and velocity sensor array are in one-to-one correspondence with the position and velocity sensors (4) in the second position and velocity sensor array in the lateral direction; an eddy current sensor (2) disposed in a symmetrical plane between the first position and velocity sensor array and the second position and velocity sensor array and perpendicular to the lateral direction; and a controller connected to the position and velocity sensors (4) and the eddy current sensor (2) respectively for controlling measurement of the thickness of the film according to detection signals from the position and velocity sensors (4) and the eddy current sensor (2).

Abstract: A wafer-transfer device for a chemical-mechanical polishing apparatus includes a base and lifting frame. A first cylinder is connected to a lower portion of the lifting frame to lift it and includes a piston rod passing through the lower portion of the lifting frame and fixed to the base. A basin-shaped contraposition ring is mounted onto an upper portion of the lifting frame via a spring. An inner edge of a top of the contraposition ring defines a curved surface adapted to a contour of a polishing head of the chemical-mechanical polishing apparatus. A wafer support is disposed above the contraposition ring. A second cylinder is mounted onto the contraposition ring and includes a piston rod passing through the contraposition ring and connected to a bottom of the wafer support to lift it. Respective axes of the wafer support, second cylinder, and contraposition ring coincide with one another.

Abstract: A method for measuring a film thickness of a film on an edge of a wafer, comprising: off-line detecting a film at a detection point on the wafer by a four-point probe method to obtain a real film thickness of the film at the detection point, and detecting a distance from the detection point to a center of the wafer using a length measurement, in which the detection point is located between the center of the wafer and a edge point of the wafer; detecting the film at the detection point using an eddy current transducer to obtain a detected film thickness of the film at the detection point; determining a film thickness measuring correction factor according to the real film thickness, the detected film thickness at the detection point and the distance from the detection point to the center of the wafer; and measuring the film on an edge of the wafer using the eddy current transducer to obtain a measured film thickness of the film on the edge of the wafer and correcting the measured film thickness of the film on a

Abstract: A chemical-mechanical polishing machine includes a work table, polishing platen mounted onto the work table, pad conditioner and slurry-delivery device mounted on the work table and disposed near the polishing platen, and polishing-head support mounted on the work table and including a base plate and supporting side plates. The base plate is formed with a groove in a “thickness” direction. A loading and unloading table is mounted on the work table, disposed below the base plate, and opposed to the polishing platen. A polishing head is rotatably disposed on the polishing-head support, movable in the longitudinal direction, and passes through the groove to extend downwardly. A robotic manipulator is disposed near the work table for placing a wafer on the loading and unloading table and taking the wafer away from it. A chemical-mechanical polishing apparatus includes an array of a plurality of the machine.

Abstract: The pad conditioner head for conditioning a polishing pad comprises a bearing seat, a spindle, a protective cover, an annular pressure plate, a self-adaptive platen, a diamond disk and a flexible ring. A flange is mounted on the lower end of the spindle. A press ring is mounted onto a lower surface of the flange. The flexible ring has an upper edge sandwiched between the flange and the press ring and a lower edge sandwiched between the protective cover and the annular pressure plate. The flexible ring, the flange, the annular pressure plate and the self-adaptive platen define a sealed chamber (M). The protective cover, the annular pressure plate, the self-adaptive platen and the diamond disk are rotatable along with the spindle through the flexible ring and movable in an up and down direction relative to the spindle via a deformation of the flexible ring.