Abstract: Techniques and mechanisms for providing precisely fabricated structures of a semiconductor package. In an embodiment, a build-up carrier of the semiconductor package includes a layer of porous dielectric material. Seed copper and plated copper is disposed on the layer of porous dielectric material. Subsequent etching is performed to remove copper adjacent to the layer of porous dielectric material, forming a gap separating a suspended portion of a MEMS structure from the layer of porous dielectric material. In another embodiment, the semiconductor package includes a copper structure disposed between portions of an insulating layer or portions of a layer of silicon nitride material. The layer of silicon nitride material couples the insulating layer to another insulating layer. One or both of the insulating layers are each protected from desmear processing with a respective release layer structure.

Abstract: Techniques and mechanisms for providing precisely fabricated structures of a semiconductor package. In an embodiment, a build-up carrier of the semiconductor package includes a layer of porous dielectric material. Seed copper and plated copper is disposed on the layer of porous dielectric material. Subsequent etching is performed to remove copper adjacent to the layer of porous dielectric material, forming a gap separating a suspended portion of a MEMS structure from the layer of porous dielectric material. In another embodiment, the semiconductor package includes a copper structure disposed between portions of an insulating layer or portions of a layer of silicon nitride material. The layer of silicon nitride material couples the insulating layer to another insulating layer. One or both of the insulating layers are each protected from desmear processing with a respective release layer structure.

Abstract: The proposed slurry can be used to planarize polymeric candidate ILD materials such Benzocylobutene (BCB), SILK, Polyimide, etc. The slurry consists of colloidal suspension of nanoparticle abrasives made up of Tetraethylorthosilicate (TEOS)-derived silica and Zirconium-dioxide (ZrO2), its derivatives and any materials modified from ZrO2 and/or TEOS, in a chemically active medium. The base solution of the slurry consists of deionized (Dl) water, buffering agents like inorganic buffer comprised of inorganic acids such as TRIS-Hcl, its derivatives and variants, cleansing agents, surface modified catalysts, and surface reagents. The organic solvents like isopropyl alcohol, methanol, and other organic alcohols ranging from 0.0005 to 0.05% are employed for active dissolution of the chemical surface complex formed as a result of the slurry chemical action. The inorganic buffer is so chosen that the complex salts resulting from the reaction impart hydrophobicity to the polished thin film surface.