Patents by Inventor Pary Baluswamy
Pary Baluswamy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8323859Abstract: Photolithographic apparatus, systems, and methods that make use of optical compensation devices are disclosed. In various embodiments, an imaging mask includes an optically transmissive substrate. A first patterned region is formed on the substrate, and a second patterned region is formed on the substrate that is proximate to the first patterned region, the first patterned region and the second patterned region each having a plurality of optically transmissive and optically attenuating regions formed on the mask. An optical compensation region is positioned proximate to at least one of the first patterned region and the second patterned region that is configured to change a phase of the illumination radiation incident on the at least one of the first patterned region and the second region by altering an optical property of the substrate.Type: GrantFiled: November 18, 2011Date of Patent: December 4, 2012Assignee: Micron Technology, Inc.Inventors: Xinya Lei, Fei Wang, Pary Baluswamy
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Publication number: 20120064439Abstract: Photolithographic apparatus, systems, and methods that make use of optical compensation devices are disclosed. In various embodiments, an imaging mask includes an optically transmissive substrate. A first patterned region is formed on the substrate, and a second patterned region is formed on the substrate that is proximate to the first patterned region, the first patterned region and the second patterned region each having a plurality of optically transmissive and optically attenuating regions formed on the mask. An optical compensation region is positioned proximate to at least one of the first patterned region and the second patterned region that is configured to change a phase of the illumination radiation incident on the at least one of the first patterned region and the second region by altering an optical property of the substrate.Type: ApplicationFiled: November 18, 2011Publication date: March 15, 2012Inventors: Xinya Lei, Fei Wang, Pary Baluswamy
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Patent number: 8062814Abstract: Photolithographic apparatus, systems, and methods that make use of optical compensation devices are disclosed. In various embodiments, an imaging mask includes an optically transmissive substrate. A first patterned region is formed on the substrate, and a second patterned region is formed on the substrate that is proximate to the first patterned region, the first patterned region and the second patterned region each having a plurality of optically transmissive and optically attenuating regions formed on the mask. An optical compensation region is positioned proximate to at least one of the first patterned region and the second patterned region that is configured to change a phase of the illumination radiation incident on the at least one of the first patterned region and the second region by altering an optical property of the substrate.Type: GrantFiled: August 31, 2010Date of Patent: November 22, 2011Assignee: Micron Technology, Inc.Inventors: Xinya Lei, Fei Wang, Pary Baluswamy
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Patent number: 7862964Abstract: The invention includes methods for photo-processing photo-imageable material. Locations of the photo-imageable material where flare hot spots are expected to occur are ascertained. A substantially uniform dose of light intensity is provided to at least the majority of the photo-imageable material other than the hot spot locations, and is not provided to the hot spot locations. The provision of the substantially uniform dose of light intensity can occur during formation of a primary pattern in the photo-imageable material with a reticle, utilizing the same reticle as that used for making the primary pattern; or can occur at a separate processing stage than that utilized for forming the primary pattern and with a separate reticle from that utilized to form the primary pattern. The invention also includes reticle constructions which can be utilized for photo-processing of photo-imageable material.Type: GrantFiled: June 22, 2010Date of Patent: January 4, 2011Assignee: Micron Technology, Inc.Inventor: Pary Baluswamy
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Publication number: 20100323283Abstract: Photolithographic apparatus, systems, and methods that make use of optical compensation devices are disclosed. In various embodiments, an imaging mask includes an optically transmissive substrate. A first patterned region is formed on the substrate, and a second patterned region is formed on the substrate that is proximate to the first patterned region, the first patterned region and the second patterned region each having a plurality of optically transmissive and optically attenuating regions formed on the mask. An optical compensation region is positioned proximate to at least one of the first patterned region and the second patterned region that is configured to change a phase of the illumination radiation incident on the at least one of the first patterned region and the second region by altering an optical property of the substrate.Type: ApplicationFiled: August 31, 2010Publication date: December 23, 2010Inventors: Xinya Lei, Fei Wang, Pary Baluswamy
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Publication number: 20100261107Abstract: The invention includes methods for photo-processing photo-imageable material. Locations of the photo-imageable material where flare hot spots are expected to occur are ascertained. A substantially uniform dose of light intensity is provided to at least the majority of the photo-imageable material other than the hot spot locations, and is not provided to the hot spot locations. The provision of the substantially uniform dose of light intensity can occur during formation of a primary pattern in the photo-imageable material with a reticle, utilizing the same reticle as that used for making the primary pattern; or can occur at a separate processing stage than that utilized for forming the primary pattern and with a separate reticle from that utilized to form the primary pattern. The invention also includes reticle constructions which can be utilized for photo-processing of photo-imageable material.Type: ApplicationFiled: June 22, 2010Publication date: October 14, 2010Applicant: MICRON TECHNOLOGY, INC.Inventor: Pary Baluswamy
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Patent number: 7790338Abstract: Photolithographic apparatus, systems, and methods that make use of optical compensation devices are disclosed. In various embodiments, an imaging mask includes an optically transmissive substrate. A first patterned region is formed on the substrate, and a second patterned region is formed on the substrate that is proximate to the first patterned region, the first patterned region and the second patterned region each having a plurality of optically transmissive and optically attenuating regions formed on the mask. An optical compensation region is positioned proximate to at least one of the first patterned region and the second patterned region that is configured to change a phase of the illumination radiation incident on the at least one of the first patterned region and the second region by altering an optical property of the substrate.Type: GrantFiled: May 16, 2007Date of Patent: September 7, 2010Assignee: Micron Technology, Inc.Inventors: Xinya Lei, Fei Wang, Pary Baluswamy
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Patent number: 7767363Abstract: The invention includes methods for photo-processing photo-imageable material. Locations of the photo-imageable material where flare hot spots are expected to occur are ascertained. A substantially uniform dose of light intensity is provided to at least the majority of the photo-imageable material other than the hot spot locations, and is not provided to the hot spot locations. The provision of the substantially uniform dose of light intensity can occur during formation of a primary pattern in the photo-imageable material with a reticle, utilizing the same reticle as that used for making the primary pattern; or can occur at a separate processing stage than that utilized for forming the primary pattern and with a separate reticle from that utilized to form the primary pattern. The invention also includes reticle constructions which can be utilized for photo-processing of photo-imageable material.Type: GrantFiled: June 24, 2005Date of Patent: August 3, 2010Assignee: Micron Technology, Inc.Inventor: Pary Baluswamy
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Patent number: 7655384Abstract: Methods to at least partially compensate for photoresist-induced spherical aberration that occurs during mask imaging used for photolithographic processing of semiconductor devices, LCD elements, thin-film magnetic heads, reticles and other substrates including photo-defined structures thereon are disclosed. A photoresist or other photosensitive material may be irradiated with a mask pattern image including a selected nonzero spherical aberration value to compensate for photoresist-induced spherical aberration.Type: GrantFiled: September 5, 2006Date of Patent: February 2, 2010Assignee: Micron Technology, Inc.Inventor: Pary Baluswamy
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Publication number: 20080284996Abstract: Photolithographic apparatus, systems, and methods that make use of optical compensation devices are disclosed. In various embodiments, an imaging mask includes an optically transmissive substrate. A first patterned region is formed on the substrate, and a second patterned region is formed on the substrate that is proximate to the first patterned region, the first patterned region and the second patterned region each having a plurality of optically transmissive and optically attenuating regions formed on the mask. An optical compensation region is positioned proximate to at least one of the first patterned region and the second patterned region that is configured to change a phase of the illumination radiation incident on the at least one of the first patterned region and the second region by altering an optical property of the substrate.Type: ApplicationFiled: May 16, 2007Publication date: November 20, 2008Inventors: Xinya Lei, Fei Wang, Pary Baluswamy
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Patent number: 7268869Abstract: An in-situ spectrograph having a spectrometer module positioned at a reticle plane or at a wafer plane of a photolithography projection system is disclosed. The spectrometer module disperses light projected from an illumination source, and the produced spectrum may be recorded. The spectrum may be recorded using a photodetector or a layer of photoresist. The recorded spectrums produced by illumination sources of a plurality of steppers may be compared, thus providing a comparison of the wavelength characteristics, particularly the wavelength spread and intensity of the light of the illumination sources. A plurality of spectrometer modules may be used to provide a comparison of the central wavelength of light produced by the illumination sources. The absolute wavelength of light produced by an illumination source may be determined using a spectrometer module having a spectrometer grating.Type: GrantFiled: August 13, 2004Date of Patent: September 11, 2007Assignee: Micron Technology, Inc.Inventor: Pary Baluswamy
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Patent number: 7223674Abstract: Disclosed herein are methods for forming photolithography alignment markers on the back side of a substrate, such as a crystalline silicon substrate used in the manufacture of semiconductor integrated circuits. According to the disclosed techniques, laser radiation is used to remove the material (e.g., silicon) from the back side of a substrate to form the back side alignment markers at specified areas. Such removal can comprise the use of laser ablation or laser-assisted etching. The substrate is placed on a motor-controlled substrate holding mechanism in a laser removal chamber, and the areas are automatically moved underneath the laser radiation to removal the material. The substrate holding mechanism can comprise a standard chuck (in which case use of a protective layer on the front side of the substrate is preferred), or a substrate clamping assembly which suspends the substrate at its edges (in which case the protective layer is not necessary).Type: GrantFiled: May 6, 2004Date of Patent: May 29, 2007Assignee: Micron Technology, Inc.Inventors: Pary Baluswamy, Peter Benson
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Publication number: 20070002312Abstract: Methods to at least partially compensate for photoresist-induced spherical aberration that occurs during mask imaging used for photolithographic processing of semiconductor devices, LCD elements, thin-film magnetic heads, reticles and other substrates including photo-defined structures thereon. A photoresist or other photosensitive material may be irradiated with a mask pattern image including a selected nonzero spherical aberration value to compensate for photoresist-induced spherical aberration.Type: ApplicationFiled: September 5, 2006Publication date: January 4, 2007Inventor: Pary Baluswamy
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Publication number: 20060292456Abstract: The invention includes methods for photo-processing photo-imageable material. Locations of the photo-imageable material where flare hot spots are expected to occur are ascertained. A substantially uniform dose of light intensity is provided to at least the majority of the photo-imageable material other than the hot spot locations, and is not provided to the hot spot locations. The provision of the substantially uniform dose of light intensity can occur during formation of a primary pattern in the photo-imageable material with a reticle, utilizing the same reticle as that used for making the primary pattern; or can occur at a separate processing stage than that utilized for forming the primary pattern and with a separate reticle from that utilized to form the primary pattern. The invention also includes reticle constructions which can be utilized for photo-processing of photo-imageable material.Type: ApplicationFiled: June 24, 2005Publication date: December 28, 2006Inventor: Pary Baluswamy
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Publication number: 20060226118Abstract: Disclosed herein are methods for forming photolithography alignment markers on the back side of a substrate, such as a crystalline silicon substrate used in the manufacture of semiconductor integrated circuits. According to the disclosed techniques, laser radiation is used to remove the material (e.g., silicon) from the back side of a substrate to form the back side alignment markers at specified areas. Such removal can comprise the use of laser ablation or laser-assisted etching. The substrate is placed on a motor-controlled substrate holding mechanism in a laser removal chamber, and the areas are automatically moved underneath the laser radiation to removal the material. The substrate holding mechanism can comprise a standard chuck (in which case use of a protective layer on the front side of the substrate is preferred), or a substrate clamping assembly which suspends the substrate at its edges (in which case the protective layer is not necessary).Type: ApplicationFiled: June 7, 2006Publication date: October 12, 2006Inventors: Pary Baluswamy, Peter Benson
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Patent number: 7105278Abstract: A semiconductor pattern mask that might otherwise exhibit three-fold symmetry, which could give rise to distorted semiconductor features in the presence of three-leaf aberration in the optical system used to expose a semiconductor wafer through the mask, is altered to break up the three-fold symmetry without altering the semiconductor features that are formed. This accomplished by adding features to the mask that break up the symmetry. One way of achieving that result is to make the added features of “sub-resolution” size that do not produce features on the exposed wafer. Another way of achieving that result is to change existing features that do form structures in such a way (e.g., with optical elements) that changes the relative phase, amplitude or other characteristic of light transmitted through those features.Type: GrantFiled: July 23, 2004Date of Patent: September 12, 2006Assignee: Micron Technology, Inc.Inventors: Pary Baluswamy, William A. Stanton, William J. Baggenstoss
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Publication number: 20060093927Abstract: A semiconductor pattern mask that might otherwise exhibit three-fold symmetry, which could give rise to distorted semiconductor features in the presence of three-leaf aberration in the optical system used to expose a semiconductor wafer through the mask, is altered to break up the three-fold symmetry without altering the semiconductor features that are formed. This accomplished by adding features to the mask that break up the symmetry. One way of achieving that result is to make the added features of “sub-resolution” size that do not produce features on the exposed wafer. Another way of achieving that result is to change existing features that do form structures in such a way (e.g., with optical elements) that changes the relative phase, amplitude or other characteristic of light transmitted through those features.Type: ApplicationFiled: December 19, 2005Publication date: May 4, 2006Inventors: Pary Baluswamy, William Stanton, William Baggenstoss
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Publication number: 20060033912Abstract: An in-situ spectrograph having a spectrometer module positioned at a reticle plane or at a wafer plane of a photolithography projection system is disclosed. The spectrometer module disperses light projected from an illumination source, and the produced spectrum may be recorded. The spectrum may be recorded using a photodetector or a layer of photoresist. The recorded spectrums produced by illumination sources of a plurality of steppers may be compared, thus providing a comparison of the wavelength characteristics, particularly the wavelength spread and intensity of the light of the illumination sources. A plurality of spectrometer modules may be used to provide a comparison of the central wavelength of light produced by the illumination sources. The absolute wavelength of light produced by an illumination source may be determined using a spectrometer module having a spectrometer grating.Type: ApplicationFiled: August 13, 2004Publication date: February 16, 2006Inventor: Pary Baluswamy
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Publication number: 20060017074Abstract: The present invention includes a residue-free overlay target, as well as a method of forming a residue-free overlay target. The residue-free overlay target of the present invention is defined by trenches or pads including a series of raised lines. The raised lines included in the overlay target of the present invention substantially eliminate any surface topography, such as depressions, at the top surface of overlying material layers and, thereby, prevent accumulation of process residue which may obscure the overlay target and inhibit further processing. The method of the present invention may be accomplished and modified using process technology known in the semiconductor fabrication art and includes providing a semiconductor substrate, depositing a resist layer, patterning the resist, and executing a wet or dry etch to create at least one overlay target according to the present invention.Type: ApplicationFiled: September 1, 2005Publication date: January 26, 2006Inventors: Pary Baluswamy, Scott DeBoer, Ceredig Roberts, Tim Bossart
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Publication number: 20050250292Abstract: Disclosed herein are methods for forming photolithography alignment markers on the back side of a substrate, such as a crystalline silicon substrate used in the manufacture of semiconductor integrated circuits. According to the disclosed techniques, laser radiation is used to remove the material (e.g., silicon) from the back side of a substrate to form the back side alignment markers at specified areas. Such removal can comprise the use of laser ablation or laser-assisted etching. The substrate is placed on a motor-controlled substrate holding mechanism in a laser removal chamber, and the areas are automatically moved underneath the laser radiation to removal the material. The substrate holding mechanism can comprise a standard chuck (in which case use of a protective layer on the front side of the substrate is preferred), or a substrate clamping assembly which suspends the substrate at its edges (in which case the protective layer is not necessary).Type: ApplicationFiled: May 6, 2004Publication date: November 10, 2005Inventors: Pary Baluswamy, Peter Benson