Abstract: A method for manufacturing an electronic device based on SiC includes forming a structural layer of SiC on a front side of a substrate. The substrate has a back side that is opposite to the front side along a direction. Active regions of the electronic device are formed in the structure layer, and the active regions are configured to generate or conduct electric current during the use of the electronic device. A first electric terminal is formed on the structure layer, and an intermediate layer is formed at the back side of the substrate. The intermediate layer is heated by a LASER beam in order to generate local heating such as to favor the formation of an ohmic contact of Titanium compounds. A second electric terminal of the electronic device is formed on the intermediate layer.

Abstract: A method for manufacturing a SiC-based electronic device, that includes implanting, at a front side of a solid body of SiC having a conductivity of N type, dopant species of P type, thus forming an implanted region that extends in depth in the solid body starting from the front side and has a top surface co-planar with said front side; and generating a laser beam directed towards the implanted region in order to generate heating of the implanted region at temperatures comprised between 1500° C. and 2600° C. so as to form an ohmic contact region including one or more carbon-rich layers, for example graphene and/or graphite layers, in the implanted region and, simultaneously, activation of the dopant species of P type.

Abstract: A method for manufacturing an electronic device based on SiC includes forming a structural layer of SiC on a front side of a substrate. The substrate has a back side that is opposite to the front side along a direction. Active regions of the electronic device are formed in the structure layer, and the active regions are configured to generate or conduct electric current during the use of the electronic device. A first electric terminal is formed on the structure layer, and an intermediate layer is formed at the back side of the substrate. The intermediate layer is heated by a LASER beam in order to generate local heating such as to favor the formation of an ohmic contact of Titanium compounds. A second electric terminal of the electronic device is formed on the intermediate layer.

Abstract: Process for manufacturing a 3C-SiC layer, comprising the steps of: providing a wafer of 4H-SiC, provided with a surface; heating, through a LASER beam, a selective portion of the wafer at least up to a melting temperature of the material of the selective portion; allowing the cooling and crystallization of the melted selective portion, thus forming the 3C-SiC layer, a Silicon layer on the 3C-SiC layer and a carbon-rich layer above the Silicon layer; completely removing the carbon-rich layer and the Silicon layer, exposing the 3C-SiC layer. If the Silicon layer is maintained on the 4H-SiC wafer, the process leads to the formation of a Silicon layer on the 4H-SiC wafer. The 3C-SiC or Silicon layer thus formed may be used for the integration, even only partial, of electrical or electronic components.

Abstract: A device for detecting UV radiation, comprising: a SiC substrate having an N doping; a SiC drift layer having an N doping, which extends over the substrate; a cathode terminal; and an anode terminal. The anode terminal comprises: a doped anode region having a P doping, which extends in the drift layer; and an ohmic-contact region including one or more carbon-rich layers, in particular graphene and/or graphite layers, which extends in the doped anode region. The ohmic-contact region is transparent to the UV radiation to be detected.

Abstract: An HEMT device of a normally-on type, comprising a heterostructure; a dielectric layer extending over the heterostructure; and a gate electrode extending right through the dielectric layer. The gate electrode is a stack, which includes: a protection layer, which is made of a metal nitride with stuffed grain boundaries and extends over the heterostructure, and a first metal layer, which extends over the protection layer and is completely separated from the heterostructure by said protection layer.

Abstract: A process for manufacturing a HEMT device includes forming a conductive region on a work body having a semiconductive heterostructure. To obtain the conductive region, a first reaction region having carbon is formed on the heterostructure and a metal stack is formed having a second reaction region in contact with the first reaction region. The work body is annealed, so that the first reaction region reacts with the second reaction region, thus forming an interface portion of the conductive region. The interface portion is of a compound having carbon and is in ohmic contact with the semiconductive hetero structure.

Abstract: A method for manufacturing a SiC-based electronic device, that includes implanting, at a front side of a solid body of SiC having a conductivity of N type, dopant species of P type, thus forming an implanted region that extends in depth in the solid body starting from the front side and has a top surface co-planar with said front side; and generating a laser beam directed towards the implanted region in order to generate heating of the implanted region at temperatures comprised between 1500° C. and 2600° C. so as to form an ohmic contact region including one or more carbon-rich layers, for example graphene and/or graphite layers, in the implanted region and, simultaneously, activation of the dopant species of P type.

Abstract: A process for manufacturing a silicon carbide device from a body of silicon carbide having a back surface, wherein a first layer of a first metal is formed on the back surface of the body; a second layer of a second metal, different from the first metal, is formed on the first layer to form a multilayer, the first or the second metal being nickel or a nickel alloy and forming a nickel-based layer, another of the first or the second metal being a metal X, capable to form stable compounds with carbon and forming an X-based layer; and the multilayer is annealed to form a mixed layer including nickel silicide and at least one of X carbide or a metal X-carbon ternary compound.

Abstract: For the manufacturing of a vertical conduction silicon carbide electronic device, a work wafer, which has a silicon carbide substrate having a work face, is processed. A rough face is formed from the work face of the silicon carbide substrate. The rough face has a roughness higher than a threshold. A metal layer is deposited on the rough face and the metal layer is annealed, thereby causing the metal layer to react with the silicon carbide substrate, forming a silicide layer having a plurality of protrusions of silicide.

Abstract: A device for detecting UV radiation, comprising: a SiC substrate having an N doping; a SiC drift layer having an N doping, which extends over the substrate; a cathode terminal; and an anode terminal. The anode terminal comprises: a doped anode region having a P doping, which extends in the drift layer; and an ohmic-contact region including one or more carbon-rich layers, in particular graphene and/or graphite layers, which extends in the doped anode region. The ohmic-contact region is transparent to the UV radiation to be detected.

Abstract: A metal layer is deposited on a wafer that has silicon carbide, wherein the metal layer forms a contact face. A laser annealing is performed at the contact face using a laser beam application that causes the metal layer to react with the wafer and form a silicide layer. The laser beam has a footprint having a size. To laser anneal the contact face, a first portion of the contact face is irradiated, the footprint of the laser beam is moved by a step smaller than the size of the footprint, and a second portion of the contact face is irradiated, thereby causing the first portion and the second portion of the contact face to overlap.

Abstract: A device for detecting UV radiation, comprising: a SiC substrate having an N doping; a SiC drift layer having an N doping, which extends over the substrate; a cathode terminal; and an anode terminal. The anode terminal comprises: a doped anode region having a P doping, which extends in the drift layer; and an ohmic-contact region including one or more carbon-rich layers, in particular graphene and/or graphite layers, which extends in the doped anode region. The ohmic-contact region is transparent to the UV radiation to be detected.

Abstract: A method for manufacturing a SiC-based electronic device, that includes implanting, at a front side of a solid body of SiC having a conductivity of N type, dopant species of P type, thus forming an implanted region that extends in depth in the solid body starting from the front side and has a top surface co-planar with said front side; and generating a laser beam directed towards the implanted region in order to generate heating of the implanted region at temperatures comprised between 1500° C. and 2600° C. so as to form an ohmic contact region including one or more carbon-rich layers, for example graphene and/or graphite layers, in the implanted region and, simultaneously, activation of the dopant species of P type.

Abstract: An HEMT device of a normally-on type, comprising a heterostructure; a dielectric layer extending over the heterostructure; and a gate electrode extending right through the dielectric layer. The gate electrode is a stack, which includes: a protection layer, which is made of a metal nitride with stuffed grain boundaries and extends over the heterostructure, and a first metal layer, which extends over the protection layer and is completely separated from the heterostructure by said protection layer.

Abstract: A method for manufacturing an electronic device based on SiC includes forming a structural layer of SiC on a front side of a substrate. The substrate has a back side that is opposite to the front side along a direction. Active regions of the electronic device are formed in the structure layer, and the active regions are configured to generate or conduct electric current during the use of the electronic device. A first electric terminal is formed on the structure layer, and an intermediate layer is formed at the back side of the substrate. The intermediate layer is heated by a LASER beam in order to generate local heating such as to favor the formation of an ohmic contact of Titanium compounds. A second electric terminal of the electronic device is formed on the intermediate layer.

Abstract: An HEMT device of a normally-on type, comprising a heterostructure; a dielectric layer extending over the heterostructure; and a gate electrode extending right through the dielectric layer. The gate electrode is a stack, which includes: a protection layer, which is made of a metal nitride with stuffed grain boundaries and extends over the heterostructure, and a first metal layer, which extends over the protection layer and is completely separated from the heterostructure by said protection layer.

Abstract: An embodiment of an integrated device, including a chip of semiconductor material wherein an integrated circuit is integrated, is proposed; the integrated device includes a set of contact terminals for contacting the integrated circuit. At least one contact terminal of said set of contact terminals includes a contact layer of metal material being suitable to be directly coupled mechanically to an element external to the chip, and a coupling element for improving an electrical and/or mechanical coupling between the contact layer and the chip. The coupling element includes a coupling layer being formed by a combination between the metal material of the contact layer and the semiconductor material of the chip, with the coupling layer that is directly coupled to the chip and to the contact layer.

Abstract: An HEMT device of a normally-on type, comprising a heterostructure; a dielectric layer extending over the heterostructure; and a gate electrode extending right through the dielectric layer. The gate electrode is a stack, which includes: a protection layer, which is made of a metal nitride with stuffed grain boundaries and extends over the heterostructure, and a first metal layer, which extends over the protection layer and is completely separated from the heterostructure by said protection layer.

Abstract: An integrated electronic device for detecting the composition of ultraviolet radiation includes a cathode region formed by a semiconductor material with a first type of conductivity. A first anode region and a second anode region are laterally staggered with respect to one another and are set in contact with the cathode region. The cathode region and the first anode region form a first sensor. The cathode region and the second anode region form a second sensor. In a spectral range formed by the UVA band and by the UVB band, the first and second sensors have, respectively, a first spectral responsivity and a second spectral responsivity different from one another.