Abstract: A memory apparatus and method of operation are provided. The apparatus includes memory cells disposed in memory holes connected to bit lines. The memory cells retain a threshold voltage corresponding to data states. A control means applies a bit line voltage to the bit lines while determining whether the memory cells have the threshold voltage above one or more read levels associated with each of the data states in a first portion of a read operation. The control means groups the memory cells targeted for ones of the data states into data state groups based on the first portion of the read operation. The control means also supplies a near zero voltage to the bit lines coupled to the memory cells targeted for ones of the data states associated with at least one of the data state groups while reading the memory cells in subsequent portions of the read operation.

Abstract: A memory device includes a memory block with memory cells that are arranged in word lines. Control circuitry in the memory device selects a word line to program; sets a programming pulse voltage to a starting value; and determines an operating temperature and compares the operating temperature to a first threshold temperature. In response to the operating temperature being less than the first threshold temperature, the control circuitry sets a program voltage step size to a baseline. In response to the operating temperature being greater than a first threshold temperature, the control circuitry sets the program voltage step size to a high temperature step size that is less than the baseline step size. The control circuitry programs the selected word line. Each program loop includes a programming pulse, and the control circuitry increases a magnitude of the programming pulse between program loops by the program voltage step size.

Abstract: A memory apparatus and method of operation are provided. The apparatus includes memory cells disposed in memory holes connected to bit lines. The memory cells retain a threshold voltage corresponding to data states. A control means applies a bit line voltage to the bit lines while determining whether the memory cells have the threshold voltage above one or more read levels associated with each of the data states in a first portion of a read operation. The control means groups the memory cells targeted for ones of the data states into data state groups based on the first portion of the read operation. The control means also supplies a near zero voltage to the bit lines coupled to the memory cells targeted for ones of the data states associated with at least one of the data state groups while reading the memory cells in subsequent portions of the read operation.

Abstract: A memory device includes a memory block with memory cells that are arranged in word lines. Control circuitry in the memory device selects a word line to program; sets a programming pulse voltage to a starting value; and determines an operating temperature and compares the operating temperature to a first threshold temperature. In response to the operating temperature being less than the first threshold temperature, the control circuitry sets a program voltage step size to a baseline. In response to the operating temperature being greater than a first threshold temperature, the control circuitry sets the program voltage step size to a high temperature step size that is less than the baseline step size. The control circuitry programs the selected word line. Each program loop includes a programming pulse, and the control circuitry increases a magnitude of the programming pulse between program loops by the program voltage step size.