Patents by Inventor Parmanand Sharma

Parmanand Sharma has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Alloy powder and magnetic component
    Patent number: 10388444
    Abstract: Alloy powder of a composition formula Fe100-a-b-c-d-e-fCoaBbSicPdCueCf having an amorphous phase as a main phase is provided. Parameters satisfy the following conditions: 3.5?a?4.5 at %, 6?b?15 at %, 2?c?11 at %, 3?d?5 at %, 0.5?e?1.1 at %, and 0?f?2 at %. With this composition, the alloy powder has good magnetic characteristics even when it has a large particle diameter such as 90 ?m. Therefore, yield thereof is improved.
    Type: Grant
    Filed: July 17, 2015
    Date of Patent: August 20, 2019
    Assignee: TOHOKU MAGNET INSTITUTE CO., LTD.
    Inventors: Akihiro Makino, Nobuyuki Nishiyama, Parmanand Sharma, Kana Takenaka
  • ALLOY POWDER AND MAGNETIC COMPONENT
    Publication number: 20170162308
    Abstract: Alloy powder of a composition formula Fe100-a-b-c-d-e-fCoaBbSicPdCueCf having an amorphous phase as a main phase is provided. Parameters satisfy the following conditions: 3.5?a?4.5 at %, 6?b?15 at %, 2?c?11 at %, 3?d?5 at %, 0.5?e?1.1 at %, and 0?f?2 at %. With this composition, the alloy powder has good magnetic characteristics even when it has a large particle diameter such as 90 ?m. Therefore, yield thereof is improved.
    Type: Application
    Filed: July 17, 2015
    Publication date: June 8, 2017
    Applicant: TOHOKU UNIVERSITY
    Inventors: Akihiro MAKINO, Nobuyuki NISHIYAMA, Parmanand SHARMA, Kana TAKENAKA
  • Ferromagnetic material
    Patent number: 7527983
    Abstract: A method is provided for producing a doped dilute ferromagnetic semiconductor material, by doping Zinc Oxide in bulk form with manganese to a maximum level of 5 atomic percent concentration. The material is preferably sintered at a maximum temperature of 650° C. The result of this process is a semiconductor material comprising Mn-doped ZnO with a Mn concentration not exceeding 5 atomic percent, wherein the Mn-doped ZnO is ferromagnetic within at least a part of the temperature range from about 218 Kelvin to about 425 Kelvin.
    Type: Grant
    Filed: February 6, 2004
    Date of Patent: May 5, 2009
    Assignee: Spintronix AB
    Inventors: Parmanand Sharma, Kudumboor Venkat Rao, Börje Johansson, Rajeev Ahuja
  • Copper Doped Magnetic Semiconductors
    Publication number: 20080087972
    Abstract: A semi-conducting material, a method for producing the material, and ways of implementing the material, wherein said material is doped with Cu or CuO, and is ferromagnetic at least at one temperature in the range between ?55° C. and 125° C. Typically the material may comprise GaP or GaN.
    Type: Application
    Filed: May 17, 2005
    Publication date: April 17, 2008
    Applicant: NM SPINTRONECS AB
    Inventors: Venkat Rao, Parmanand Sharma, Amita Gupta
  • Manganese Doped Magnetic Semiconductors
    Publication number: 20070190367
    Abstract: A semi-conducting material being a non-oxide material or an already doped oxide material, wherein said material is doped with Manganese, Mn, and is ferromagnetic at least at one temperature in the range between room temperature and 500 K. Preferably, the Manganese doped material has a Manganese concentration at or below 5 at %.
    Type: Application
    Filed: May 17, 2005
    Publication date: August 16, 2007
    Inventors: Venkat Rao, Parmanand Sharma, Amita Gupta
  • Ferromagnetic material
    Publication number: 20060148105
    Abstract: A method is provided for producing a doped dilute ferromagnetic semiconductor material, by doping Zinc Oxide in bulk form with manganese to a maximum level of 5 atomic percent concentration. The material is preferably sintered at a maximum temperature of 650° C. The result of this process is a semiconductor material comprising Mn-doped ZnO with a Mn concentration not exceeding 5 atomic percent, wherein the Mn-doped ZnO is ferromagnetic within at least a part of the temperature range from about 218 Kelvin to about 425 Kelvin.
    Type: Application
    Filed: February 6, 2004
    Publication date: July 6, 2006
    Applicant: NM Spintronics AB
    Inventors: Parmanand Sharma, Kudumboor Rao, Borje Johansson, Rajeev Ahuja