Abstract: A method for plating copper conductors on an electronic substrate and devices formed are disclosed. In the method, an electroplating copper bath that is filled with an electroplating solution kept at a temperature between about 0° C. and about 18° C. is first provided. A copper layer on the electronic substrate immersed in the electroplating solution is then plated either in a single step or in a dual-step deposition process. The dual-step deposition process is more suitable for depositing copper conductors in features that have large aspect ratios, such as a via hole in a dual damascene structure having an aspect ratio of diameter/depth of more than ⅓ or as high as {fraction (1/10)}. Various electroplating parameters are utilized to provide a short resistance transient in either the single step deposition or the dual-step deposition process.

Abstract: A method of reducing etching of a seed layer by a plating solution. Prior to introducing the semiconductor wafer with the seed layer into the plating solution, the etching power of the plating solution is diminished.

Abstract: A method for plating copper conductors on an electronic substrate and devices formed are disclosed. In the method, an electroplating copper bath that is filled with an electroplating solution kept at a temperature between about 0° C. and about 18° C. is first provided. A copper layer on the electronic substrate immersed in the electroplating solution is then plated either in a single step or in a dual-step deposition process. The dual-step deposition process is more suitable for depositing copper conductors in features that have large aspect ratios, such as a via hole in a dual damascene structure having an aspect ratio of diameter/depth of more than ⅓ or as high as {fraction (1/10)}. Various electroplating parameters are utilized to provide a short resistance transient in either the single step deposition or the dual-step deposition process.

Abstract: A method of reducing etching of a seed layer by a plating solution. Prior to introducing the semiconductor wafer with the seed layer into the plating solution, the etching power of the plating solution is diminished.

Abstract: An anode assembly including a perforated anode. A perforated anode holder holds the anode. The anode holder includes perforations at least in a bottom wall such that plating solution may flow through perforations in the anode holder and perforations in the anode. An anode isolator separates the anode and a cathode. The anode isolator includes at least one curvilinear surface.

Abstract: Certain alloys of CoFeCu are provided in film and laminate form which have a unique combination of electromagnetic properties which enable them to be used as magnetic thin films in magnetic recording heads, shields and flux guides. The films and laminates thereof are electrodeposited from a plating bath in a DC or pulsed current electrodeposition process.

Abstract: A fixture for supporting a workpiece in a processing cell includes a frame and cooperating workpiece holder. The frame includes a head having a hole therein which receives an integral plateau of the holder. The holder plateau includes an annular seal adjacent a perimeter thereof with a vacuum port disposed therein. The workpiece rests on the seal so that vacuum drawn in the vacuum port fixedly holds the workpiece against the plateau. Assembly of the holder plateau and workpiece thereon through the frame-head hole positions the workpiece coplanar with a front side of the frame. In exemplary embodiments, independent electrical current paths are provided to the workpiece and a surrounding auxiliary electrode.

Abstract: An electroplating cell includes a floor, ceiling, front wall, and back wall forming a box having first and second opposite open ends. A rack for supporting an article to be electroplated is removably positioned vertically to close the first open end and includes a thief laterally surrounding the article to define a cathode. An anode is positioned vertically to close the second open end, with the assembly defining a substantially closed, six-sided inner chamber for receiving an electrolyte therein for electroplating the article. The article and surrounding thief are coextensively aligned with the anode, with the floor, ceiling, front and back walls being effective for guiding electrical current flux between the cathode and the anode. In a preferred embodiment, the cell is disposed as an inner cell inside an outer cell substantially filled with the electrolyte, and a paddle is disposed inside the inner cell for agitating the electrolyte therein.

Abstract: An acidic electrolytic solution for use in the electrodeposition of copper-rich alloys on a substrate, the less noble component being incorporated by underpotential deposition. The solution includes a first salt containing copper cations; a second salt containing cations of a metal less noble than copper; and an acid electrolyte (e.g., methane sulfonic acid) such that at typical current densities the potential is in the range of underpotential deposition of the less noble metal on the copper.Also provided is a process for using the acidic electrolytic solution.

Abstract: A method is described for maintaining constant chemical composition in solutions used for wet chemical processing. All chemical species that are deliberately included in the bath are kept at constant concentration primarily by a method of compensating for their depletion or generation with a set of feed solutions that are formulated and dosed into the bath in accordance with an overall material balance. Further, all chemical species not deliberately included in the bath are kept at constant concentration primarily by keeping the aggregate volume of replenishing stocks in strict proportion to the process service performed by the bath (e.g. the charge passed in an electroplating cell). Finally, a time-based scheme completes the control of the concentration of all bath species by controlling any species (whether deliberately included in the bath or not) that is depleted or generated as the result of chemical reactions which occur independently and/or spontaneously with time.

Abstract: A magnetic thin film structure comprising a first layer of magnetic material having a low anisotropy H.sub.k magnetically coupled to a second layer magnetic material having a high anisotropy H.sub.k and a low coercivity. The laminate provides a dual anisotropy behavior such that the laminate exhibits a high initial permeability at relatively small applied fields during the read operation and a high anisotropy at high applied fields during the write operation. The laminate of the present invention reduces inductive head domain instability produced by the write operation while maintaining high reproducing sensitivity during the read operation. Use of the higher H.sub.k material also reduces the sensitivity of the head performance to variation in process-induced stresses.