Patents by Inventor Panyin Hughes

Panyin Hughes has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and apparatus for providing uniform plasma in a magnetic field enhanced plasma reactor
    Patent number: 7374636
    Abstract: A method and apparatus for controlling a magnetic field gradient within a magnetically enhanced plasma reactor. The apparatus comprises a cathode pedestal supporting a wafer within an enclosure, a plurality of electromagnets positioned proximate the enclosure for producing a magnetic field in the enclosure and a magnetic field control element, positioned proximate the electromagnets, for controlling the magnetic field proximate a specific region of the wafer.
    Type: Grant
    Filed: July 26, 2002
    Date of Patent: May 20, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Keiji Horioka, Chun Yan, Taeho Shin, Roger Alan Lindley, Panyin Hughes, Douglas H. Burns, Evans Y. Lee, Bryan Y. Pu, Qi Li, Mahmoud Dahimene
  • Method and apparatus for controlling the magnetic field intensity in a plasma enhanced semiconductor wafer processing chamber
    Patent number: 7316199
    Abstract: A magnetic field generator for producing a magnetic field that accelerates plasma formation is placed proximate a reaction chamber of semiconductor substrate processing system. The magnetic field generator has four main magnetic coil sections for producing a magnetic field nearly parallel to the top surface of a support pedestal in the reaction chamber and four sub-magnetic coil sections placed generally coaxially with the main magnetic coil sections to produce a magnetic field of the direction opposite of that of the magnetic field produced with the main magnetic coil sections. In the magnetic field generator, magnetic fields of opposite polarities are superimposed on each other when electric currents of opposite directions are applied to the main and sub-magnetic coil sections.
    Type: Grant
    Filed: May 14, 2002
    Date of Patent: January 8, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Keiji Horioka, Chun Yan, Taeho Shin, Roger Alan Lindley, Qi Li, Panyin Hughes, Douglas H. Burns, Evans Y. Lee, Bryan Y. Pu
  • Method and apparatus for controlling the magnetic field intensity in a plasma enhanced semiconductor wafer processing chamber
    Publication number: 20030085000
    Abstract: A magnetic field generator for producing a magnetic field that accelerates plasma formation is placed proximate a reaction chamber of semiconductor substrate processing system. The magnetic field generator has four main magnetic coil sections for producing a magnetic field nearly parallel to the top surface of a support pedestal in the reaction chamber and four sub-magnetic coil sections placed generally coaxially with the main magnetic coil sections to produce a magnetic field of the direction opposite of that of the magnetic field produced with the main magnetic coil sections. In the magnetic field generator, magnetic fields of opposite polarities are superimposed on each other when electric currents of opposite directions are applied to the main and sub-magnetic coil sections.
    Type: Application
    Filed: May 14, 2002
    Publication date: May 8, 2003
    Applicant: Applied Materials, Inc.
    Inventors: Keiji Horioka, Chun Yan, Taeho Shin, Roger Alan Lindley, Qi Li, Panyin Hughes, Douglas H. Burns, Evans Y. Lee, Bryan Y. Pu
  • Method and apparatus for providing uniform plasma in a magnetic field enhanced plasma reactor
    Publication number: 20030006008
    Abstract: A method and apparatus for controlling a magnetic field gradient within a magnetically enhanced plasma reactor. The apparatus comprises a cathode pedestal supporting a wafer within an enclosure, a plurality of electromagnets positioned proximate the enclosure for producing a magnetic field in the enclosure and a magnetic field control element, positioned proximate the electromagnets, for controlling the magnetic field proximate a specific region of the wafer.
    Type: Application
    Filed: July 26, 2002
    Publication date: January 9, 2003
    Applicant: Applied Materials, Inc.
    Inventors: Keiji Horioka, Chun Yan, Taeho Shin, Roger Alan Lindley, Panyin Hughes, Douglas H. Burns, Evans Y. Lee, Bryan Y. Pu, Qi Li, Mahmoud Dahimene