Patents by Inventor Parijat P. Deb

Parijat P. Deb has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Reflective structure for light emitting devices
    Patent number: 10665759
    Abstract: Described is a reflector for light emitting devices. A device includes a reflector in contact with a first n-type region and a second n-type region. The reflector includes multiple layers. One layer having an index of refraction different than the other layers. The device includes a light emitting region (LER) in contact with the second n-type region, a p-type region in contact with the LER and a light extraction region (LXR) in contact with the p-type region. A majority of light escapes the device through the LXR. The reflector reflects light emitted by the LER back towards the LXR. In another device, a reflector is embedded in a n-type region of the device. The device includes a LER, a p-type region, and a wavelength converter structure. The reflector reflects light emitted by the wavelength converting structure back towards the wavelength converting structure.
    Type: Grant
    Filed: September 25, 2017
    Date of Patent: May 26, 2020
    Assignee: LUMILEDS LLC
    Inventors: Erik C. Nelson, Parijat P. Deb
  • REFLECTIVE STRUCTURE FOR LIGHT EMITTING DEVICES
    Publication number: 20180090645
    Abstract: Described is a reflector for light emitting devices. A device includes a reflector in contact with a first n-type region and a second n-type region. The reflector includes multiple layers. One layer having an index of refraction different than the other layers. The device includes a light emitting region (LER) in contact with the second n-type region, a p-type region in contact with the LER and a light extraction region (LXR) in contact with the p-type region. A majority of light escapes the device through the LXR. The reflector reflects light emitted by the LER back towards the LXR. In another device, a reflector is embedded in a n-type region of the device. The device includes a LER, a p-type region, and a wavelength converter structure. The reflector reflects light emitted by the wavelength converting structure back towards the wavelength converting structure.
    Type: Application
    Filed: September 25, 2017
    Publication date: March 29, 2018
    Applicant: Lumileds LLC
    Inventors: Erik C. Nelson, Parijat P. Deb
  • III-P LIGHT EMITTING DEVICE WITH A SUPERLATTICE
    Publication number: 20180033912
    Abstract: A device includes a semiconductor structure comprising a III-P light emitting layer disposed between an n-type region and a p-type region. The n-type region includes a superlattice. The superlattice includes a plurality of stacked layer pairs, each layer pair including a first layer and a second layer. The first layer has a smaller aluminum composition than the second layer.
    Type: Application
    Filed: July 26, 2017
    Publication date: February 1, 2018
    Inventors: Lekhnath Bhusal, Theodore Chung, Suk Choi, Erik C. Nelson, Parijat P. Deb