Abstract: Novel applications of electroactive polymer materials, particularly of ionic polymer metal composite (IPMC). Such applications include manipulators with combined electromechanical and electroactive actuators. Applications are particularly suitable in low gravity environment.

Abstract: The present disclosure is related to a device for cooling the surface of a semiconductor device such as an integrated circuit or the like, the cooling device comprising a plurality of channels (3?) which are non-parallel to the surface to be cooled, each channel comprising a plurality of separate electrodes (5) or equivalent conducting areas arranged along the length of each channel, the device further comprising or being connectable to means for applying a voltage to the electrodes or conducting areas in each channel according to a sequence, the sequence being such that a droplet (6) of cooling liquid in a channel may be moved from one electrode to the next, thereby transporting the droplet from the top of the channel to the bottom, from where the droplet impinges on the surface to be cooled.

Abstract: A method for manufacturing thermopile carrier chips comprises forming first type thermocouple legs and second type thermocouple legs on a first surface of a substrate and afterwards removing part of the substrate form a second surface opposite to the first surface, thereby forming a carrier frame from the substrate and at least partially releasing the thermocouple legs from the substrate, wherein the thermocouple legs are attached between parts of the carrier frame. First type thermocouple legs and second type thermocouple legs may be formed on the same substrate or on a separate substrate. In the latter approach both types of thermocouple legs may be optimised independently. The thermocouple legs may be self-supporting or they may be supported by a thin membrane layer. After mounting the thermopile carrier chips in a thermopile unit or in a thermoelectric generator, the sides of the carrier frame to which no thermocouple legs are attached are removed.

Abstract: A thermoelectric generator (TEG) and a method of fabricating the TEG are described. The TEG is designed so that parasitic thermal resistance of air and height of legs of thermocouples forming a thermopile can be varied and optimized independently. The TEG includes a micromachined thermopile sandwiched in between a hot and a cold plate and at least one spacer in between the thermopile and the hot and/or cold plate. The TEG fabrication includes fabricating the thermopiles, a rim, and the cold plate.

Abstract: Novel applications of electroactive polymer materials, particularly of ionic polymer metal composite (IPMC). Such applications include manipulators with combined electromechanical and electroactive actuators. Applications are particularly suitable in low gravity environment.

Abstract: A method for manufacturing thermopile carrier chips comprises forming first type thermocouple legs and second type thermocouple legs on a first surface of a substrate and afterwards removing part of the substrate form a second surface opposite to the first surface, thereby forming a carrier frame from the substrate and at least partially releasing the thermocouple legs from the substrate, wherein the thermocouple legs are attached between parts of the carrier frame. First type thermocouple legs and second type thermocouple lets may be formed on the same substrate or on a separate substrate. In the latter approach both types of thermocouple legs may be optimised independently. The thermocouple legs may be self-supporting or they may be supported by a thin membrane layer. After mounting the thermopile carrier chips in a thermopile unit or in a thermoelectric generator, the sides of the carrier frame to which no thermocouple legs are attached are removed.

Abstract: Electronic devices are disclosed that may be used for infrared radiation detection. An example electronic device includes a substrate, a transistor included in the substrate and a silicon-germanium (Si—Ge) structural layer coupled with the transistor. The structural layer has a stress in a predetermined range, where the predetermined range for the stress is selected prior to deposition of the structural layer. Also, the structural layer is deposited on the substrate subsequent to formation of the transistor such that deposition of the structural layer does not substantially adversely affect the operation of the transistor.

Abstract: Electronic devices are disclosed that may be used for infrared radiation detection. An example electronic device includes a substrate, a transistor included in the substrate and a silicon-germanium (Si—Ge) structural layer coupled with the transistor. The structural layer has a stress in a predetermined range, where the predetermined range for the stress is selected prior to deposition of the structural layer. Also, the structural layer is deposited on the substrate subsequent to formation of the transistor such that deposition of the structural layer does not substantially adversely affect the operation of the transistor.

Abstract: A method of controlling an internal stress in a polycrystalline silicon-germanium layer deposited on a substrate. The method includes selecting a deposition pressure that is at or below atmospheric pressure and selecting a deposition temperature that is no greater than 700° C. The deposition pressure and the deposition temperature are selected so as to achieve an internal stress in the silicon-germanium layer that is within a predetermined range.

Abstract: A thermoelectric generator (TEG) and a method of fabricating the TEG are described. The TEG is designed so that parasitic thermal resistance of air and height of legs of thermocouples forming a thermopile can be varied and optimized independently. The TEG includes a micromachined thermopile sandwiched in between a hot and a cold plate and at least one spacer in between the thermopile and the hot and/or cold plate. The TEG fabrication includes fabricating the thermopiles, a rim, and the cold plate.

Abstract: A method of fabricating an infrared detector, a method of controlling the stress in a polycrystalline SiGE layer and an infrared detector device is disclosed. The method of fabricating includes the steps of forming a sacrificial layer on a substrate; patterning said sacrificial layer; establishing a layer consisting essentially of polycrystalline SiGe on said sacrificial layer; depositing an infrared absorber on said polycrystalline SiGe layer; and thereafter removing the sacrificial layer. The method of controlling the stress in a polycrystalline SiGe layer deposited on a substrate is based on varying the deposition pressure. The infrared detector device comprises an active area and an infrared absorber, wherein the active area comprises a polycrystalline SiGe layer, and is suspended above a substrate.

Abstract: A method of fabricating an infrared detector, a method of controlling the stress in a polycrystalline SiGE layer and an infrared detector device is disclosed. The method of fabricating includes the steps of forming a sacrificial layer on a substrate; patterning said sacrificial layer; establishing a layer consisting essentially of polycrystalline SiGe on said sacrificial layer; depositing an infrared absorber on said polycrystalline SiGe layer; and thereafter removing the sacrificial layer. The method of controlling the stress in a polycrystalline SiGe layer deposited on a substrate is based on varying the deposition pressure. The infrared detector device comprises an active area and an infrared absorber, wherein the active area comprises a polycrystalline SiGe layer, and is suspended above a substrate.

Abstract: A method of fabricating an infrared detector, a method of controlling the stress in a polycrystalline SiGE layer and an infrared detector device is disclosed. The method of fabricating includes the steps of forming a sacrificial layer on a substrate; patterning said sacrificial layer; establishing a layer consisting essentially of polycrystalline SiGe on said sacrificial layer; depositing an infrared absorber on said polycrystalline SiGe layer; and thereafter removing the sacrificial layer. The method of controlling the stress in a polycrystalline SiGe layer deposited on a substrate is based on varying the deposition pressure. The infrared detector device comprises an active area and an infrared absorber, wherein the active area comprises a polycrystalline SiGe layer, and is suspended above a substrate.

Abstract: A method of fabricating an infrared detector, a method of controlling the stress in a polycrystalline SiGE layer and an infrared detector device is disclosed. The method of fabricating includes the steps of forming a sacrificial layer on a substrate; patterning said sacrificial layer; establishing a layer consisting essentially of polycrystalline SiGe on said sacrificial layer; depositing an infrared absorber on said polycrystalline SiGe layer; and thereafter removing the sacrificial layer. The method of controlling the stress in a polycrystalline SiGe layer deposited on a substrate is based on varying the deposition pressure. The infrared detector device comprises an active area and an infrared absorber, wherein the active area comprises a polycrystalline SiGe layer, and is suspended above a substrate.

Abstract: A method of fabricating an infrared detector, a method of controlling the stress in a polycrystalline SiGE layer and an infrared detector device is disclosed. The method of fabricating includes the steps of forming a sacrificial layer on a substrate; patterning said sacrificial layer; establishing a layer consisting essentially of polycrystalline SiGe on said sacrificial layer; depositing an infrared absorber on said polycrystalline SiGe layer; and thereafter removing the sacrificial layer. The method of controlling the stress in a polycrystalline SiGe layer deposited on a substrate is based on varying the deposition pressure. The infrared detector device comprises an active area and an infrared absorber, wherein the active area comprises a polycrystalline SiGe layer, and is suspended above a substrate.

Abstract: A system is provided for monitoring cell arrival in an asynchronous transfer mode (ATM) network, particularly for the detection and handling of lost and misinserted cells. A received cell is accepted (i.e., the user data conveyed in its payload is used for the reassembly process of a transported user signal) if it is recognized as the next expected cell. Otherwise, an acceptance decision for the received cell is delayed if it is not recognized as the next expected cell. The delay occurs until either reception of a subsequent cell or until the acceptance decision is prompted by a predetermined condition of a user data buffer. The predetermined condition of the user data buffer is an emptying of the user data buffer to a point that reassembly of the transported user signal would be unstable. If necessary, dummy data is generated while delaying an acceptance decision for the received cell.