Patents by Inventor Panjalak ROKRAKTHONG

Panjalak ROKRAKTHONG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9450171
    Abstract: A thin film piezoelectric element of the present invention includes a substrate and a piezoelectric thin film stack formed on the substrate. The piezoelectric thin film stack includes a top electrode layer, a bottom electrode layer and a piezoelectric layer sandwiched between the top electrode layer and the bottom electrode layer, wherein the piezoelectric layer includes a first piezoelectric layer and a second piezoelectric layer whose compositions have different phase structures. The present invention can obtain high piezoelectric constants, enhanced coercive field strength and good thermal stability, thereby enabling larger applied field strength without depolarization and achieving a large stroke for its applied device.
    Type: Grant
    Filed: March 29, 2013
    Date of Patent: September 20, 2016
    Assignee: SAE Magnetics (H.K.) Ltd.
    Inventors: Wei Xiong, Panjalak Rokrakthong, Kenjiro Hata, Kazushi Nishiyama, Daisuke Iitsuka, Atsushi Iijima
  • Publication number: 20130279044
    Abstract: A thin film piezoelectric element of the present invention includes a substrate and a piezoelectric thin film stack formed on the substrate. The piezoelectric thin film stack includes a top electrode layer, a bottom electrode layer and a piezoelectric layer sandwiched between the top electrode layer and the bottom electrode layer, wherein the piezoelectric layer includes a first piezoelectric layer and a second piezoelectric layer whose compositions have different phase structures. The present invention can obtain high piezoelectric constants, enhanced coercive field strength, thereby enabling larger applied field strength without depolarization and achieving a large stroke for its applied device.
    Type: Application
    Filed: April 19, 2012
    Publication date: October 24, 2013
    Applicant: SAE Magnetics (H.K.) Ltd.
    Inventors: Wei XIONG, Panjalak Rokrakthong, Kenjiro Hata, Kazushi Nishiyama, Daisuke Iitsuka, Atsushi Iijima
  • Publication number: 20130279042
    Abstract: A thin film piezoelectric element of the present invention includes a substrate and a piezoelectric thin film stack formed on the substrate. The piezoelectric thin film stack includes a top electrode layer, a bottom electrode layer and a piezoelectric layer sandwiched between the top electrode layer and the bottom electrode layer, wherein the piezoelectric layer includes a first piezoelectric layer and a second piezoelectric layer whose compositions have different phase structures. The present invention can obtain high piezoelectric constants, enhanced coercive field strength and good thermal stability, thereby enabling larger applied field strength without depolarization and achieving a large stroke for its applied device.
    Type: Application
    Filed: March 29, 2013
    Publication date: October 24, 2013
    Applicant: SAE Magnetics (H.K.) Ltd.
    Inventors: Wei XIONG, Panjalak ROKRAKTHONG, Kenjiro HATA, Kazushi NISHIYAMA, Daisuke IITSUKA, Atsushi IIJIMA