Patents by Inventor Paramjit Singh

Paramjit Singh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20100172993
    Abstract: The present invention discloses compositions having particles comprising, inorganic element; one or more active ingredient and optionally a release rate modulating agent, suitable for the delivery of active ingredients to human and animal tissues. The particles are nanoparticles or microparticles or mixtures thereof, made preferably by sol-gel method. The compositions are useful for application to the topical or mucosal surfaces preferably in the form of creams, gels, lotions, dry powders, spray, foam and other suitable forms.
    Type: Application
    Filed: August 10, 2007
    Publication date: July 8, 2010
    Inventors: Amarjit Singh, Sarabjit Singh, Paramjit Singh, Rajesh Jain
  • Patent number: 6839887
    Abstract: One embodiment discloses receiving a number of parameter values for a multi-component circuit. From the received parameter values, a number of parasitic values for various components in the multi-component circuit are determined. For example, parasitic resistor values and parasitic capacitor values for transistors in the multi-component circuit are determined. The parasitic resistor values and parasitic capacitor values are used in simulating the multi-component circuit. According to a disclosed embodiment, a layout of the multi-component circuit is then generated that results in parasitic values that are the same as the parasitic values already used in simulating the multi-component circuit. As such, the parasitic values of the multi-component circuit have already been taken into account in the initial circuit simulation and there is no need to extract the internal parasitics of the multi-component circuit for further circuit simulations.
    Type: Grant
    Filed: October 24, 2001
    Date of Patent: January 4, 2005
    Assignee: Conexant Systems, Inc.
    Inventors: Koen Lampaer, Andy Brotman, Paolo Miliozzi, Paramjit Singh, Mishel Matloubian, Bijan Bhattacharyya
  • Patent number: 6728942
    Abstract: In one disclosed embodiment, a number of parameter values for an RF MOSFET are received. Examples of parameter values are style, bulk contact, finger width, finger length, number of fingers, current, and slice parameter values. From the received parameter values, a number of parasitic values for a subcircuit model of the RF MOSFET are determined. For example, parasitic resistor values and parasitic capacitor values of the RF MOSFET are determined. The parasitic resistor values and parasitic capacitor values are used in simulating the circuit comprising the RF MOSFET. An RF MOSFET layout is then generated that results in parasitic values that are the same as the parasitic values already used in simulating the circuit comprising the RF MOSFET. As such, the parasitic values of the RF MOSFET have already been taken into account in the initial circuit simulation.
    Type: Grant
    Filed: June 12, 2001
    Date of Patent: April 27, 2004
    Assignee: Conexant Systems, Inc.
    Inventors: Koen Lampaert, Andy Brotman, Paolo Miliozzi, Paramjit Singh, Mishel Matloubian, Bijan Bhattacharyya
  • Patent number: 6588002
    Abstract: In one embodiment, a number of parameter values for an inductor, such as a spiral inductor, are received. Examples of the parameter values are Number of Turns, Spacing, Width, Xsize, and Ysize parameter values. From the received parameter values, a number of parasitic values for a subcircuit model of the inductor are determined. For example, parasitic resistor values and parasitic capacitor values of the inductor are determined. The parasitic resistor values and parasitic capacitor values are used in simulating the circuit comprising the inductor. An inductor layout is then generated that results in parasitic values that are the same as the parasitic values already used in simulating the circuit comprising the inductor. As such, the parasitic values of the inductor have already been taken into account in the initial circuit simulation and, there is no need to extract the internal parasitics of the inductor for further circuit simulations.
    Type: Grant
    Filed: August 28, 2001
    Date of Patent: July 1, 2003
    Assignee: Conexant Systems, Inc.
    Inventors: Koen Lampaert, Andy Brotman, Paolo Miliozzi, Paramjit Singh, Mishel Matloubian, Bijan Bhattacharyya, Francis M Rotella, Rajesh Divecha
  • Publication number: 20020188920
    Abstract: In one disclosed embodiment, a number of parameter values for an RF MOSFET are received. Examples of parameter values are style, bulk contact, finger width, finger length, number of fingers, current, and slice parameter values. From the received parameter values, a number of parasitic values for a subcircuit model of the RF MOSFET are determined. For example, parasitic resistor values and parasitic capacitor values of the RF MOSFET are determined. The parasitic resistor values and parasitic capacitor values are used in simulating the circuit comprising the RF MOSFET. An RF MOSFET layout is then generated that results in parasitic values that are the same as the parasitic values already used in simulating the circuit comprising the RF MOSFET. As such, the parasitic values of the RF MOSFET have already been taken into account in the initial circuit simulation.
    Type: Application
    Filed: June 12, 2001
    Publication date: December 12, 2002
    Applicant: CONEXANT SYSTEMS, INC.
    Inventors: Koen Lampaert, Andy Brotman, Paolo Miliozzi, Paramjit Singh, Mishel Matloubian, Bijan Bhattacharyya
  • Patent number: 6118167
    Abstract: A polycrystalline silicon coated nitride-lined shallow trench technique for isolating active regions on an integrated circuit involves reducing the oxide encroachment and the "bird's beak" structure. The technique involves forming an isolation trench, or recess, in the substrate. This recess is then lined with a layer of silicon dioxide layer, and then a layer of silicon nitride. Subsequently, a polycrystalline silicon material is deposited in the recess and is then oxidized to form a field oxide and planarized. Since the recess is nitride-lined, which prevents oxidizing species from reaching the oxide layer beneath the nitride layer, and the polycrystalline silicon is oxidized, the result is zero oxide encroachment resulting in the elimination of the "bird's beak" structure.
    Type: Grant
    Filed: November 13, 1997
    Date of Patent: September 12, 2000
    Assignee: National Semiconductor Corporation
    Inventors: Eugene DiSimone, Paramjit Singh
  • Patent number: 5976950
    Abstract: A side wall masked isolation (SWAMI) technique for isolating active regions on an integrated circuit involves reducing the "bird's beak" structure. The technique involves forming an isolation recess in the substrate, and then lining the recess with a layer of silicon dioxide, and then a layer of silicon nitride. Then, oxide spacers are formed on each of the sidewalls of the recess. The recess is then anisotropically etched until the substrate at the bottom of the recess is exposed. This etch process involves removing portion of both the silicon dioxide and the silicon nitride layers formed at the bottom of the recess. Subsequently, a layer of polycrystalline silicon material is deposited in the recess and is then etched back and oxidized to form a field oxide. Since the polycrystalline silicon is oxidized, the result is negligible oxide encroachment resulting in a reduction in the "bird's beak" structure.
    Type: Grant
    Filed: July 21, 1998
    Date of Patent: November 2, 1999
    Assignee: National Semiconductor Corporation
    Inventors: Eugene DiSimone, Paramjit Singh
  • Patent number: 5577777
    Abstract: A ground joint coupling for hoses comprises a stem, a ground joint head formed at a first end portion of the stem, a spud having a first end portion, a molded polymeric annular seat adapted to be positioned between the ground joint head of the stem and the first end portion of the spud, and a nut for connecting the stem to the spud and for compressing the seat between the ground joint head of the stem and the first end portion of the spud. The seat may be made of polytetrafluoroethylene, ultra high molecular weight polyethylene, polyetheretherketone compounds, polyphenylene sulfide compounds, fluoroplastic compounds, or acetal compounds, and the seat may include a filler, such as glass, moly, carbon, bronze, graphite, calcium fluoride, polyphenoline-sulfide, ceramics, silica-based minerals, or combinations thereof.
    Type: Grant
    Filed: November 7, 1994
    Date of Patent: November 26, 1996
    Assignee: Dixon Valve & Coupling Co.
    Inventors: Paramjit Singh, Madhu K. Shenoy, Charles H. Schappert
  • Patent number: 5324750
    Abstract: Cyclodextrin derivatives and inclusion complexes having increased solubility and stability are provided. Cyclodextrin derivatives include amino and other modified cyclodextrins, and linked cyclodextrins. Inclusion complexes comprising the foregoing cyclodextrins, and processes for making the cyclodextrin derivatives are disclosed. Also disclosed are cyclodextrin derivatives comprising otherwise substituted or unsubstituted cyclodextrins covalently bonded to agents such as pharmaceuticals. The covalent bond, when broken, yields the agent in active form. Pharmaceutical compositions and methods of treating an animal host are also described, as well as chromatographic compositions and a method for separating racemic mixtures.
    Type: Grant
    Filed: November 20, 1992
    Date of Patent: June 28, 1994
    Assignee: Australia Commercial Research & Development Limited
    Inventors: Stephen F. Lincoln, John H. Coates, Christopher J. Easton, Stephen J. Van Eyk, Bruce L. May, Paramjit Singh, Michael L. Williams, Martyn A. Stile
  • Patent number: 4603888
    Abstract: An end fitting for rubber steam hoses with metal liners of interlocking construction comprises a stem that has zig-zag serrations formed on an intermediate portion of its outer surface for contacting and retaining the inside of a rubber hose, and has rib-type right hand spirals formed on an inner end portion of its outer surface so that a metal liner of interlocking construction is adapted to be screwed onto the spirals for retention of the metal liner from being pulled off the ste. on the stem and preventing the metal liner from being pulled off the stem. A clamp is provided that clamps the rubber hose against the zig-zag serrations to seal the end fitting against the escape of steam, and clamps the rubber hose against the metal liner and the metal liner against the spirals and the inner end portion of the stem outer surface to provide added retention of the metal liner from being pulled off the stem.
    Type: Grant
    Filed: September 18, 1985
    Date of Patent: August 5, 1986
    Assignee: Dixon Valve & Coupling Company
    Inventors: Richard L. Goodall, Paramjit Singh