Patents by Inventor Pascal Ancey
Pascal Ancey has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 7586391Abstract: A switchable filter may include a first acoustic resonator including first electrodes, and a first resonant layer between the first electrodes and having electrostrictive material. The switchable filter may further include a second acoustic resonator including second electrodes, and a second resonant layer between the second electrodes and having electrostrictive material. The second acoustic resonator may be acoustically coupled with the first acoustic resonator. At least one of the first electrodes and at least one of the second electrodes may be arranged between the first resonant layer and the second resonant layer. The electrostrictive material may adjust a resonance and a filter switching of the first and second acoustic resonators as a function of a control voltage applied to terminals of the first and second acoustic resonators. Two electrodes from one of the first electrodes and the second electrodes may be filter input electrodes.Type: GrantFiled: August 27, 2007Date of Patent: September 8, 2009Assignee: STMicroelectronics SAInventors: Alexandre Volatier, Pascal Ancey, Bertrand Dubus
-
Patent number: 7565725Abstract: A method for forming a variable capacitor including a conductive strip covering the inside of a cavity, and a flexible conductive membrane placed above the cavity, the cavity being formed according to the steps of: forming a recess in the substrate; placing a malleable material in the recess; having a stamp bear against the substrate at the level of the recess to give the upper part of the malleable material a desired shape; hardening the malleable material; and removing the stamp.Type: GrantFiled: August 30, 2006Date of Patent: July 28, 2009Assignees: STMicroeectronics S.A., Commissariat a l'energie AtomiqueInventors: Guillaume Bouche, Fabrice Casset, Pascal Ancey
-
Patent number: 7550900Abstract: Acoustic resonator device (1) includes an active element (6) and a support provided with a membrane (5). The active element (6) is provided with at least one piezoelectric layer (10) and is surmounted by a multilayer stack (12). The multilayer stack (12) is provided with at least three layers, including at least one layer (15) of high acoustic impedance and at least one layer (13) of low acoustic impedance. An integrated circuit including at least one such acoustic resonator device is also disclosed.Type: GrantFiled: December 10, 2004Date of Patent: June 23, 2009Assignee: STMicroelectronics SAInventors: Guillaume Bouche, Gregory Caruyer, Pascal Ancey
-
Publication number: 20090152998Abstract: A microresonator comprising a single-crystal silicon resonant element and at least one activation electrode placed close to the resonant element, in which the resonant element is placed in an opening of a semiconductor layer covering a substrate, the activation electrode being formed in the semiconductor layer and being level at the opening.Type: ApplicationFiled: November 6, 2008Publication date: June 18, 2009Applicants: STMicroelectronics (Crolles) 2 SAS, STMicroelectronics S.A., Commissariat A L'energie AtomiqueInventors: Nicolas Abele, Pascal Ancey, Alexandre Talbot, Karim Segueni, Guillaume Bouche, Thomas Skotnicki, Stephane Monfray, Fabrice Cassett
-
Publication number: 20090140384Abstract: A thin soft magnetic film combines a high magnetization with an insulating character. The film is formed by nitriding Fe-rich ferromagnetic nanograins immersed in an amorphous substrate. A selective oxidation of the amorphous substrate is then performed. The result is a thin, insulating, soft magnetic film of high magnetization. Many types of integrated circuits can be made which include a component using a membrane incorporating the above-mentioned thin film.Type: ApplicationFiled: February 9, 2009Publication date: June 4, 2009Applicants: STMicroelectronics S.A., Commissariat a L'Energie Atomique Batiment LE PONAND DInventors: Guillaume Bouche, Pascal Ancey, Bernard Viala, Sandrine Couderc
-
Patent number: 7504007Abstract: A thin soft magnetic film combines a high magnetization with an insulating character. The film is formed by nitriding Fe-rich ferromagnetic nanograins immersed in an amorphous substrate. A selective oxidation of the amorphous substrate is then performed. The result is a thin, insulating, soft magnetic film of high magnetization. Many types of integrated circuits can be made which include a component using a membrane incorporating the above-mentioned thin film.Type: GrantFiled: July 25, 2005Date of Patent: March 17, 2009Assignees: STMicroelectronics S.A., Commissariat a L'Energie AtomiqueInventors: Guillaume Bouche, Pascal Ancey, Bernard Viala, Sandrine Couderc
-
Publication number: 20080297292Abstract: A radiofrequency device may include an electrically conducting element associated with at least one continuous magnetic element. The first continuous magnetic element may include a substrate coated with a magnetic film having a granular structure, with grains that are inclined to the normal to the substrate, or a columnar texture inclined to the normal of the substrate.Type: ApplicationFiled: July 19, 2006Publication date: December 4, 2008Inventors: Bernard Viala, Sandrine Couderc, Pascal Ancey
-
Publication number: 20080283373Abstract: The invention relates to a device consisting of an electromechanical microswitch comprising mobile beam (2). According to the invention, at least part (14) of the beam forms the piezoelectric element of a piezoelectric actuator.Type: ApplicationFiled: June 13, 2005Publication date: November 20, 2008Applicant: STMicroelectronics S.A.Inventors: Grégory Caruyer, Guillaume Bouche, Pascal Ancey
-
Patent number: 7391142Abstract: A support 7 for an acoustic resonator 4 includes at least one bilayer assembly having a layer of high acoustic impedance material 11 and a layer of low acoustic impedance material 12 made of material having a low electrical permittivity.Type: GrantFiled: November 27, 2003Date of Patent: June 24, 2008Assignee: STMicroelectronics S.A.Inventors: Guillaume Bouche, Gregory Caruyer, Pascal Ancey
-
Patent number: 7391143Abstract: An acoustic resonator assembly includes a layer of high-acoustic-impedance material and a layer of low-acoustic-impedance material made of a low-electrical-permittivity material. This assembly may support the resonator over an interconnect layer or act as a decoupling assembly between two active elements of the resonator. The assembly may alternatively include three low-acoustic impedance layers. Alternatively, the assembly may include three acoustic impedance layers wherein two of the layers are low acoustic impedance layers and the third layer has a higher acoustic impedance than the first two or alternatively is a high-acoustic impedance layer.Type: GrantFiled: April 2, 2007Date of Patent: June 24, 2008Assignee: STMicroelectronics S.A.Inventors: Guillaume Bouche, Gregory Caruyer, Pascal Ancey
-
Publication number: 20080129416Abstract: A switchable filter may include a first acoustic resonator including first electrodes, and a first resonant layer between the first electrodes and having electrostrictive material. The switchable filter may further include a second acoustic resonator including second electrodes, and a second resonant layer between the second electrodes and having electrostrictive material. The second acoustic resonator may be acoustically coupled with the first acoustic resonator. At least one of the first electrodes and at least one of the second electrodes may be arranged between the first resonant layer and the second resonant layer. The electrostrictive material may adjust a resonance and a filter switching of the first and second acoustic resonators as a function of a control voltage applied to terminals of the first and second acoustic resonators. Two electrodes from one of the first electrodes and the second electrodes may be filter input electrodes.Type: ApplicationFiled: August 27, 2007Publication date: June 5, 2008Applicant: STMicroelectronics SAInventors: Alexandre VOLATIER, Pascal Ancey, Bertrand Dubus
-
Publication number: 20080076211Abstract: Method for making an electromechanical component on a plane substrate and comprising at least one structure vibrating in the plane of the substrate and actuation electrodes. The method comprises at least the following steps in sequence: formation of the substrate comprising one silicon area partly covered by two insulating areas, formation of a sacrificial silicon and germanium alloy layer by selective epitaxy starting from the uncovered part of the silicon area, formation of a strongly doped silicon layer by epitaxy, comprising a monocrystalline area arranged on said sacrificial layer and two polycrystalline areas arranged on insulating areas, simultaneous formation of the vibrating structure and actuation electrodes, by etching of a predetermined pattern in the monocrystalline area designed to form spaces between the electrodes and the vibrating structure, elimination of said sacrificial silicon and germanium alloy layer by selective etching.Type: ApplicationFiled: September 27, 2007Publication date: March 27, 2008Applicants: COMMISSARIAT A L'ENERGIE ATOMIQUE, STMICROELECTRONICS SAInventors: Fabrice Casset, Cedric Durand, Pascal Ancey
-
Publication number: 20080048804Abstract: A coupled Lamb wave resonator filter includes first and second Lamb wave resonators. The first Lamb wave resonator includes a first resonant layer, and first and second electrodes on opposite sides of the first resonant layer. The second Lamb wave resonator includes a second resonant layer, and third and fourth electrodes on opposite sides of the second resonant layer. One of the sides of the first resonant layer belongs to a plane parallel to a plane corresponding to one of the sides of the second resonant layer. Both planes pass through the third and fourth electrodes of the second Lamb wave resonator. A periodic lattice acoustically couples the first and second resonant layers.Type: ApplicationFiled: August 27, 2007Publication date: February 28, 2008Applicant: STMicroelectronics SAInventors: Alexandre Volatier, Pascal Ancey, Bertrand Dubus
-
Patent number: 7310029Abstract: The resonator comprises a piezoelectric layer arranged between two electrodes. An electrical heating resistor is arranged in thermal contact with at least one of the electrodes. Temporary heating of the electrode enables the material constituting the electrode to be partially evaporated, so as to thin the electrode and thus adjust the resonance frequency. Measurement of the resonance frequency in the course of evaporation enables the heating to be interrupted when the required resonance frequency is obtained. One of the electrodes can be arranged on a substrate formed by an acoustic Bragg grating. The resonator can comprise a substrate comprising a cavity whereon one of the electrodes is at least partially arranged.Type: GrantFiled: July 6, 2004Date of Patent: December 18, 2007Assignees: Commissariat a l'energie Atomique, ST Microelectronics SAInventors: Philippe Robert, Pascal Ancey, Grégory Caruyer
-
Patent number: 7304358Abstract: A MOS transistor with a deformable gate formed in a semiconductor substrate, including source and drain areas separated by a channel area extending in a first direction from the source to the drain and in a second direction perpendicular to the first one, a conductive gate beam placed at least above the channel area extending in the second direction between bearing points placed on the substrate on each side of the channel area, and such that the surface of the channel area is hollow and has a shape similar to that of the gate beam when said beam is in maximum deflection towards the channel area.Type: GrantFiled: September 15, 2005Date of Patent: December 4, 2007Assignees: STMicroelectronics S.A., Commissariat a l'Energie AtomiqueInventors: Pascal Ancey, Nicolas Abele, Fabrice Casset
-
Patent number: 7259649Abstract: A switchable inductance that can be formed in an integrated circuit, including a spiral interrupted between two first points connected to two terminals via two metallizations running one above the other, one of the two metallizations being deformable; a hollowing between the two metallizations; and a switching device capable of deforming the deformable metallization to separate or to put in contact said two metallizations.Type: GrantFiled: July 30, 2004Date of Patent: August 21, 2007Assignee: STMicroelectronics S.A.Inventors: Pascal Ancey, Daniel Saias
-
Publication number: 20070182284Abstract: An acoustic resonator assembly includes a layer of high-acoustic-impedance material and a layer of low-acoustic-impedance material made of a low-electrical-permittivity material. This assembly may support the resonator over an interconnect layer or act as a decoupling assembly between two active elements of the resonator. The assembly may alternatively include three low-acoustic impedance layers. Alternatively, the assembly may include three acoustic impedance layers wherein two of the layers are low acoustic impedance layers and the third layer has a higher acoustic impedance than the first two or alternatively is a high-acoustic impedance layer.Type: ApplicationFiled: April 2, 2007Publication date: August 9, 2007Inventors: Guillaume Bouche, Gregory Caruyer, Pascal Ancey
-
Publication number: 20070087513Abstract: A method for forming a variable capacitor including a conductive strip covering the inside of a cavity, and a flexible conductive membrane placed above the cavity, the cavity being formed according to the steps of: forming a recess in the substrate; placing a malleable material in the recess; having a stamp bear against the substrate at the level of the recess to give the upper part of the malleable material a desired shape; hardening the malleable material; and removing the stamp.Type: ApplicationFiled: August 30, 2006Publication date: April 19, 2007Applicants: STMicroelectronics S.A., Commissariat A L'energie AtomiqueInventors: Guillaume Bouche, Fabrice Casset, Pascal Ancey
-
Patent number: 7196451Abstract: An electromechanical resonator includes a monocrystalline-silicon substrate (S) provided with an active zone (ZA) delimited by an insulating region, a vibrating beam (10) anchored by at least one of its free ends on the insulating region and including a monocrystalline-silicon vibrating central part (12), and a control electrode (E) arranged above the beam and bearing on the active zone. The central part (12) of the beam is separated from the active zone (ZA) and from the control electrode (E).Type: GrantFiled: July 21, 2004Date of Patent: March 27, 2007Assignee: STMicroelectronics SAInventors: Stephane Monfray, Pascal Ancey, Thomas Skotnicki, Karim Segueni
-
Patent number: 7180224Abstract: An electronic component (1) includes a substrate (2) and at least two piezoelectric resonators (3, 4) each having an active element (6, 9), a lower electrode (5, 8) and an upper electrode (7, 10). The lower electrode (5) of the first resonator (3) is made of a material that is different from that of the lower electrode (8) of the second resonator (4) such that the resonators exhibit different resonance frequencies.Type: GrantFiled: April 1, 2004Date of Patent: February 20, 2007Assignee: STMicroelectronics S.A.Inventors: Guillaume Bouche, Nick Smears, Pascal Ancey, Gregory Caruyer