Abstract: Systems and methods for enabling Bidirectional Forwarding Detection (BFD) over a selected reverse path are provided. A process, according to one implementation, include sending an echo request in a forward direction from an initiator node to a reflector node. For example, the initiator node and reflector node may be configured to operate in a network having no or different centralized controller that manages both the initiator node and reflector node. The echo request may be sent to the reflector node to discover a reverse path in a reverse direction from the reflector node to the initiator node. Also, the reverse path is discovered for the purpose of initiating a Bidirectional Forwarding Detection (BFD) or Multi-Protocol Label Switching (MPLS) Ping procedure.

Abstract: Systems and methods for monitoring the continuity between endpoints in a network are provided. A process, according to one implementation, includes entering a first list of one or more Segment Identifiers (SIDs) into a Bidirectional Forwarding Detection (BFD) request packet, the first list of one or more SIDs defining a Segment-Routing Traffic-Engineering (SR-TE) forward path from a source node to a destination node. The process also includes entering a second list of one or more SIDs into the BFD request packet, the second list of one or more SIDs defining an SR-TE reverse path back from the destination node that eliminates involvement of a BFD reflector of the destination node. Also, the process includes entering a revised-BFD request into the BFD request packet, the revised-BFD request having a Your Discriminator field set to a discriminator value associated with the source node.

Abstract: Apparatus for communicating information across a solid wall has one or two outside ultrasonic transducers coupled to an outside surface of the wall and connected to a carrier generator for sending an ultrasonic carrier signal into the wall and for receiving an output information signal from the wall. One or two inside ultrasonic transducers are coupled to an inside surface of the wall and one of them introduces the output information signal into the wall. When there are two inside transducers inside the wall, one receives the carrier signal and the second transmits the carrier after it is modulated by the output information from the sensor. When there is one inside transducer, the output information from the sensor is transmitted by changing the reflected or returned signal from the inside transducer. A power harvesting circuit inside the wall harvests power from the carrier signal and uses it to power the sensor.

Abstract: A method of converting an analog signal to a digital signal includes (a) filtering the analog signal to the range 0≦fx≦fB; (b) sampling the filtered signal at a rate fS>>fN, where fS is the sampling frequency, fN=2fx is the Nyquist frequency of the sampled signal, and fB≦fS/2 is the constrained signal bandwidth; (c) converting the sampled signal to an optical sampled signal: (d) converting the optical sampled signal from a temporal signal to a spatial signal; (e) illuminating a smart pixel array with the spatial signal; (f) processing the spatial signal with an error diffusion neural network to produce a 2-D binary image; and (g) averaging rows and columns of the 2-D binary image using a digital low pass filter and a decimation circuit.

Abstract: A contactless non-destructive technique for measuring at least one surface property of a first semiconductor material surface utilizes an electrically conductive interdigital transducer and a metal plate defined on a piezoelectric material. The metal plate has a window therein and the semiconductor material is positioned with its first surface over the window and facing the exposed piezoelectric material of the window. A radio frequency pulse is applied to the interdigital transducer to generate a surface acoustic wave on the piezoelectric material. This produces a transverse electric field which extends above the surface of the piezoelectric material and propagates across the window. This field acts as a probing field in the semiconductor material at the surface facing the piezoelectric material, and due to acousto-electric interaction a transverse acousto-electric voltage is produced.