Abstract: A static random-access memory (SRAM) in an integrated circuit with circuitry for timing the enabling of sense amplifiers. The memory includes read/write SRAM cells, along with word-line tracking transistors arranged in one or more rows along a side of the read/write cells, and read-tracking transistors arranged in a column along a side of the read/write cells. A reference word line extends over the word-line tracking transistors, with its far end from the driver connected to pass transistors in the read-tracking transistors. The read-tracking transistors are preset to a known data state that, when accessed responsive to the reference word line, discharges a reference bit line, which in turn drives a sense amplifier enable signal.

Abstract: A memory configurable to be used in an RTA mode includes an input latch configured to receive an input address bus and to generate a latched address bus that corresponds to a memory location. An address flop is configured to save the latched address and to generate a flopped address. A first block address pre-decoder stage is configured to generate a pre-decoded latched address to an RTA generation logic in response to the latched address bus; and a second block address pre-decoder configured to generate a pre-decoded flopped address to the RTA generation logic in response to the flopped address. The RTA generation logic generates an RTA enable signal one clock cycle before a memory block access, to activate a memory block corresponding to the memory location, such that an array supply voltage of the memory block starts charging one clock cycle before a memory block access.

Abstract: A memory configurable to be used in an RTA mode includes an input latch configured to receive an input address bus and to generate a latched address bus that corresponds to a memory location. An address flop is configured to save the latched address and to generate a flopped address. A first block address pre-decoder stage is configured to generate a pre-decoded latched address to an RTA generation logic in response to the latched address bus; and a second block address pre-decoder configured to generate a pre-decoded flopped address to the RTA generation logic in response to the flopped address. The RTA generation logic generates an RTA enable signal one clock cycle before a memory block access, to activate a memory block corresponding to the memory location, such that an array supply voltage of the memory block starts charging one clock cycle before a memory block access.

Abstract: A static random-access memory (SRAM) in an integrated circuit with circuitry for timing the enabling of sense amplifiers. The memory includes read/write SRAM cells, along with word-line tracking transistors arranged in one or more rows along a side of the read/write cells, and read-tracking transistors arranged in a column along a side of the read/write cells. A reference word line extends over the word-line tracking transistors, with its far end from the driver connected to pass transistors in the read-tracking transistors. The read-tracking transistors are preset to a known data state that, when accessed responsive to the reference word line, discharges a reference bit line, which in turn drives a sense amplifier enable signal.

Abstract: A method, system, and apparatus to a selectable drive strength high frequency crystal oscillator circuit are disclosed. In one embodiment, a system includes a crystal oscillator circuit to generate a signal with a specified frequency value, and a programmable amplifier circuit containing a plurality of programmable inverting amplifiers, and wherein certain ones of a plurality of inverting amplifiers are operated to change a gain and/or a bandwidth of the signal according to the specified frequency value of the crystal oscillator circuit. The system may include further comprising a resistor circuit coupled in parallel to the programmable amplifier circuit to set an operating point of the programmable amplifier circuit.