Abstract: Consistent with an example embodiment, there is a semiconductor device having a front-side surface, back-side surface, and vertical surfaces. The semiconductor device comprises an active device die having electrical contacts on the front-side surface. A metal shield is plated on the back-side surface and the vertical surfaces of the active device die. Conductive links connect the plated metal shield to selected electrical contacts on the front-side surface.

Abstract: Film-on-wire (FOW) based IC devices and FOW based methods for IC packaging are described. In an embodiment, a method for packaging an IC dies involves applying a film layer to IC dies and bond wires that are attached to a substrate or a leadframe to form a film-on-wire layer, where the IC dies and the bond wires are enclosed by the film-on-wire layer, and cutting the substrate or the leadframe into IC devices. Other embodiments are also described. The FOW based method for IC packaging can eliminate the need for molding in the IC packaging process and consequently, can reduce the cost of IC packaging and the dimensions of packaged IC devices.

Abstract: PCB or similar material is used for stiffener rings supporting heat sinks in Flip Chip Ball Grid Array (FCBGA) packages. The substrate material of the package and the stiffener ring share the same or similar Coefficient of Thermal Expansion. Stiffener rings may be manufactured from PCB or similar material using a router.