Abstract: The invention relates to platinum complexes, to a method for preparing the same and to the use thereof for the chemical vapor deposition of metal platinum. The chemical vapor deposition of platinum onto a substrate is made from a platinum organo-metal compound the includes a ligand with a cyclic structure including at least two non-adjacent C?C double bonds, and the platinum organo-metal compound has a square-lane structure in which the platinum is bonded to each of the C?C double bonds of the ligand, thereby forming a (C?C)—Pt—(C?C) of 60° to 70°.

Abstract: The invention relates to platinum complexes, to a method for preparing the same and to the use thereof for the chemical vapour deposition of metal platinum. The chemical vapour deposition of platinum onto a substrate is made from a platinum organometallic compound that includes a ligand with a cyclic structure including at least two non-adjacent C?C double bonds, and the platinum organometallic compound has a square-plane structure in which the platinum is bonded to each of the C?C double bonds of the ligand, thereby forming a (C?C)—Pt—(C?C) of 60° to 70°.

Abstract: The invention relates to the deposition of thin silver films on various substrates, particularly superconductor substrates. The method consists of CVD deposition of silver on a substrate with the aid of a silver precursor solution. The silver precursor is an RCO2Ag silver carboxylate, wherein R is a linear or branched radical having 3-7 carbon atoms, used in the form of an organic liquid solution. The precursor concentration of the solution ranges from 0.01 to 0.6 mol/l. The organic liquid comprises an amine and/or a nitrile and, optionally, a solvent whose evaporation temperature is lower than the decomposition temperature of the precursor. The percentage by volume of the amine and/or nitrile in the organic liquid is more than 0.1%.

Abstract: The invention concerns novel copper or silver complexes and their use for gas-phase chemical deposition of metal copper or silver almost free of impurities.

Abstract: The invention relates to the deposition of thin silver films on various substrates, particularly superconductor substrates. The method consists of CVD deposition of silver on a substrate with the aid of a silver precursor solution. The silver precursor is an RCO2Ag silver carboxylate, wherein R is a linear or branched radical having 3-7 carbon atoms, used in the form of an organic liquid solution. The precursor concentration of the solution ranges from 0.01 to 0.6 mol/l. The organic liquid comprises an amine and/or a nitrile and, optionally, a solvent whose evaporation temperature is lower than the decomposition temperature of the precursor. The percentage by volume of the amine and/or nitrile in the organic liquid is more than 0.1%.

Abstract: A process for the deposition of copper on a support. The process includes bringing a copper precursor, in the vapor phase, into contact with a heated support, optionally in the presence of hydrogen. The copper precursor is in the form of a CuCl or CuBr composition in a nonaromatic, nonplanar and heteroatom-free liquid organic solvent which exhibits at least two nonconjugated unsaturations.

Abstract: The invention concerns novel copper or silver complexes and their use for gas-phase chemical deposition of metal copper or silver almost free of impurities.

Abstract: The invention relates to a process for the deposition of copper on a support. The process consists in bringing a copper precursor, in the vapor phase, into contact with the heated support, optionally in the presence of hydrogen. The copper precursor is in the form of a CuCl or CuBr composition in a nonaromatic, nonplanar and heteroatom-free liquid organic solvent which exhibits at least two nonconjugated unsaturations.

Abstract: The invention concerns complex compounds of oxidised copper (+1) stabilised by a ligand for the gas phase chemical deposit of copper in which copper is coordinated with a .beta.-diketonate and the ligand is an alkyne of which the triple bond is partially deactivated by one or two groups slightly attracting the electrons by said alkyne.

Abstract: The present invention relates to a method for treating a substrate surface. The substrate surface is coated with a thin film of a treating agent, which is capable of enhancing or reducing its affinity towards a metal precursor by exposure to an arbitrary kind of radiation beam. In a subsequent metal deposition step utilizing the metal precursor, the metal is selectively deposited on the exposed or unexposed areas, depending on the kind of treating agent. (FIG.