Abstract: A method of fabricating light emitting diodes (LED) with a colour purifying diffraction lattice (CPDL) is suggested, the essence of the invention is in the use of the coherent scattering of the light by the CPDL for colour purifying of the light emitted by the LED and enhancement its extraction efficiency, the CPDL is a hexagonal two-dimensional periodical pattern on the surface of the LED structure or an internal interface resulting in the periodical variation in the refractive index with the period d The period of CPDL satisfies the equation d=m.lamda./n, where m is a positive integer number, .lamda. is the wavelength of the light generated by LED, and n is the refraction index of LED structure. The height of the hexagonal islands forming CPDL is h=.lamda.(2l+1)/2n, l is a positive integer number or zero. Use of CPDL allows to convert the laterally propagating light into the vertically propagating and simultaneously filter its spectrum.

Abstract: A flip-chip electrode light-emitting element formed by multilayer coatings where a translucent conducting layer and a highly reflective metal layer acts as flip-chip electrode for enhancing the LED luminous efficiency. The flip-chip electrode light-emitting element includes a translucent substrate, a semiconductor die structure attached on the translucent substrate and made of group III nitride compounds, and an intermediate layer adapted to support the inverted semiconductor die structure on a submount. The flip-chip electrode formed by multiplayer coatings includes a current-spreading transparent conducting layer formed on a top side of the second type semiconductor layer, a highly reflective metal layer formed on a top side of the transparent conducting layer, a metallic diffusion barrier layer formed on a top side of the highly reflective metal layer, and a bonding layer electrically coupled to the intermediate layer and formed on a top side of the barrier layer.

Abstract: A method of fabricating light emitting diodes (LED) with a colour purifying diffraction lattice (CPDL) is suggested, the essence of the invention is in the use of the coherent scattering of the light by the CPDL for colour purifying of the light emitted by the LED and enhancement its extraction efficiency, the CPDL is a hexagonal two-dimensional periodical pattern on the surface of the LED structure or an internal interface resulting in the periodical variation in the refractive index with the period d The period of CPDL satisfies the equation d=m?/n, where m is a positive integer number, ? is the wavelength of the light generated by LED, and n is the refraction index of LED structure. The height of the hexagonal islands forming CPDL is h=?(2l+1)/2n, l is a positive integer number or zero. Use of CPDL allows to convert the laterally propagating light into the vertically propagating and simultaneously filter its spectrum.

Abstract: A method for manufacturing the light emitting diode utilizing the metal substrate and the metal bonding technology is provided. The method includes steps of providing a growing substrate, forming a multi-layered semiconductor structure on the growing substrate, bonding a metal substrate to the multi-layered semiconductor structure, removing the growing substrate, and forming a first electrode and a second electrode on the multi-layered semiconductor structure and the metal substrate respectively.

Abstract: A method for manufacturing the light emitting diode utilizing the transparent substrate and the metal bonding technology is provided. The method includes steps of providing a growing substrate, forming a semiconductor structure on the growing substrate, forming a metal bonding layer on the semiconductor structure, bonding a transparent substrate to the semiconductor structure via the metal bonding layer, removing the growing substrate, and forming a first electrode and a second electrode on the semiconductor structure and the transparent substrate respectively.

Abstract: A full-color light-emitting diode (LED) having a red LED die, a blue LED die, and a green LED die. The red LED die serves as a supporting material on which the blue LED die and the green LED die are separately mounted in such a manner that the red LED die is not completely covered to reserve a red-light emitting surface. In this way, the red, blue, and green LED die forms a double-layer full-color LED to facilitate the packaging operation, to ensure a more compact mixture of red, green, and blue lights and to achieve an exact wave-mixing effect for obtaining a full-color light.

Abstract: A light emitting device includes a substrate, an n-type semiconductor layer and a p-type semiconductor layer formed on the surface of the substrate, an n-electrode formed on the n-type semiconductor layer, an evenly spread ohmic contact layer formed on the p-type semiconductor layer in the form of evenly spread dots, a net, or a honeycomb, and a transparent conducting layer selected from ITO or ZnO and covered on the ohmic contact layer.

Abstract: A blue LED epitaxial wafer grown on an Al2O3 substrate, the blue LED epitaxial wafer having a contact electrode on the bottom side after removal of the Al2O3 substrate, conducting terminals formed on the top side, and a substitute substrate selected from chrome, tungsten, molybdenum, copper, copper chrome alloy, copper molybdenum alloy, copper tungsten alloy, molybdenum tungsten alloy, or their combination alloy and bonded to the top side and connected to the conducting terminals.

Abstract: A method for manufacturing the light emitting diode utilizing the metal substrate and the metal bonding technology is provided. The method includes steps of providing a growing substrate, forming a multi-layered semiconductor structure on the growing substrate, bonding a metal substrate to the multi-layered semiconductor structure, removing the growing substrate, and forming a first electrode and a second electrode on the multi-layered semiconductor structure and the metal substrate respectively.

Abstract: A method for manufacturing the light emitting diode utilizing the transparent substrate and the metal bonding technology is provided. The method includes steps of providing a growing substrate, forming a semiconductor structure on the growing substrate, forming a metal bonding layer on the semiconductor structure, bonding a transparent substrate to the semiconductor structure via the metal bonding layer, removing the growing substrate, and forming a first electrode and a second electrode on the semiconductor structure and the transparent substrate respectively.

Abstract: A semiconductor light emitting diode includes a first conductivity type compound semiconductor substrate, a first conductivity type lower cladding layer, an active layer of undoped AlGaInP or multiple quantum well structure, and a second conductivity type upper cladding structure. The upper cladding structure comprises an (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y P four element compound semiconductor material. The improvement is that the upper cladding structure has a thin and very high resistivity layer inside.