Abstract: An apparatus configured to detect a substance, and method of operating and forming the same. In one embodiment, the apparatus includes a tunable resonator including an upper Bragg reflector and a lower Bragg reflector separated by a porous matrix. The tunable resonator is configured to be illuminated by a light source and produce a first spectral optical response from a substance absorbed within the porous matrix. The apparatus also includes a detector positioned proximate the tunable resonator configured to provide a first absorption signal representing the first spectral optical response.

Abstract: An apparatus configured to detect a substance, and method of operating and forming the same. In one embodiment, the apparatus includes a tunable resonator including a first Bragg reflector with a first optical stop band separated by a cavity from a second Bragg reflector with a second optical stop band. The first optical stop band is offset in wavelength from the second optical stop band. The tunable resonator is configured to be illuminated by a light source and produce a first spectral optical response from a substance within the cavity. The apparatus also includes a detector positioned proximate the tunable resonator configured to provide a first photonic absorption signal representing the first spectral optical response.

Abstract: An apparatus for detecting an analyte, and method of operating and forming the same. In one embodiment, the apparatus includes a pedestal formed on a semiconductor substrate and a mid-infrared (“IR”) transparent semiconductor waveguide formed on the pedestal. A refractive index of the pedestal is less than the mid-IR transparent semiconductor waveguide. The apparatus also includes a detector configured to detect an analyte couplable to the mid-IR transparent semiconductor waveguide.

Abstract: An apparatus configured to detect a substance, and method of operating and forming the same. In one embodiment, the apparatus includes a tunable resonator including an upper Bragg reflector and a lower Bragg reflector separated by a porous matrix. The tunable resonator is configured to be illuminated by a light source and produce a first spectral optical response from a substance absorbed within the porous matrix. The apparatus also includes a detector positioned proximate the tunable resonator configured to provide a first absorption signal representing the first spectral optical response.

Abstract: Apparatus and methods for second harmonic generation with a waveguide. In one embodiment, a method includes the steps of providing a waveguide, wherein the waveguide has a substrate, and a polydomain epitaxial thin film on the substrate, wherein the polydomain epitaxial thin film defines a plane and has a first surface and a second, opposite surface defining a body portion of the polydomain epitaxial thin film therebetween with a film thickness, l, and wherein the polydomain epitaxial thin film has a coherence length, lc, and exposing the waveguide to an incident photon beam with a wavelength and a focal point such that the incident photon beam is incident to the plane of the polydomain epitaxial thin film with an angle ? that is formed between the incident beam and the plane of the polydomain epitaxial thin film and satisfies the condition of 0<?<90, wherein the polydomain epitaxial thin film is formed with the following condition satisfied: l<lc.

Abstract: Apparatus and methods for second harmonic generation with a waveguide. In one embodiment, a method includes the steps of providing a waveguide, wherein the waveguide has a substrate, and a polydomain epitaxial thin film on the substrate, wherein the polydomain epitaxial thin film defines a plane and has a first surface and a second, opposite surface defining a body portion of the polydomain epitaxial thin film therebetween with a film thickness, l, and wherein the polydomain epitaxial thin film has a coherence length, lc, and exposing the waveguide to an incident photon beam with a wavelength and a focal point such that the incident photon beam is incident to the plane of the polydomain epitaxial thin film with an angle ? that is formed between the incident beam and the plane of the polydomain epitaxial thin film and satisfies the condition of 0<?<90, wherein the polydomain epitaxial thin film is formed with the following condition satisfied: l<lc.