Abstract: Some embodiments relate to a memory device. The memory device includes a substrate comprising an inter-metal dielectric layer having a metal line, a dielectric layer over the substrate, a bottom electrode via through the dielectric layer and in contact with the metal line, a bottom electrode over the bottom electrode via, a magnetic tunneling junction (MTJ) element over the bottom electrode, and a top electrode over the MTJ element. A center portion of the bottom electrode directly above the bottom electrode via is thicker than an edge portion of the bottom electrode.