Abstract: The present disclosure describes micromechanical resonator, a resonator element for the resonator, and a method for trimming the resonator. The resonator comprises a resonator element having a length, a width, and a thickness, where the length and the width define a plane of the resonator element. The resonator element comprises at least two regions (52, 53) in the plane of the resonator element, wherein the at least two regions have different thicknesses.

Abstract: The present disclosure describes a micromechanical resonator comprising a resonator element (40) having a length (l1) and a width (w1) that is perpendicular to the length. The resonator element has a length-to-width aspect ratio in a range of 1.8 to 2.2. The resonator element is suspended to a support structure with two or more anchors (41, 43). Each of the two or more anchors is attached to a first location or a second location. The first location is at a shorter side (42) of the resonator element. The first location divides the width (w1) of the resonator element into a larger portion (w3) and a smaller portion (w2) such that a ratio between said smaller portion (w2) and the whole width (w1) is in a range of 0.10 to 0.28. The second location is at a longer side (44). The second location divides the length (l1) of the resonator element into a larger portion (l3) and a smaller portion (l2) such that a ratio between said smaller portion (l2) and the whole length (l1) is in a range of 0.36 to 0.48.

Abstract: The present disclosure describes a micromechanical resonator comprising a resonator element (40) having a length (l1) and a width (w1) that is perpendicular to the length. The resonator element has a length-to-width aspect ratio in a range of 1.8 to 2.2. The resonator element is suspended to a support structure with two or more anchors (41, 43). Each of the two or more anchors is attached to a first location or a second location. The first location is at a shorter side (42) of the resonator element. The first location divides the width (w1) of the resonator element into a larger portion (w3) and a smaller portion (w2) such that a ratio between said smaller portion (w2) and the whole width (w1) is in a range of 0.10 to 0.28. The second location is at a longer side (44). The second location divides the length (l1) of the resonator element into a larger portion (l3) and a smaller portion (l2) such that a ratio between said smaller portion (l2) and the whole length (l1) is in a range of 0.36 to 0.48.

Abstract: The present disclosure describes micromechanical resonator, a resonator element for the resonator, and a method for trimming the resonator. The resonator comprises a resonator element having a length, a width, and a thickness, where the length and the width define a plane of the resonator element. The resonator element comprises at least two regions (52, 53) in the plane of the resonator element, wherein the at least two regions have different thicknesses.

Abstract: The invention provides a micromechanical device comprising a support structure and a deflecting element connected to the support structure, wherein the deflecting element comprises at least one deformable member adapted to deform extensionally, flexurally or torsionally with respect to a deformation axis for allowing deflection of the deflecting element with respect to the support structure. Further, there are means for statically deflecting the deflecting element or detecting the magnitude of static deflection of the deflecting element. According to the invention, the deformable member is made of silicon doped with an n-type doping agent to a doping concentration of at least 1.1*1020 cm?3. The invention allows for manufacturing micromechanical devices whose mechanical operation is not affected by prevailing temperature conditions.

Abstract: The invention provides a microelectromechanical resonator device comprising a support structure and a resonator manufactured on a (100) or (110) semiconductor wafer, wherein the resonator is suspended to the support structure and comprises at least one beam being doped to a doping concentration of 1.1*1020 cm?3 or more with an n-type doping agent and is being capable of resonating in a length-extensional, flexural resonance or torsional mode upon suitable actuation. In particular, the doping concentration and angle of the beam are chosen so as to simultaneously produce zero or close to zero second order TCF, and even more preferably zero or close to zero first and second order TCFs, for the resonator in said resonance mode, thus providing a temperature stable resonator.

Abstract: The invention concerns microelectromechanical resonators. In particular, the invention provides a resonator comprising a support structure, a doped semiconductor resonator suspended to the support structure by at least one anchor, and actuator for exciting resonance into the resonator. According to the invention, the resonator comprises a base portion and at least one protrusion extending outward from the base portion and is excitable by said actuator into a compound resonance mode having temperature coefficient of frequency (TCF) characteristics, which are contributed by both the base portion and the at least one protrusion. The invention enables simple resonators, which are very well temperature compensated over a wide temperature range.

Abstract: The invention relates to a microelectromechanical resonator device comprising a support structure and a semiconductor resonator plate doped to a doping concentration with an n-type doping agent and being capable of resonating in a width-extensional resonance mode. In addition, there is at least one anchor suspending the resonator plate to the support structure and an actuator for exciting the width-extensional resonance mode into the resonator plate. According to the invention, the resonator plate is doped to a doping concentration of 1.2*1020 cm?3 or more and has a shape which, in combination with said doping concentration and in said width-extensional resonance mode, provides the second order temperature coefficient of frequency (TCF2) to be 12 ppb/C2 or less at least at one temperature. Several practical implementations are presented.

Abstract: The invention concerns microelectromechanical resonators. In particular, the invention provides a resonator comprising a support structure, a doped semiconductor resonator suspended to the support structure by at least one anchor, and actuator for exciting resonance into the resonator. According to the invention, the resonator comprises a base portion and at least one protrusion extending outward from the base portion and is excitable by said actuator into a compound resonance mode having temperature coefficient of frequency (TCF) characteristics, which are contributed by both the base portion and the at least one protrusion. The invention enables simple resonators, which are very well temperature compensated over a wide temperature range.

Abstract: The invention provides a microelectromechanical resonator device comprising a support structure and a resonator manufactured on a (100) or (110) semiconductor wafer, wherein the resonator is suspended to the support structure and comprises at least one beam being doped to a doping concentration of 1.1*1020 cm?3 or more with an n-type doping agent and is being capable of resonating in a length-extensional, flexural resonance or torsional mode upon suitable actuation. In particular, the doping concentration and angle of the beam are chosen so as to simultaneously produce zero or close to zero second order TCF, and even more preferably zero or close to zero first and second order TCFs, for the resonator in said resonance mode, thus providing a temperature stable resonator.

Abstract: The invention relates to a microelectromechanical resonator device comprising a support structure and a semiconductor resonator plate doped to a doping concentration with an n-type doping agent and being capable of resonating in a width-extensional resonance mode. In addition, there is at least one anchor suspending the resonator plate to the support structure and an actuator for exciting the width-extensional resonance mode into the resonator plate. According to the invention, the resonator plate is doped to a doping concentration of 1.2*1020 cm?3 or more and has a shape which, in combination with said doping concentration and in said width-extensional resonance mode, provides the second order temperature coefficient of frequency (TCF2) to be 12 ppb/C2 or less at least at one temperature. Several practical implementations are presented.