Abstract: The present invention refers to new organic molecules, derived from the class of polycarbocycle derivatives, and their application as components of photoresists, and in particular as components of photoresist compositions where no polymer is comprised as one of the photoresists components. In these photoresist formulations the new molecule(s) is/are the main component(s) (i.e. percentage higher than 50% w/w).

Abstract: Novel photoresist materials, which can be photolithographically processed in biocompatible conditions are presented in this invention. Suitable lithographic scheme for the use of these and analogous resists for biomolecule layer patterning on solid substrates are also described. The processes described enable micropatterning of more than two different proteins on solid substrates without denaturation of the proteins. The preferred resist materials are based on (meth)acrylate copolymers that contain at least one acid cleavable ester group and at least one hydrophilic group such as an alcoholic or a carboxylic group.

Abstract: A process is provided for the effective tuning of the emitting light of OLEDs and thus, achieving single layer, patterned full color displays of optimal quality. The present invention describes a process for the tuning of the emitting color of OLEDs where in the emissive layer of single layer OLEDs suitable emitters in suitable quantities have been dispersed along with a suitable photoacid generator, thus enabling the photochemical transformation of selected areas of the emissive layer in such a way as to change the spectrum of the emitted light at wish.

Abstract: The present invention refers to new organic molecules, derived from the class of polycarbocycle derivatives, and their application as components of photoresists, and in particular as components of photoresist compositions where no polymer is comprised as one of the photoresists components. In these photoresist formulations the new molecule(s) is/are the main component(s) (i.e. percentage higher than 50% w/w).

Abstract: Mixed carbocycle derivatives containing at least two carbocycles per molecule from the group of anthracenes, adamantanes and steroids with functionalized carbon chains are synthesized and used as modifiers of resist properties and especially etch resistance enhancement and absorption characteristics. These derivatives are characterized by formulas I-V, where A and R may be an anthryl- and/or an adamantyl- and/or a steroid moiety. Methods for the preparation of the above compounds are disclosed.

Abstract: Materials are described suitable for optical lithography in the ultraviolet region (including 157 nm and extreme ultraviolet region), and for electron beam lithography. These materials are based on new homopolymers and copolymers, they are characterized by the presence of polyhedral oligomeric silsequioxanes in their molecule, and they are suitable for single as well as bilayer lithography. Ethyl, or similar or smaller size, groups are used as alkyl substituents of the silsequioxanes in order to reduce problems related to pattern transfer, roughness, and high absorbance at 157 nm (such problems occur when the substituents are large alkyl groups such as cyclopentyl groups).

Abstract: Novel photoresist materials, which can be photolithographically processed in biocompatible conditions are presented in this invention. Suitable lithographic scheme for the use of these and analogous resists for biomolecule layer patterning on solid substrates are also described. The processes described enable micropatterning of more than two different proteins on solid substrates without denaturation of the proteins. The preferred resist materials are based on (meth)acrylate copolymers that contain at least one acid cleavable ester group and at least one hydrophilic group such as an alcoholic or a carboxylic group.

Abstract: Mixed carbocycle derivatives containing at least two carbocycles per molecule from the group of anthracenes, adamantanes and steroids with functionalized carbon chains are synthesized and used as modifiers of resist properties and especially etch resistance enhancement and absorption characteristics. These derivatives are characterized by formulas I-V, where A and R may be an anthryl- and/or an adamantyl- and/or a steroid moiety. Methods for the preparation of the above compounds are disclosed.

Abstract: A high resolution pattern transfer processes is described, whereby epoxy containing photoresist films are imagewise exposed to radiation, baked to crosslink the exposed areas, and treated with a silylating medium, which reacts with the epoxy ring thereby incorporating silicon at will in the non-crosslinked regions of the film, while making those regions resistant to oxygen atom-containing plasmas.

Abstract: A method for forming interconnections in microelectronic devices, including interconnections through small vias between different layers in the microelectronic devices include the spin coating of a film comprising a polyoxometalate and an organic material on the substrate. The film is optionally patterned by lithography, the polymer is removed, and the polyoxometalate is reduced to a metal layer. The metal layer may in one embodiment provide a nucleating zone for the deposition of metal.

Abstract: Pattern forming and transferring processes using radiation sensitive materials based upon mixtures of polyoxometalates and organic compounds. The processes involve establishing a layer of such radiation sensitve material on one or more layers of underlying materials. A pattern is formed in the layer of radiation sensitive material by exposing selected areas of the layer to radiation. The pattern may then be transferred into the underlying layers of material. Methods for developing patterns in layers of radiation sensitive materials, so as to hinder leaching of etch resistant substances included in the radiation sensitive materials, are also provided.