Abstract: Embodiments of the present technology include semiconductor processing methods. The methods may include providing a silicon-containing precursor and a dopant precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the semiconductor processing chamber. A silicon-containing material may be formed on the substrate. The methods may include contacting the silicon-containing material with the silicon-containing precursor and the dopant precursor. The methods may include forming a doped silicon-containing material on the silicon-containing material. The methods may include oxidizing the substrate. The oxidizing may form an oxidized doped silicon-containing material. The methods may include etching the oxidized doped silicon-containing material.

Abstract: Methods for adjusting a work function of a structure in a substrate leverage near surface doping. In some embodiments, a method for adjusting a work function of a structure in a substrate may include coating surfaces of the structure to form a doping layer in a non-solid phase that contains dopants on the surfaces of the structure and performing a dopant diffusion process using an oxidation process to drive the dopants through the surfaces the structure to embed the dopants in the structure to adjust the work function of the structure near the surfaces to form an abrupt junction profile and form an oxidation layer on the surfaces of the structure. The coating of the surfaces of the structure may be performed using a gas-phase or liquid-phase process.

Abstract: Methods for adjusting a work function of a structure in a substrate leverage near surface doping. In some embodiments, a method for adjusting a work function of a structure in a substrate may include growing an epitaxial layer on surfaces of the structure to form a homogeneous passivation region as part of a substrate material of the substrate and performing a dopant diffusion process to further embed the dopants into surfaces of the structure to adjust a work function of the structure, wherein the dopant diffusion process is performed at less than approximately 450 degrees Celsius.

Abstract: Methods for forming light emitting diodes (LEDs) that leverage cavity profiles and induced stresses to alter emitted wavelengths of the LEDs. In some embodiments, the method includes forming a cavity on a substrate where the cavity has a cavity profile that is configured to accept an emitter pixel structure for an LED, forming at least one passivation layer in the cavity, and forming at least one optical layer in the cavity on at least a portion of one of the at least one passivation layer. The at least one optical layer is configured to increase a lumen output of the emitter pixel structure. The method further includes forming the emitter pixel structure in the cavity on the at least one optical layer of the emitter pixel structure where the cavity profile is configured to adjust an emitted light wavelength of the emitter pixel structure.

Abstract: Methods for adjusting a work function of a structure in a substrate leverage near surface doping. In some embodiments, a method for adjusting a work function of a structure in a substrate may include coating surfaces of the structure to form a doping layer in a non-solid phase that contains dopants on the surfaces of the structure and performing a dopant diffusion process using an oxidation process to drive the dopants through the surfaces the structure to embed the dopants in the structure to adjust the work function of the structure near the surfaces to form an abrupt junction profile and form an oxidation layer on the surfaces of the structure. The coating of the surfaces of the structure may be performed using a gas-phase or liquid-phase process.

Abstract: Methods for integrating an image sensor and a light emitting diode (LED) leverage conformal depositions to achieve a single-sided, same height arrangement of contacts. In some embodiments, the method includes forming a plurality of cavities on a substrate where the plurality of cavities have a cavity profile and are configured to accept an emitter pixel structure or a sensor pixel structure, forming an emitter pixel structure in a cavity on the substrate where the emitter pixel structure is configured to have a plurality of exposed direct emitter contact areas on a same side and at a same height, and forming at least one sensor pixel structure in a cavity on the substrate where the sensor pixel structure is configured to have a plurality of exposed direct sensor contact areas on a same side and at a same height.

Abstract: Methods for adjusting a work function of a structure in a substrate leverage near surface doping. In some embodiments, a method for adjusting a work function of a structure in a substrate may include growing an epitaxial layer on surfaces of the structure to form a homogeneous passivation region as part of a substrate material of the substrate and performing a dopant diffusion process to further embed the dopants into surfaces of the structure to adjust a work function of the structure, wherein the dopant diffusion process is performed at less than approximately 450 degrees Celsius.

Abstract: Methods for forming a trench structure with passivated surfaces. In some embodiments, a method of forming a trench structure may include etching a trench into a substrate material of the substrate, forming an oxide layer on surfaces of the trench using a dry oxide process at a temperature of less than approximately 450 degrees Celsius, selectively removing the oxide layer from surfaces of the trench, and forming a passivation layer on surfaces of the trench to form a homogeneous passivation region as part of the substrate material using a low temperature process of less than approximately 450 degrees Celsius.

Abstract: Methods for forming a deep trench isolation (DTI) structure with only two interfaces. In some embodiments, a method of forming a deep trench isolation structure may include etching a trench with a high aspect ratio into a substrate material, repairing the surfaces of the trench from damage caused by etching of the trench, growing an epitaxial layer on the surfaces of the trench to form a homogeneous passivation region as part of the substrate material, doping the epitaxial layer with a dopant to form a passivation charge region, performing a charge diffusion process to embed the dopant into the substrate material, forming a conformal liner layer on the homogeneous passivation region in the trench, and filling the trench with an optically reflective material.

Abstract: Methods for forming image sensors that leverage cavity profiles and induced stresses. In some embodiments, the method includes forming a cavity in a substrate where the cavity has a cavity profile that is configured to accept a sensor pixel structure for an image sensor, forming at least one passivation layer in the cavity, and forming at least one optical layer in the cavity on at least a portion of one of the at least one passivation layer. The at least one optical layer is configured to provide, at least, pixel-to-pixel optical isolation of the sensor pixel structure. The method further includes forming the sensor pixel structure in the cavity on the at least one optical layer of the sensor pixel structure where the cavity profile is configured to control stress on the sensor pixel structure.

Abstract: Generally, examples described herein relate to methods and processing chambers and systems for forming a stacked pixel structure using epitaxial growth processes and device structures formed thereby. In an example, a first sensor layer is epitaxially grown on a crystalline surface on a substrate. A first isolation structure is epitaxially grown on the first sensor layer. A second sensor layer is epitaxially grown on the first isolation structure. A second isolation structure is epitaxially grown on the second sensor layer. A third sensor layer is epitaxially grown on the second isolation structure.

Abstract: Methods for forming image sensors that leverage cavity profiles and induced stresses. In some embodiments, the method includes forming a cavity in a substrate where the cavity has a cavity profile that is configured to accept a sensor pixel structure for an image sensor, forming at least one passivation layer in the cavity, and forming at least one optical layer in the cavity on at least a portion of one of the at least one passivation layer. The at least one optical layer is configured to provide, at least, pixel-to-pixel optical isolation of the sensor pixel structure. The method further includes forming the sensor pixel structure in the cavity on the at least one optical layer of the sensor pixel structure where the cavity profile is configured to control stress on the sensor pixel structure.

Abstract: Methods for forming light emitting diodes (LEDs) that leverage cavity profiles and induced stresses to alter emitted wavelengths of the LEDs. In some embodiments, the method includes forming a cavity on a substrate where the cavity has a cavity profile that is configured to accept an emitter pixel structure for an LED, forming at least one passivation layer in the cavity, and forming at least one optical layer in the cavity on at least a portion of one of the at least one passivation layer. The at least one optical layer is configured to increase a lumen output of the emitter pixel structure. The method further includes forming the emitter pixel structure in the cavity on the at least one optical layer of the emitter pixel structure where the cavity profile is configured to adjust an emitted light wavelength of the emitter pixel structure.

Abstract: Methods for integrating an image sensor and a light emitting diode (LED) leverage conformal depositions to achieve a single-sided, same height arrangement of contacts. In some embodiments, the method includes forming a plurality of cavities on a substrate where the plurality of cavities have a cavity profile and are configured to accept an emitter pixel structure or a sensor pixel structure, forming an emitter pixel structure in a cavity on the substrate where the emitter pixel structure is configured to have a plurality of exposed direct emitter contact areas on a same side and at a same height, and forming at least one sensor pixel structure in a cavity on the substrate where the sensor pixel structure is configured to have a plurality of exposed direct sensor contact areas on a same side and at a same height.

Abstract: Generally, examples described herein relate to methods and processing chambers and systems for forming a stacked pixel structure using epitaxial growth processes and device structures formed thereby. In an example, a first sensor layer is epitaxially grown on a crystalline surface on a substrate. A first isolation structure is epitaxially grown on the first sensor layer. A second sensor layer is epitaxially grown on the first isolation structure. A second isolation structure is epitaxially grown on the second sensor layer. A third sensor layer is epitaxially grown on the second isolation structure.

Abstract: A method of fabricating a semiconductor device includes forming an interconnect structure over a front side of a sensor substrate, thinning the sensor substrate from a back side of the sensor substrate, etching trenches into the sensor substrate, pre-cleaning an exposed surface of the sensor substrate, epitaxially growing a charge layer directly on the pre-cleaned exposed surface of the sensor substrate, and forming isolation structures within the etched trenches.

Abstract: A method for forming an anti-reflective coating (ARC) includes positioning a substrate below a target and flowing a first gas to deposit a first portion of the graded ARC onto the substrate. The method includes gradually flowing a second gas to deposit a second portion of the graded ARC, and gradually flowing a third gas while simultaneously gradually decreasing the flow of the second gas to deposit a third portion of the graded ARC. The method also includes flowing the third gas after stopping the flow of the second gas to form a fourth portion of the graded ARC. In another embodiment a film stack having a substrate having a graded ARC disposed thereon is provided. The graded ARC includes a first portion, a second portion disposed on the first portion, a third portion disposed on the second portion, and a fourth portion disposed on the third portion.

Abstract: A method for forming an anti-reflective coating (ARC) includes positioning a substrate below a target and flowing a first gas to deposit a first portion of the graded ARC onto the substrate. The method includes gradually flowing a second gas to deposit a second portion of the graded ARC, and gradually flowing a third gas while simultaneously gradually decreasing the flow of the second gas to deposit a third portion of the graded ARC. The method also includes flowing the third gas after stopping the flow of the second gas to form a fourth portion of the graded ARC. In another embodiment a film stack having a substrate having a graded ARC disposed thereon is provided. The graded ARC includes a first portion, a second portion disposed on the first portion, a third portion disposed on the second portion, and a fourth portion disposed on the third portion.

Abstract: Light wave separation lattices and methods of formation are provided herein. In some embodiments, a light wave separation lattice includes a first layer having the formula ROxNy, wherein the first layer has a first refractive index; and a second layer, different from the first layer, disposed atop the first layer, and having the formula R?OxNy, wherein the second layer has a second refractive index different from the first refractive index, and wherein R and R? are each one of a metal or a dielectric material. In some embodiments, a method of forming a light wave separation lattice includes depositing a first layer having a predetermined desired refractive index atop a substrate by a physical vapor deposition process; and depositing a second layer, different from the first layer, atop the first layer, wherein the second layer has a predetermined second refractive index different from the first refractive index.

Abstract: Light wave separation lattices and methods of formation are provided herein. In some embodiments, a light wave separation lattice includes a first layer having the formula ROXNY, wherein the first layer has a first refractive index; and a second layer, different from the first layer, disposed atop the first layer, and having the formula R?OXNY, wherein the second layer has a second refractive index different from the first refractive index, and wherein R and R? are each one of a metal or a dielectric material. In some embodiments, a method of forming a light wave separation lattice includes depositing a first layer having a predetermined desired refractive index atop a substrate by a physical vapor deposition process; and depositing a second layer, different from the first layer, atop the first layer, wherein the second layer has a predetermined second refractive index different from the first refractive index.