Abstract: A non-transitory computer readable storage medium encoded with computer readable biological image processing instruction, which, when executed by processor circuitry, cause the processor circuitry to perform segmentation of a biological image to perform: reducing a size of the biological image that has been input and extracting a feature point, by adding an attention block for averaging channels to a convolution block of the biological image; and outputting information relating to a feature image obtained by segmenting the biological image including the extracted feature point, by contracting the channels in a state in which the attention block has been added to the convolution block.

Abstract: Alloy powder of a composition formula Fe100-a-b-c-d-e-fCoaBbSicPdCueCf having an amorphous phase as a main phase is provided. Parameters satisfy the following conditions: 3.5?a?4.5 at %, 6?b?15 at %, 2?c?11 at %, 3?d?5 at %, 0.5?e?1.1 at %, and 0?f?2 at %. With this composition, the alloy powder has good magnetic characteristics even when it has a large particle diameter such as 90 ?m. Therefore, yield thereof is improved.

Abstract: Alloy powder of a composition formula Fe100-a-b-c-d-e-fCoaBbSicPdCueCf having an amorphous phase as a main phase is provided. Parameters satisfy the following conditions: 3.5?a?4.5 at %, 6?b?15 at %, 2?c?11 at %, 3?d?5 at %, 0.5?e?1.1 at %, and 0?f?2 at %. With this composition, the alloy powder has good magnetic characteristics even when it has a large particle diameter such as 90 ?m. Therefore, yield thereof is improved.

Abstract: A method is provided for producing a doped dilute ferromagnetic semiconductor material, by doping Zinc Oxide in bulk form with manganese to a maximum level of 5 atomic percent concentration. The material is preferably sintered at a maximum temperature of 650° C. The result of this process is a semiconductor material comprising Mn-doped ZnO with a Mn concentration not exceeding 5 atomic percent, wherein the Mn-doped ZnO is ferromagnetic within at least a part of the temperature range from about 218 Kelvin to about 425 Kelvin.

Abstract: A semi-conducting material, a method for producing the material, and ways of implementing the material, wherein said material is doped with Cu or CuO, and is ferromagnetic at least at one temperature in the range between ?55° C. and 125° C. Typically the material may comprise GaP or GaN.

Abstract: A semi-conducting material being a non-oxide material or an already doped oxide material, wherein said material is doped with Manganese, Mn, and is ferromagnetic at least at one temperature in the range between room temperature and 500 K. Preferably, the Manganese doped material has a Manganese concentration at or below 5 at %.

Abstract: A method is provided for producing a doped dilute ferromagnetic semiconductor material, by doping Zinc Oxide in bulk form with manganese to a maximum level of 5 atomic percent concentration. The material is preferably sintered at a maximum temperature of 650° C. The result of this process is a semiconductor material comprising Mn-doped ZnO with a Mn concentration not exceeding 5 atomic percent, wherein the Mn-doped ZnO is ferromagnetic within at least a part of the temperature range from about 218 Kelvin to about 425 Kelvin.