Abstract: An integrated circuit device is disclosed, the device comprising a protective layer and a protected circuit on a substrate, the protective layer being configured to protect the protected circuit by absorbing laser radiation targeted at the protected circuit through the substrate. The device may be configured such that removal of the protective layer causes physical damage that disables the protected circuit. The device may comprise intermediate circuitry protruding into the substrate between the protective layer and the protected circuit, wherein the physical damage that disables the protected circuit is physical damage to the intermediate circuitry. The device may comprise detection circuitry configured to detect a change in an electrical property of the device indicative of removal of the protective layer, and, in response to detecting the change in the electrical property, cause the protected circuit to be disabled.

Abstract: An integrated circuit device includes a semiconductor substrate layer and at least one active layer including electronic components and supported by the semiconductor substrate layer. The semiconductor substrate layer and the at least one active layer are sandwiched between two protective layers acting as physical obstacles to prevent the passage of radiations. In addition, the two protective layers are electrically connected to a detection circuit that can monitor an electrical information of the protective layers and detect a physical attack of at least one of the two protective layers, based on the monitored electrical information.

Abstract: An integrated circuit device is disclosed, the device comprising a protective layer and a protected circuit on a substrate, the protective layer being configured to protect the protected circuit by absorbing laser radiation targeted at the protected circuit through the substrate. The device may be configured such that removal of the protective layer causes physical damage that disables the protected circuit. The device may comprise intermediate circuitry protruding into the substrate between the protective layer and the protected circuit, wherein the physical damage that disables the protected circuit is physical damage to the intermediate circuitry. The device may comprise detection circuitry configured to detect a change in an electrical property of the device indicative of removal of the protective layer, and, in response to detecting the change in the electrical property, cause the protected circuit to be disabled.

Abstract: Steel material whose constituent grains comprise a matrix in which precipitates are incorporated, the precipitates comprising at least one metallic element selected from a metallic element M, a metallic element M?, a metallic element M? or mixtures thereof; the microstructure of the steel being such that the grains are equiaxed and the average grain size being such that the average of their largest dimension “Dmax” and/or the average of their smallest dimension “Dmin” is comprised between 10 ?m and 50 ?m. The steel material has optimized, stable and isotropic mechanical properties, in particular so that the steel material can best withstand mechanical and/or thermal stresses.

Abstract: A chip includes a substrate having a first surface and a second surface opposite the first surface, and an integrated circuit mounted on a landing zone on the first surface of the substrate. The chip also includes contacts provided about the first surface in the peripheral region, and wire-bonds providing electrical connections between the integrated circuit and the contacts. The chip further includes solder ball connections provided in the peripheral region on the second surface, and connections provided in the substrate for connecting the electrical contacts on the first surface with the solder ball connections on the second surface. The substrate includes at least one conductive track routed through the landing zone region of the substrate, and the chip is configured such that an alteration in the at least one conductive track prevents operation of the integrated circuit.

Abstract: Part comprising a steel material whose constituent grains comprise a matrix in which precipitates are incorporated, the precipitates comprising at least one metallic element selected from a metallic element M, a metallic element M?, a metallic element M? or mixtures thereof; the microstructure of the steel being such that the grains are equiaxed and the average grain size being such that the average of their largest dimension “D max” and/or the average of their smallest dimension “D min” is comprised between 10 ?m and 50 ?m. The steel material has optimised, stable and isotropic mechanical properties, in particular so that the steel material can best withstand mechanical and/or thermal stresses.

Abstract: Process for the manufacture of a steel material, wherein the grains of which it is composed comprise a matrix into which precipitates are incorporated, the precipitates comprising at least one metallic element selected from a metallic element M, a metallic element M?, a metallic element M? or mixtures thereof; the microstructure of the steel being such that the grains are equiaxial and the average size of the grains being such that the average of their largest dimension “Dmax” and/or the average of their smallest dimension “Dmin” is in the range 10 ?m to 50 ?m. The steel material has optimised, stable and isotropic mechanical properties, in particular so that the steel material is more resistant to mechanical and/or thermal stresses.

Abstract: Process for the treatment of a steel material, wherein the grains of which it is composed comprise a matrix into which precipitates are incorporated, the precipitates comprising at least one metallic element selected from a metallic element M, a metallic element M?, a metallic element M? or mixtures thereof; the microstructure of the steel being such that the grains are equiaxial and the average size of the grains being such that the average of their largest dimension “Dmax” and/or the average of their smallest dimension “Dmin” is in the range 10 ?m to 50 ?m. The steel material has optimised, stable and isotropic mechanical properties, in particular so that the steel material is more resistant to mechanical and/or thermal stresses.

Abstract: Steel material whose constituent grains comprise a matrix in which precipitates are incorporated, the precipitates comprising at least one metallic element selected from a metallic element M, a metallic element M?, a metallic element M? or mixtures thereof; the microstructure of the steel being such that the grains are equiaxed and the average grain size being such that the average of their largest dimension “Dmax” and/or the average of their smallest dimension “Dmin” is comprised between 10 ?m and 50 ?m. The steel material has optimized, stable and isotropic mechanical properties, in particular so that the steel material can best withstand mechanical and/or thermal stresses.

Abstract: An integrated circuit device is disclosed, the device comprising a protective layer and a protected circuit on a substrate, the protective layer being configured to protect the protected circuit by absorbing laser radiation targeted at the protected circuit through the substrate. The device may be configured such that removal of the protective layer causes physical damage that disables the protected circuit. The device may comprise intermediate circuitry protruding into the substrate between the protective layer and the protected circuit, wherein the physical damage that disables the protected circuit is physical damage to the intermediate circuitry. The device may comprise detection circuitry configured to detect a change in an electrical property of the device indicative of removal of the protective layer, and, in response to detecting the change in the electrical property, cause the protected circuit to be disabled.

Abstract: An integrated circuit chip and a method for protecting the integrated circuit chip against physical and/or electrical alterations are disclosed. The chip comprises at least one semiconductor layer including semiconductor components and conductive tracks, at least one layer formed by a first type of conductive tracks extending over all or part of a surface of the chip and at least one second type of conductive track connected to at least one detection circuit configured to detect an alteration of the at least one second type of conductive track. The chip is characterized in that the at least one first type of conductive track is mixed within the at least one second type of conductive track, the material and the layout of at least one second type of conductive track being indiscernible, by an observation device, from the material and the layout of the at least one first type of conductive track.

Abstract: An integrated circuit chip and a method for protecting the integrated circuit chip against physical and/or electrical alterations are disclosed. The chip comprises at least one semiconductor layer including semiconductor components and conductive tracks, at least one layer formed by a first type of conductive tracks extending over all or part of a surface of the chip and at least one second type of conductive track connected to at least one detection circuit configured to detect an alteration of the at least one second type of conductive track. The chip is characterized in that the at least one first type of conductive track is mixed within the at least one second type of conductive track, the material and the layout of at least one second type of conductive track being indiscernible, by an observation device, from the material and the layout of the at least one first type of conductive track.

Abstract: The invention relates to a method for the anti-corrosion processing of a part that comprises the step of spray deposition of a zirconium and/or zirconium alloy layer onto the surface thereof.

Abstract: The invention provides a welding device (10) using a power laser beam (22), the device (10) being miniaturized, the device (10) being suitable for being moved very close to the surface (52a) of the part (52) to be welded and of reaching welding zones that are difficult to access, but without vapor and particles of molten metal (56) being capable of penetrating into the inside and dirtying the optical components (28, 48, 46). Such a device is remarkable in that it includes a feed (26) of gas under pressure suitable for producing a primary flow of gas (50) leaving via the front opening (20) together with the laser beam (22), and in that it also includes a nozzle (60) connectable to a source of gas under pressure, said nozzle (60) producing a secondary flow of gas (62) sweeping the front opening (20) transversely, thereby deflecting the primary flow of gas (50) laterally.

Abstract: The invention provides a welding device (10) using a power laser beam (22), the device (10) being miniaturized, the device (10) being suitable for being moved very close to the surface (52a) of the part (52) to be welded and of reaching welding zones that are difficult to access, but without vapor and particles of molten metal (56) being capable of penetrating into the inside and dirtying the optical components (28, 48, 46). Such a device is remarkable in that it includes a feed (26) of gas under pressure suitable for producing a primary flow of gas (50) leaving via the front opening (20) together with the laser beam (22), and in that it also includes a nozzle (60) connectable to a source of gas under pressure, said nozzle (60) producing a secondary flow of gas (62) sweeping the front opening (20) transversely, thereby deflecting the primary flow of gas (50) laterally.