Abstract: The present invention relates to a method for the detection of at least one nano or micro plastic particle comprised in a heterogeneous matrix material comprising the following steps: applying of at least one part of a heterogeneous matrix material comprising at least one nano or micro plastic particle onto at least a portion of a surface of a conductive support thereby forming a first layer onto said surface, irradiating of at least a portion of said first layer with at least one ion beam, thereby forming an irradiated layer, detecting of the at least one nano or micro plastic particle comprised in said irradiated layer by a detection method chosen from the group of Raman nanoscopic techniques, or infrared nanoscopic techniques, or charge dependent detection methods or combination thereof. The present invention allowed good detection of micro and nano plastic particles with high resolution and sensitivity.

Abstract: The present invention relates to a method for the detection of at least one nano or micro plastic particle comprised in a heterogeneous matrix material comprising the following steps: applying of at least one part of a heterogeneous matrix material comprising at least one nano or micro plastic particle onto at least a portion of a surface of a conductive support thereby forming a first layer onto said surface, irradiating of at least a portion of said first layer with at least one ion beam, thereby forming an irradiated layer, detecting of the at least one nano or micro plastic particle comprised in said irradiated layer by a detection method chosen from the group of Raman nanoscopic techniques, or infrared nanoscopic techniques, or charge dependent detection methods or combination thereof. The present invention allowed good detection of micro and nano plastic particles with high resolution and sensitivity.

Abstract: A nanoparticle screening chip and a method using said chip allowing for determining physical properties of nanoparticles, wherein the screening chip comprises a substrate having a working surface divided into a plurality of areas, wherein (1) each of these areas presents different surface properties defined by surface energy component (d,b,a), the total free energy ?TOT of the surface of each area being defined as follows: ?TOT=?LW+2(?+??)0.5, wherein the components are: ?LW=dispersive component=d, ?+=electron acceptor component=b, ??=electron donor component=a; and (2) each of these areas comprises a plurality of subareas, each subarea comprising an array of sub-micrometric holes or elongated grooves with a different aperture size (S1, S2, S3, . . . ).

Abstract: A nanoparticle screening chip and a method using said chip allowing for determining physical properties of nanoparticles, wherein the screening chip comprises a substrate having a working surface divided into a plurality of areas, wherein (1) each of these areas presents different surface properties defined by surface energy component (d,b,a), the total free energy ?TOT of the surface of each area being defined as follows: ?TOT=?LW+2(?+??)0.5, wherein the components are: ?LW=dispersive component=d, ?+=electron acceptor component=b, ??=electron donor component=a; and (2) each of these areas comprises a plurality of subareas, each subarea comprising an array of sub-micrometric holes or elongated grooves with a different aperture size (S1, S2, S3, . . . ).

Abstract: A sensor device comprises a dielectric substrate (52); and a metal layer (53) on the substrate (52) with at least one array of cavities (54) therein and adapted to support L-SPR, each of the cavities (54) in the metal layer (53) having an opening (56) and a closed bottom (58) and widening from opening to bottom. A bed of dielectric material (62) is provided over the bottom (58) of each cavity (54) to reduce its apparent depth, the bed surface (62) being functionalized to bind to receptor moieties (64). This sensor device is particularly designed for SPR detection, but can be used in other detection techniques.

Abstract: A sensor device comprises a dielectric substrate (52); and a metal layer (53) on the substrate (52) with at least one array of cavities (54) therein and adapted to support L-SPR, each of the cavities (54) in the metal layer (53) having an opening (56) and a closed bottom (58) and widening from opening to bottom. A bed of dielectric material (62) is provided over the bottom (58) of each cavity (54) to reduce its apparent depth, the bed surface (62) being functionalized to bind to receptor moieties (64). This sensor device is particularly designed for SPR detection, but can be used in other detection techniques.

Abstract: A SPR sensing method comprising the steps of: providing a SPR sensor comprising a SPR supporting sensor surface and contacting a sample to be analysed with the sensor surface. At least one resonance condition at said SPR supporting sensor surface is monitored by illuminating the sensor surface with an SPR exciting test light beam and sensing the reflected or transmitted test light beam. Additionally, the sensor surface is illuminated with a reference light beam under conditions selected so as not to excite SPR at said sensor surface and sensing the intensity of the reflected or transmitted reference light beam. At least one property of the reflected or transmitted test light beam is determined taking into account the sensed intensity of the reflected or transmitted reference light beam.

Abstract: A SPR sensing method comprising the steps of: providing a SPR sensor comprising a SPR supporting sensor surface and contacting a sample to be analysed with the sensor surface. At least one resonance condition at said SPR supporting sensor surface is monitored by illuminating the sensor surface with an SPR exciting test light beam and sensing the reflected or transmitted test light beam. Additionally, the sensor surface is illuminated with a reference light beam under conditions selected so as not to excite SPR at said sensor surface and sensing the intensity of the reflected or transmitted reference light beam. At least one property of the reflected or transmitted test light beam is determined taking into account the sensed intensity of the reflected or transmitted reference light beam.

Abstract: An inductively coupled plasma processing apparatus (100) comprises a plasma chamber (12) with a dielectric window (400) forming a self-supporting wall element of the plasma chamber (12). The dielectric window (400) has an external and an internal side with respect to the chamber (12). An electromagnetic field source (140) is arranged in front of the external side of the dielectric window (400) for generating an electromagnetic field within the plasma chamber (12). The field source comprises at least one magnetic core (301, 302, 303). The at least one magnetic core (301, 302, 303) is attached to the external side of the dielectric window (400), such that the at least one magnetic core helps the dielectric window (400) to withstand collapsing forces caused by negative pressure inside said chamber during operation.

Abstract: A process for controlling the wettability of a silicon-containing substrate including forming a polymer coating over at least one surface region of the silicon substrate, the wettability of which is to be controlled; inducing a controlled roughness on the at least one surface region by over-etching the polymer coating using a fluorinated plasma; subjecting the at least one surface region to a surface energy modifying treatment.

Abstract: An apparatus for plasma treatment of a non-conductive hollow substrate, including a plurality of ionization energy sources disposed adjacent to each other all along the part of the substrate to be treated. The apparatus also includes a processor to sequentially power the plurality of ionization energy sources from a radio frequency power source. Each ionization energy source includes two parts sandwiching the substrate. The ionization energy sources can be capacitively or inductively coupled plasma sources.

Abstract: An inductively coupled plasma processing apparatus (100) comprises a plasma chamber (12) with a dielectric window (400) forming a self-supporting wall element of the plasma chamber (12). The dielectric window (400) has an external and an internal side with respect to the chamber (12). An electromagnetic field source (140) is arranged in front of the external side of the dielectric window (400) for generating an electromagnetic field within the plasma chamber (12). The field source comprises at least one magnetic core (301, 302, 303). The at least one magnetic core (301, 302, 303) is attached to the external side of the dielectric window (400), such that the at least one magnetic core helps the dielectric window (400) to withstand collapsing forces caused by negative pressure inside said chamber during operation.

Abstract: The apparatus for plasma treatment of a non-conductive hollow substrate (1), comprises a plurality of ionisation energy sources (7-10) disposed adjacent to each other all along the part of the substrate to be treated. The apparatus further comprises a processing means (11) for sequentially powering the plurality of ionisation energy sources from a radio frequency power source (6). Each ionisation energy source (7) is comprised of two parts (7a, 7b) sandwiching the substrate. The ionisation energy sources can be capacitively or inductively coupled plasma sources.

Abstract: The plasma processing apparatus comprises a plasma chamber (1) bounded, on at least one side thereof, by an electrically conductive wall (10), said electrically conductive wall comprising one or several apertures (100) for interrupting a current path through said wall, external electromagnetic means (2) for supplying electromagnetic energy into the plasma chamber through the electrically conductive wall, thereby generating a plasma inside said chamber, and sealing means for sealing the apertures. The apparatus is characterised in that the sealing means comprises one or more electrically conductive enclosure elements which are electrically insulated from the electrically conductive wall.

Abstract: An apparatus configured to generate a time-varying magnetic field through a field admission window of a plasma processing chamber to create or sustain a plasma within the chamber by inductive coupling. The apparatus includes a magnetic core presenting a pole face structure,—an inductor means associated with the magnetic core, arranged to generate a time-varying magnetic field through the pole face structure, and—a device for injecting gas into the chamber and through the chamber and through the magnetic core.

Abstract: The apparatus for plasma treatment of a non-conductive hollow substrate (5), comprises a plasma chamber (12) provided with two oppositely facing field admission windows (8, 9), and first and second opposite coil arrangements (20, 30) located on an outer surface (8a; 9a) of the first and second windows respectively. The first and second coil arrangements being connected to power supply means (4) such that a current (I) of a same direction flows simultaneously in the first and second coil arrangements. The two coil arrangements (20, 30) induce through the substrate a magnetic flux (7) transversal and perpendicular to a substrate depth (L) for generating an electrical field in the substrate plan.

Abstract: The apparatus for plasma treatment of a non-conductive hollow substrate (5), comprises a plasma chamber (12) provided with two oppositely facing field admission windows (8, 9), and first and second opposite coil arrangements (20, 30) located on an outer surface (8a; 9a) of the first and second windows respectively. The first and second coil arrangements being connected to power supply means (4) such that a current (I) of a same direction flows simultaneously in the first and second coil arrangements. The two coil arrangements (20, 30) induce through the substrate a magnetic flux (7) transversal and perpendicular to a substrate depth (L) for generating an electrical field in the substrate plan.

Abstract: A plasma processing apparatus comprises a processing chamber having at least one opening for receiving field energy by inductive coupling, and at least one field energy source arranged to induce the field energy into the chamber via the corresponding opening. The field energy source comprises an inductor device associated with a magnetic core. The magnetic core forms a closure and gas seal for the corresponding opening.

Abstract: A process for melting an electroconductive material (1) in a melting furnace (10) by induction in a cold crucible includes electromagnetically confining a mass of the electroconductive material (1) up to its melting temperature. Then, at least one vortex is created in the liquid material to inclusion particles contained in the liquid electroconductive material. The vortex or vortices are created by electromagnetic stirring. A part of the mass of the liquid electroconductive material (1) is poured in a pouring tube (15) disposed under the melting furnace (10), subjecting the jet of the pouring of the liquid electroconductive material (1) to a radial electromagnetic confinement, and ensuring a vertical coaxial alignment of the electromagnetic fields acting on the mass of liquid electroconductive material (1) and on the pouring jet of the mass. An induction melting furnace employing a cold crucible for carrying out this is also disclosed.