Abstract: The invention is directed to a semiconductor structure located on a substrate in a scribe line region of a wafer. The semiconductor structure comprises a first dielectric layer, a first test pad and a passivation layer. The first dielectric layer is disposed on the substrate and the first test pad is disposed on the first dielectric layer. The passivation layer is disposed on the first dielectric layer and surrounding the first test pad and a groove is located between the first test pad and the passivation layer and the groove is at lest located between the boundary of the scribe line region and the first test pad.