Abstract: The invention pertains to a doubling oscillator with low noise in the vicinity of the carrier frequency. The doubling oscillator of the invention is of the "push-push" type comprising two parallel-mounted transistors. The gates of these two transistors have a common oscillating circuit comprising two microstrip lines, two resistors and a common dielectric resonator positioned between the two microstrip lines. To reduce the low-frequency noise in the vicinity of the carrier near the load, the non-correlated low frequency noise sources of the transistors are either placed in series by means of a choke and two capacitances mounted at the ends of the microstrips or loaded at an infinite impedance through two capacitances mounted at the ends of the microstrips. This oscillator has applications in ultra-high frequency systems, radars and telecommunications.