Abstract: A surface acoustic wave device includes at least one transducer; two acoustic reflectors disposed on either side of the at least one transducer so as to form a cavity, each acoustic reflector comprising an array of electrodes in the form of lines parallel with each other, each array comprising a subset of electrodes connected to a reference potential denoted mass defining a first connection type, and a subset of electrodes that are not connected to any potential, i.e. that have a floating connection defining a second connection type; at least one switching circuit configured to modify the distribution of the connections of at least one part of the electrodes of each array between the different connection types.

Abstract: The invention relates to a method of manufacturing a device, the device comprising a superconducting zone (20) and an insulating zone (22) in an arrangement, comprising the steps of: depositing a buffer layer (12) on a portion of a substrate (10), etching the buffer layer (12) to obtain two zones (Z1, Z2), each first zone (Z1) being a zone in which the substrate (10) is covered by the buffer layer (12) and intended to form a respective superconducting zone (20), each second zone (Z2) being a zone in which the substrate (10) is exposed to form a respective insulating zone (22), and depositing a second layer (18) of superconducting material on the entire substrate portion (10), the first layer (12) being made of at least two superimposed sub-layers (14, 16).

Abstract: An optical element is provided, which is transparent at a wavelength of use ?, and which has a super-hydrophobic nanostructured surface that has an anti-reflection property, the surface having an array of pads. —The pads have a nanoscale width, a height h, an aspect ratio of less than 1/2, and the pitch p of the array is such that p<h and the element comprises a top layer of thickness less than h/5 which covers without discontinuity and conformally the nanostructured surface, the top layer being obtained via a step of annealing at a temperature comprised between 500° C. and 1200° C. and being in a material of a hardness greater than the hardness of the material of said nanostructured surface.

Abstract: A surface acoustic wave device: includes at least one transducer; two acoustic reflectors disposed on either side of the at least one transducer so as to form a cavity, each acoustic reflector comprising an array of electrodes in the form of lines parallel with each other, each array comprising a subset of electrodes connected to a reference potential denoted mass defining a first connection type, and a subset of electrodes that are not connected to any potential, i.e. that have a floating connection defining a second connection type; at least one switching circuit configured to modify the distribution of the connections of at least one part of the electrodes of each array between the different connection types.

Abstract: According to one aspect of the invention, there is proposed a capacitive radiofrequency MicroElectroMechanical System or capacitive RF MEMS comprising a metallic membrane suspended above an RF transmission line and resting on ground planes, and exhibiting a lower face, an upper face opposite to the lower face and a first layer comprising a refractory metallic material at least partially covering the upper face of the membrane so as to prevent the heating of the membrane.

Abstract: According to one aspect of the invention, there is proposed a capacitive radiofrequency MicroElectroMechanical System or capacitive RF MEMS comprising a metallic membrane suspended above an RF transmission line and resting on ground planes, and exhibiting a lower face, an upper face opposite to the lower face and a first layer comprising a refractory metallic material at least partially covering the upper face of the membrane so as to prevent the heating of the membrane.

Abstract: A passive radiofrequency microelectronic components for an integrated circuit which includes a dielectric substrate and at least one metal conductive layer positioned on said substrate. The conductive layer including at least one first metal conductive portion and a second metal conductive portion separated by an insulation. A microelectronic component according to the invention includes at least one graphene layer positioned so that a radiofrequency or hyperfrequency signal crosses said at least one graphene layer when it is transmitted between said first metal conductive portion and said second metal conductive portion, said graphene layer being able, when it is subject to an electric potential, to transmit said radiofrequency or hyperfrequency signal along a first direction and to attenuate said radiofrequency or hyperfrequency signal along a second direction opposite to said first direction.

Abstract: A passive radiofrequency microelectronic components for an integrated circuit which includes a dielectric substrate and at least one metal conductive layer positioned on said substrate. The conductive layer including at least one first metal conductive portion and a second metal conductive portion separated by an insulation. A microelectronic component according to the invention includes at least one graphene layer positioned so that a radiofrequency or hyperfrequency signal crosses said at least one graphene layer when it is transmitted between said first metal conductive portion and said second metal conductive portion, said graphene layer being able, when it is subject to an electric potential, to transmit said radiofrequency or hyperfrequency signal along a first direction and to attenuate said radiofrequency or hyperfrequency signal along a second direction opposite to said first direction.