Patents by Inventor Pao-Chuan Shih

Pao-Chuan Shih has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220123110
    Abstract: The current disclosure describes a new vertical tunnel field-effect transistor (TFET). The TFET includes a source layer over a substrate. A first channel layer is formed over the source layer. A drain layer is stacked over the first channel layer with a second channel layer stacked therebetween. The drain layer and the second channel layer overlap a first surface portion of the first channel layer. A gate structure is positioned over the channel layer by a second surface portion of the channel layer and contacts a sidewall of the second channel layer.
    Type: Application
    Filed: December 29, 2021
    Publication date: April 21, 2022
    Inventors: Jiun-Yun Li, Pao-chuan Shih, Wei-Chih Hou
  • Patent number: 11245011
    Abstract: The current disclosure describes a new vertical tunnel field-effect transistor (TFET). The TFET includes a source layer over a substrate. A first channel layer is formed over the source layer. A drain layer is stacked over the first channel layer with a second channel layer stacked therebetween. The drain layer and the second channel layer overlap a first surface portion of the first channel layer. A gate structure is positioned over the channel layer by a second surface portion of the channel layer and contacts a sidewall of the second channel layer.
    Type: Grant
    Filed: September 25, 2018
    Date of Patent: February 8, 2022
    Assignees: Taiwan Semiconductor Manufacturing Co., Ltd., National Taiwan University
    Inventors: Jiun-Yun Li, Pao-Chuan Shih, Wei-Chih Hou
  • Publication number: 20200098867
    Abstract: The current disclosure describes a new vertical tunnel field-effect transistor (TFET). The TFET includes a source layer over a substrate. A first channel layer is formed over the source layer. A drain layer is stacked over the first channel layer with a second channel layer stacked therebetween. The drain layer and the second channel layer overlap a first surface portion of the first channel layer. A gate structure is positioned over the channel layer by a second surface portion of the channel layer and contacts a sidewall of the second channel layer.
    Type: Application
    Filed: September 25, 2018
    Publication date: March 26, 2020
    Inventors: Jiun-Yun Li, Pao-Chuan Shih, Wei-Chih Hou
  • Publication number: 20060282987
    Abstract: A door-handle warning lamp for an automobile includes a door handle having its front side bored with a recessed chamber. A circuit board is installed in the recessed chamber and provided thereon with a plurality of LED lamps. A leak-preventing gasket is fitted in the recessed chamber and a transparent cover is covered on the recessed chamber of the door handle. Thus, when the automobile is to turn leftward or rightward and the left side or the right-side directional lamp is turned on, the warning lamp on the door handle will be lit up at the same time for warning. In addition, when the car door is opened, the door handle warning lamp will also be lit up to warn other cars and pedestrians passing by the left or the right side of the automobile.
    Type: Application
    Filed: October 31, 2005
    Publication date: December 21, 2006
    Inventors: Pao-Tung Shih, Pao-Chuan Shih, Po-Ming Lin