Abstract: Semiconductor devices and corresponding methods of manufacture are disclosed. The method includes forming a first device structure on a first substrate, a first laser liftoff layer on the first device structure, a protective layer on the first laser liftoff layer, and a second substrate on the protective layer. The method includes de-attaching, through applying radiation on the first laser liftoff layer, the protective layer from the first laser liftoff layer, with a first surface of the second substrate remaining in contact with a second surface of the protective layer. The protective layer is transparent to the radiation.

Abstract: A method of processing a substrate that includes: forming an infrared (IR) absorbing separation layer over a first substrate; forming one or more layers over the IR absorbing separation layer; bonding the first substrate and a second substrate at a bonding interface between the one or more layers and the second substrate using a direct bonding technique to form a wafer stack; exposing the wafer stack to an infrared (IR) light irradiation to separate the first substrate from the one or more layers.

Abstract: In some implementations, a method may include providing a silicon on insulator (SOI) substrate having a first semiconductor layer, a buried oxide layer over the first semiconductor region, and a second semiconductor region over the buried oxide, the second semiconductor region having a plurality of recesses exposing the underlying buried oxide, each recess having a shape and size configured to accommodate a die. In addition, the device may include bonding a plurality of semiconductor dies to the buried oxide through the plurality of recesses.