Patents by Inventor Param H. Tewari

Param H. Tewari has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5098740
    Abstract: Solids that are subject to a deleterious reaction with a dispersion medium in which they are suspended can be safely comminuted in that dispersion medium by providing therein a surfactant capable of reacting with the solid at a faster rate than the dispersion medium can so react to thereby suppress the deleterious reaction. In particular, unsintered silicon nitride or silicon carbide which when contacted with water would decompose to form silica on their surfaces can be milled in water, without producing excessive amounts of silica. The dispersions produced are sufficiently stable to be filtered through openings of 2 microns with loss of no more than 5% of the silicon nitride or carbide. Stable dispersions of solids in liquids can be coated with a different solid by surface precipitation under conditions which preclude the formation of a bulk precipitate.
    Type: Grant
    Filed: December 13, 1989
    Date of Patent: March 24, 1992
    Assignee: Norton Company
    Inventor: Param H. Tewari
  • Patent number: 4610863
    Abstract: An improved supercritical drying process for forming transparent silica aerogel arrays is described. The process is of the type utilizing the steps of hydrolyzing and condensing aloxides to form alcogels. A subsequent step removes the alcohol to form aerogels. The improvement includes the additional step, after alcogels are formed, of substituting a solvent, such as CO.sub.2, for the alcohol in the alcogels, the solvent having a critical temperature less than the critical temperature of the alcohol. The resulting gels are dried at a supercritical temperature for the selected solvent, such as CO.sub.2, to thereby provide a transparent aerogel array within a substantially reduced (days-to-hours) time period. The supercritical drying occurs at about 40.degree. C. instead of at about 270.degree. C. The improved process provides increased yields of large scale, structurally sound arrays.
    Type: Grant
    Filed: September 4, 1985
    Date of Patent: September 9, 1986
    Assignee: The United States of America as represented by the United States Department of Energy
    Inventors: Param H. Tewari, Arlon J. Hunt