Abstract: A photonic semiconductor device and method are provided that ensure that the surface of the device upon completion of the SAG process is planar, or at least substantially planar, such that performance of the subsequent processes is facilitated, thereby enabling higher manufacturing yield to be achieved. A photonic semiconductor device and method are also provided that ensure that the isolation region of the device will have high resistance and low capacitance, without requiring the placement of a thick dielectric material beneath each of the contact pads. Eliminating the need to place thick dielectric materials underneath the contact pads eliminates the risk that the contact pads will peel away from the assembly.

Abstract: A photonic semiconductor device and method are provided that ensure that the surface of the device upon completion of the SAG process is planar, or at least substantially planar, such that performance of the subsequent processes is facilitated, thereby enabling higher manufacturing yield to be achieved. A photonic semiconductor device and method are also provided that ensure that the isolation region of the device will have high resistance and low capacitance, without requiring the placement of a thick dielectric material beneath each of the contact pads. Eliminating the need to place thick dielectric materials underneath the contact pads eliminates the risk that the contact pads will peel away from the assembly.

Abstract: A photonic semiconductor device and method are provided that ensure that the surface of the device upon completion of the SAG process is planar, or at least substantially planar, such that performance of the subsequent processes is facilitated, thereby enabling higher manufacturing yield to be achieved. A photonic semiconductor device and method are also provided that ensure that the isolation region of the device will have high resistance and low capacitance, without requiring the placement of a thick dielectric material beneath each of the contact pads. Eliminating the need to place thick dielectric materials underneath the contact pads eliminates the risk that the contact pads will peel away from the assembly.

Abstract: A photonic semiconductor device and method are provided that ensure that the surface of the device upon completion of the SAG process is planar, or at least substantially planar, such that performance of the subsequent processes is facilitated, thereby enabling higher manufacturing yield to be achieved. A photonic semiconductor device and method are also provided that ensure that the isolation region of the device will have high resistance and low capacitance, without requiring the placement of a thick dielectric material beneath each of the contact pads. Eliminating the need to place thick dielectric materials underneath the contact pads eliminates the risk that the contact pads will peel away from the assembly.

Abstract: An apparatus for monitoring deposition processes which includes: a holder member for holding a device exposed to the coating process, the device adapted to be activated during the position process to generate a radiation affected by the deposition process, a detector for detecting the radiation to produce a monitoring signal of the deposition process, and an optical propagation path associated with the holder member to propagate the radiation towards the detector. The detector is unexposed to the deposition process, which preferably occurs by causing the optical propagation path to the photodetector to include an integration sphere provided in the holder member.

Abstract: A carrier for treating photonic devices such as laser bars is provided with a recessed formation with a web surface for supporting the photonic device in contact therewith as well as at least one side surface forming an abutment surface for engaging a respective end facet of the photonic device. The photonic device is arranged in the recessed formation so that the lower surface of the photonic device is masked with respect to the treatment source, while at least one end facet of the photonic device engages at least one side surface by leaving exposed a surface to be treated. A protection member is placed in contact with the upper surface of the photonic device and the carrier with the photonic device arranged therein is exposed to the treatment source. The treatment is thus effective substantially exclusively on the surfaces of the end facets to be treated.

Abstract: A carrier (1) for treating photonic devices such as laser bars (B) is provided with a recessed formation (3) with a web surface (3a) for supporting the photonic device in contact therewith as well as at least one side surface (3b) forming an abutment surface for engaging a respective end facet (S1, S2) of the photonic device. The photonic device (B) is arranged in the recessed formation (3) so that the lower surface (LB) of the photonic device is masked with respect to the treatment source, while at least one end facet (S1, S2) of the photonic device engages at least one side surface (3b) by leaving exposed a surface to be treated. A protection member (5) is placed in contact with the upper surface (UB) of the photonic device (B) and the carrier (1) with the photonic device (B) arranged therein is exposed to the treatment source (E). The treatment is thus effective substantially exclusively on the surfaces of the end facets (S1, S2) to be treated.