Abstract: Crystal pulling system having a housing and a crucible assembly are disclosed. The system includes a heat shield that defines a central passage through which an ingot passes during ingot growth. A cover member is moveable within the heat shield along a pull axis. The cover member may include an insulation layer. The cover member covers at least a portion of the charge during meltdown.

Abstract: Crystal pulling system having a housing and a crucible assembly are disclosed. The system includes a heat shield that defines a central passage through which an ingot passes during ingot growth. A cover member is moveable within the heat shield along a pull axis. The cover member may include an insulation layer. The cover member covers at least a portion of the charge during meltdown.

Abstract: Methods for producing single crystal silicon ingots by Continuous Czochralski (CCz) are disclosed. One or more plates are added to the outer melt zone of a crucible assembly such that the plates are disposed on the initial charge of solid-state silicon. The silicon is melted and the plates float on the silicon melt. When silicon is added to the outer melt zone to replenish the melt during ingot growth, the silicon contacts the plates rather than falling directly into the melt in the outer melt zone. The silicon melts and falls through openings that extend through the thickness of the plates.

Abstract: An apparatus for the gas treatment including a reaction chamber. The reaction chamber including an inlet opening of a flow of gas to be treated; means for the formation of ionizing electrical discharges adapted to interact with the gas to be treated to form a plasma state for obtaining a flow of treated gas which includes at least a high-added value fraction and at least a waste fraction; an outlet opening of the high-added value fraction arranged downstream of the means for the formation with respect to the direction of forward movement of the flow of gas to be treated inside the reaction chamber; reintroduction means for reintroducing the waste fraction inside the reaction chamber, and the reintroduction means being arranged downstream of the means for the formation with respect to the direction of forward movement.

Abstract: Crystal pulling system having a housing and a crucible assembly are disclosed. The system includes a heat shield that defines a central passage through which an ingot passes during ingot growth. A cover member is moveable within the heat shield along a pull axis. The cover member may include an insulation layer. The cover member covers at least a portion of the charge during meltdown.

Abstract: An apparatus for the gas treatment including a reaction chamber. The reaction chamber including an inlet opening of a flow of gas to be treated; means for the formation of ionizing electrical discharges adapted to interact with the gas to be treated to form a plasma state for obtaining a flow of treated gas which includes at least a high-added value fraction and at least a waste fraction; an outlet opening of the high-added value fraction arranged downstream of the means for the formation with respect to the direction of forward movement of the flow of gas to be treated inside the reaction chamber; reintroduction means for reintroducing the waste fraction inside the reaction chamber, and the reintroduction means being arranged downstream of the means for the formation with respect to the direction of forward movement.

Abstract: A heat shield assembly is used in a Czochralski crystal puller for selectively shielding a monocrystalline ingot of semiconductor material to control the type and number density of agglomerated defects in the crystal structure of the ingot. The heat shield assembly has an upper heat shield connected to a lower heat shield. The upper and lower heat shields are connected to each other and slidingly connected to an intermediate heat shield. The lower heat shield is able to telescope up into the intermediate heat shield to minimize the profile of the heat shield assembly located within a crystal growth chamber of the crystal puller. However when needed to control formation of the monocrystalline ingot, the lower heat shield may be extended from the intermediate heat shield and project downwardly into the crystal puller crucible in close proximity to an upper surface of molten semiconductor source material in the crucible. A method employing the heat shield assembly is also disclosed.