Abstract: A sensor for sensing an analyte includes capacitive elements, each having a pair of electrodes separated by a dielectric wherein the dielectric constant of the dielectric of at least one of the capacitive elements is sensitive to the analyte, the sensor further including a comparator adapted to compare a selected set of capacitive elements against a reference signal and to generate a comparison result signal, and a controller for iteratively selecting the set in response to the comparison result signal, wherein the sensor is arranged to produce a digitized output signal indicative of the sensed level of the analyte of interest. An IC comprising such a sensor, an electronic device comprising such an IC and a method of determining a level of an analyte of interest using such a sensor are also disclosed.

Abstract: Apparatus for regulating the temperature of a light emitting diode (LED). The apparatus includes a heat sink, an LED mount, and an LED mounted on the LED mount. The LED mount is configured to change shape in response to a change in temperature. The change in shape alters the position of the LED relative to the heat sink, for adjusting heat transfer between the LED and the heat sink. The LED mount may include a laminated portion such as a bi-metallic strip.

Abstract: A display device comprises a substrate which carries an array of pixels. Each pixel comprises an array of apertures in the substrate, each aperture of the array having a maximum opening dimension less than the wavelength of the light to be transmitted through the aperture. The effective dielectric constant of the aperture and/or the dielectric constant of the substrate is varied, thereby to vary the light transmission characteristics of the pixel between transmission of at least one frequency in the visible spectrum and transmission of substantially no frequency in the visible spectrum.

Abstract: A lighting system for exterior lights of an automobile comprises a first lighting unit (10,12,14,16) primarily for outputting a first automotive light signal and a failure detection system (26) for detecting a failure of the first lighting unit (10,12,14,16). A second lighting unit is primarily for outputting a second automotive light signal. The second lighting unit comprises an LED light unit. A controller (30) is adapted to determine if there is failure of the first lighting unit, and if there is failure of the first lighting unit, to use the second lighting unit to generate the first automotive light signal. This is in response to an output request from the first lighting unit (10,12,14,16).

Abstract: A method is disclosed of controlling a LED, comprising driving the LED with a DC current for a first time, interrupting the DC current for a second time such that the first time and the second time sum to a period, determining at least one characteristic of the LED whilst the DC current is interrupted, and controlling the DC current during a subsequent period in dependence on the at least one characteristic. The invention thus benefits from the simplicity of DC operation. By operating at the LED in a DC mode, rather than say in a PWM mode, the requirement to be able to adjust the duty cycle is avoided. By including interruptions to the DC current, it is possible to utilise the LED itself to act as a sensor in order to determine a characteristic of the LED. The need for additional sensors is thereby avoided.

Abstract: The present invention relates to a calibration circuit, computer program product, and method of calibrating a junction temperature measurement of a semiconductor element, wherein respective forward voltages at junctions of the semiconductor element and a reference temperature sensor are measured, and an absolute ambient temperature is determined by using the reference temperature sensor, and the junction temperature of the semiconductor element is predicted based on the absolute ambient temperature and the measured forward voltages.

Abstract: A light sensor device comprises a substrate (10) having a well (12) defined in one surface. At least one light sensor (14) is formed at the base of the well (12), and an optical light guide (18) in the form of a transparent tunnel (18) within an opaque body (20) extends from a top surface of the device down a sloped side wall of the well (12) to the location of the light sensor (14).

Abstract: Apparatus for regulating the temperature of a light emitting diode (LED). The apparatus includes a heat sink, an LED mount, and an LED mounted on the LED mount. The LED mount is configured to change shape in response to a change in temperature. The change in shape alters the position of the LED relative to the heat sink, for adjusting heat transfer between the LED and the heat sink. The LED mount may include a laminated portion such as a bi-metallic strip.

Abstract: A damascene process is described using a copper fill process to fill a trench (12). The copper fill (20) is started with a deposited seed layer which includes (5) copper and titanium. Some titanium migrates to the surface during the copper fill process. The structure is annealed in a nitrogen atmosphere which creates a self-aligned TiN barrier (24) at the surface of the copper fill (20). Air gaps (26) may be created in the same annealing process. The process may be used to form a multilayer structure.

Abstract: An apparatus comprising at least one measuring cell (10) is disclosed. The measuring cell comprises a first cavity (16 and a second cavity (18) perpendicular to the first cavity, the first cavity and the second cavity comprising an overlap at first respective ends and a reflective surface (20) at the opposite respective ends. A beam splitter (15) is located in the overlap and an electromagnetic radiation source (12) is arranged to project a beam of electromagnetic radiation onto the beam splitter (15) such that the beam is projected into each of the cavities. A phase detector (22) for detecting a phase difference between the respective electromagnetic radiation reflected by the first and second cavity (16; 18) is also provided. In addition, the apparatus has a fluid channel (26), at least a part of which runs parallel to the first cavity (16) such that the electromagnetic radiation projected into the first cavity extends into said part of the fluid channel.

Abstract: A method of determining the ageing characteristics of an LED comprises applying a current stress pulse to the LED. The LED is monitored to determine when the thermal heating induced by the current stress pulse has been dissipated to a desired level. The operational characteristics of the LED are then measured before applying the next stressing pulse. This method accelerates the effect of aging in a reproducible way and therefore is able to greatly reduce the time needed for a reliability test.

Abstract: A method of estimating the output light flux of a light emitting diode, comprises applying a drive current waveform to the LED over a period of time comprising a testing period. The forward voltage across the LED is monitored during the testing period, and the output light flux is estimated as a function of changes in the forward voltage.

Abstract: A method of determining the dominant output wavelength of an LED, comprises determining an electrical characteristic of the LED which is dependent on the voltage-capacitance characteristics, and analysing the characteristic to determine the dominant output wavelength.

Abstract: A damascene process is described using a copper fill process to fill a trench (12). The copper fill (20) is started with a deposited seed layer which includes (5) copper and titanium. Some titanium migrates to the surface during the copper fill process. The structure is annealed in a nitrogen atmosphere which creates a self-aligned TiN barrier (24) at the surface of the copper fill (20). Air gaps (26) may be created in the same annealing process. The process may be used to form a multilayer structure.

Abstract: A method of manufacturing a semiconductor device with precision patterning is disclosed. A structure of a small dimension is created in a material, such as a semiconductor material, using a first and a second pattern, the patterns being identical but displaced over a distance with respect to each other. Two mask layers are used, wherein the first pattern is etched into the upper mask layer with a selective etch, and the second pattern is created on the upper mask layer or on the lower mask layer at locations where the upper mask layer has been removed. A part of the lower mask layer and/or the upper mask layer is etched according to the second pattern, resulting in a mask formed by remaining parts of the lower and upper mask layers, the mask having a structure with a dimension determined by a displacement of the second pattern with respect to the first pattern.