Abstract: A distributed feedback semiconductor laser comprising a substrate and, on such substrate, a double heterostructure formed by a confinement layer, an active layer, a guiding layer engraved to form a diffraction network, the active layer and the guiding layer being engraved to form a ribbon having a certain width and a certain thickness and a central portion of larger width and thickness, a metal electrode surmounting the assembly and enabling charges to be injected through the ribbon, wherein the metal electrode comprises two distinct portions forming a first electrode disposed above the central widened or thickened portion of the ribbon, the first electrode being connected to a first connection for the injection of a first current and a second electrode disposed above the rest of the ribbon and connected to a second connection for the injection of a second current.