Abstract: In one aspect, a method includes manufacturing a tunneling magnetoresistance (TMR) element to sense out-of-plane changes in magnetic field intensity in a magnetic field. The manufacturing includes depositing a plurality of antiferromagnetic layers having magnetization directions alternating by layer between a first direction and a second direction opposite the first direction. A top layer of the plurality of antiferromagnetic layers has a magnetization direction in the first direction. The manufacturing also includes depositing a ferromagnetic layer directly on the top layer; depositing a first multilayer structure directly on the ferromagnetic layer; depositing a metal layer directly on the first multilayer structure; and depositing a second multilayer structure directly on the metal layer. The ferromagnetic layer, the first multilayer structure, and the second multilayer structure are each parallel to an x-y plane and the first direction is either in a z-direction or in a ?z direction.

Abstract: In one aspect, a method includes manufacturing a magnetic-field angle sensor on a wafer. The manufacturing includes forming a cosine bridge that includes forming a first magnetoresistance (MR) element. The manufacturing also includes forming a sine bridge that includes forming a second MR element. Forming the first MR element includes using a process to reduce orthogonality errors between the sine bridge and the cosine bridge caused by anisotropy present in magnetic material in the first MR element.

Abstract: In one aspect, a method of manufacturing a magnetoresistance (MR) element having layers include ramping up a temperature of a reference layer of the MR element to an annealing temperature of the reference layer by increasing an amplitude of laser pulses applied to the reference layer over time to an amplitude that corresponds to the annealing temperature of the reference layer; applying a magnetic field to the reference layer; and maintaining the amplitude of subsequent laser pulses over time that have the amplitude that corresponds to the annealing temperature of the reference layer until at least the reference layer is annealed.

Abstract: In one aspect, a sensor includes a first metal layer portion and a second metal layer portion separated by an insulator material; a conductive material layer in electrical contact with the first metal layer portion and the second metal layer portion; and a tunnel magnetoresistance (TMR) element positioned on and in electrical contact with the conductive material layer. A first current is configured to flow from the first metal layer portion, through the conductive material layer, to the second metal layer portion, and a second current is configured to flow from the first metal layer portion, through the conductive material layer, through the TMR element, and exiting through a top of the TMR element.

Abstract: In one aspect, a method of manufacturing a magnetoresistance (MR) element having layers include ramping up a temperature of a reference layer of the MR element to an annealing temperature of the reference layer by increasing an amplitude of laser pulses applied to the reference layer over time to an amplitude that corresponds to the annealing temperature of the reference layer; applying a magnetic field to the reference layer; and maintaining the amplitude of subsequent laser pulses over time that have the amplitude that corresponds to the annealing temperature of the reference layer until at least the reference layer is annealed.

Abstract: In one aspect, a sensor includes a first metal layer portion and a second metal layer portion separated by an insulator material; a conductive material layer in electrical contact with the first metal layer portion and the second metal layer portion; and a tunnel magnetoresistance (TMR) element positioned on and in electrical contact with the conductive material layer. A first current is configured to flow from the first metal layer portion, through the conductive material layer, to the second metal layer portion, and a second current is configured to flow from the first metal layer portion, through the conductive material layer, through the TMR element, and exiting through a top of the TMR element.

Abstract: In one aspect, a method includes depositing magnetoresistance (MR) layers of a MR element on a semiconductor structure; depositing a first hard mask on the MR layers; depositing and patterning a first photoresist on the first hard mask using photolithography to expose portions of the first hard mask; etching the exposed portions of the first hard mask; etching a portion of the MR layers using the first hard mask; depositing a second hard mask on a first capping layer; depositing and patterning a second photoresist on the second hard mask using photolithography to expose portions of the second hard mask; etching the exposed portions of the second hard mask; etching the MR element using the second hard mask; etching portions of the first hard mask down to a top MR layer of the MR element; and depositing a conducting material on the top MR layer to form an electroconductive contact.

Abstract: Methods and apparatus for a magnetoresistive (MR) sensor a free layer with a thickness of the CoFeB material to produce out-of-plane sensing for the sensor and a reference layer magnetically coupled to the free layer. A dusting layer of an oxide material is disposed on the free layer to achieve perpendicular magnetic anisotropy for an interface of the oxide layer and the free layer for a desired sensitivity for the sensor.

Abstract: In one aspect, a method includes depositing a capping layer on a semiconductor device structure. The semiconductor device includes a plurality of tunneling magnetoresistance (TMR) elements, a corresponding one hard mask on each TMR element, a metal layer, and a plurality of electroconductive vias directing connecting the TMR elements to the metal layer. The method further includes depositing an insulator on the capping layer, depositing a first photoresist on the insulator, patterning the first photoresist using photolithography to expose portions of the insulator, etching the exposed portions of the insulator and the hard masks to expose top surfaces of the TMR elements, stripping the first photoresist, and depositing a conducting material on the top surfaces of the TMR elements to form an electroconductive contact.

Abstract: In one aspect, a dual double-pinned spin valve element includes a first spin valve that includes a first pinned layer and a second pinned layer and a second spin valve disposed on the first spin valve and comprising a third pinned layer and a fourth pinned layer. The first, second, third and fourth pinned layers each have a magnetization in a first direction.

Abstract: In one aspect, a method includes forming a coil in a coil layer, performing planarization on the coil layer, and depositing a magnetoresistance (MR) element on the planarized coil layer. No dielectric material is between the planarized coil layer and the MR element. In another aspect, a magnetic field sensor includes a substrate, a planarized coil layer comprising a coil on the substrate, a magnetoresistance (MR) element in contact with the planarized coil layer, and a capping layer deposited over the MR element and the planarized coil layer. No dielectric material is between the planarized coil layer and the MR element.

Abstract: Methods and apparatus for a magnetoresistive (MR) sensor including a seed layer having a CoFe layer for canceling hysteresis in the MR sensor. The MR stackup can include a free layer and a reference layer. The seed layer having CoFe provides a desired texturing of the stackup to cancel hysteresis effects.

Abstract: In one aspect, a method includes forming a coil in a coil layer, performing planarization on the coil layer, and depositing a magnetoresistance (MR) element on the planarized coil layer. No dielectric material is between the planarized coil layer and the MR element. In another aspect, a magnetic field sensor includes a substrate, a planarized coil layer comprising a coil on the substrate, a magnetoresistance (MR) element in contact with the planarized coil layer, and a capping layer deposited over the MR element and the planarized coil layer. No dielectric material is between the planarized coil layer and the MR element.

Abstract: In one aspect, a method includes forming a metal layer on a substrate, wherein the metal layer comprises a first coil, forming a planarized insulator layer on the metal layer, forming at least one via in the planarized insulator layer, depositing a magnetoresistance (MR) element on the planarized insulator layer, and forming a second coil extending above the MR element. The at least one via electrically connects to the metal layer on one end and to MR element on the other end.

Abstract: Methods and apparatus for a sensor including a series of tunneling magnetoresistance (TMR) pillars and a heatsink adjacent to at least one of the TMR pillars, where the heatsink comprises Titanium Nitride (TiN).

Abstract: In one aspect, an integrated circuit includes a first conductive layer and a magnetoresistance element (MRE) disposed over and coupled to the first layer through first vias. The MRE is magnetized to produce a first magnetic orientation. The first layer is disposed over and coupled to a second conductive layer in the circuit through second vias. The circuit also includes a metal filler disposed proximate to the MRE. The metal filler is positioned over and coupled to the second layer through third vias. The circuit also includes a thermal dissipation path resulting from a physical input applied to the first MRE. The thermal dissipation path extends through the first through third vias, the first and second layers, an integrated circuit interconnection, and the metal filler.

Abstract: In one aspect, an integrated circuit includes a first conductive layer and a magnetoresistance element (MRE) disposed over and coupled to the first layer through first vias. The MRE is magnetized to produce a first magnetic orientation. The first layer is disposed over and coupled to a second conductive layer in the circuit through second vias. The circuit also includes a metal filler disposed proximate to the MRE. The metal filler is positioned over and coupled to the second layer through third vias. The circuit also includes a thermal dissipation path resulting from a physical input applied to the first MRE. The thermal dissipation path extends through the first through third vias, the first and second layers, an integrated circuit interconnection, and the metal filler.

Abstract: In one aspect, a dual tunnel magnetoresistance (TMR) element structure includes a first TMR element and a second TMR element. The TMR element structure also includes a conducting layer that is disposed between the first TMR element and the second TMR element and is in direct contact with the first TMR element and the second TMR element.

Abstract: In one aspect, a dual double-pinned spin valve element includes a first spin valve that includes a first pinned layer and a second pinned layer and a second spin valve disposed on the first spin valve and comprising a third pinned layer and a fourth pinned layer. The first, second, third and fourth pinned layers each have a magnetization in a first direction.

Abstract: In one aspect, a tunnel magnetoresistance (TMR) element includes a magnesium oxide (MgO) layer, a cobalt iron boron (CoFeB) layer in direct contact with the MgO layer and a cobalt iron (CoFe) layer. The TMR element also includes a tantalum layer in direct contact with the CoFeB layer and the CoFe layer.