Patents by Inventor Paolo Collareta

Paolo Collareta has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of loading a charge of polysilicon into a crucible
    Patent number: 9359691
    Abstract: A method of loading a crucible includes loading a first layer of polysilicon chunks into the crucible and loading a second layer of granular polysilicon into the crucible to form a polysilicon charge such that the packing density of the polysilicon charge within the crucible is greater than 0.70.
    Type: Grant
    Filed: November 26, 2012
    Date of Patent: June 7, 2016
    Assignee: MEMC Electronic Materials SpA
    Inventors: Umberto Martini, Luigi Bonanno, Paolo Collareta, Maria Porrini
  • METHOD OF LOADING A CHARGE OF POLYSILICON INTO A CRUCIBLE
    Publication number: 20140060422
    Abstract: A method of loading a crucible includes loading a first layer of polysilicon chunks into the crucible and loading a second layer of granular polysilicon into the crucible to form a polysilicon charge such that the packing density of the polysilicon charge within the crucible is greater than 0.70.
    Type: Application
    Filed: November 26, 2012
    Publication date: March 6, 2014
    Applicant: MEMC ELECTRONIC MATERIALS S.P.A.
    Inventors: Umberto Martini, Luigi Bonanno, Paolo Collareta, Maria Porrini
  • Analytical method to measure nitrogen concentration in single crystal silicon
    Patent number: 6803576
    Abstract: The present invention is a method for quantitatively measuring nitrogen in Czochralski silicon based on the detection of one or more N—O complexes by means of low temperature Fourier Transform infrared spectroscopy (LT-FTIR) in the far infrared spectral range (FIR).
    Type: Grant
    Filed: September 23, 2002
    Date of Patent: October 12, 2004
    Assignee: MEMC Electronic Materials, SPA
    Inventors: Maria Giovanna Pretto, Maria Porrini, Roberto Scala, Vladimir Voronkov, Paolo Collareta, Robert J. Falster
  • Analytical method to measure nitrogen concentration in single crystal silicon
    Publication number: 20030068826
    Abstract: The present invention is a method for quantitatively measuring nitrogen in Czochralski silicon based on the detection of one or more N—O complexes by means of low temperature Fourier Transform infrared spectroscopy (LT-FTIR) in the far infrared spectral range (FIR).
    Type: Application
    Filed: September 23, 2002
    Publication date: April 10, 2003
    Inventors: Maria Giovanna Pretto, Maria Porrini, Roberto Scala, Vladimir Voronkov, Paolo Collareta, Robert J. Falster