Abstract: Disclosed is a process of manufacturing a chemically reduced graphene oxide/silicon nanowire composite. The formation of the three-dimensional monolith and the chemical reduction of graphene oxide by a reducing agent selected from hydrazine hydrate, ethylene diamine and 1,4-diaminebutane are in one step. Also disclosed is a chemically reduced graphene oxide/silicon nanowire composite that can be obtained by the disclosed process. The composite is a three-dimensional monolith in which the two components are covalently linked each other, having a high degree of reduction with a C/O ratio of 1-50, preferably from 10 to 25, more preferably 16.7, having a porous structure and a high specific surface area of 50-5,000 m2/g, preferably 800-2,500 m2/g, more preferably 1,433 m2/g and having a low resistance to charge transfer from 0.1 to 5 ?, preferably from 0.3 to 1.5 ?. Also disclosed is a lithium-ion battery or a supercapacitor including the composite (or monolith).

Abstract: The invention relates to an electrode, to the method for manufacturing same and to a device for storing and delivering electric power including same. The electrode of the invention includes a mounting, made of a conductor or semiconductor material, the mounting including, on at least one of the surfaces thereof, at least one nanostructure made of a semiconductor material, characterized by also including a protective layer made of a material selected among a dielectric material having an intrinsic capacity of 1.5 10?6 to 10 10?6 F/cm2 and a metal, the layer having a thickness that is less than the height of said nanostructure, and covering the at least one nanostructure. The invention is useful in the field of electrochemical storage and, in particular, in the field of ultracapacitors.

Abstract: The transistor (100) comprises a nanowire (101) at least partially forming a channel of the transistor (100), a source contact (102) arranged at a first longitudinal end (103) of the nanowire (101), a drain contact (104) arranged at a second longitudinal end (105) of the nanowire (101), and a gate (106) arranged on the nanowire (101) between the source contact (102) and the drain contact (104). Furthermore, a portion of the gate (106) covers, with the interposition of a dielectric material (107), a corresponding portion of the source contact (102) and/or of the drain contact (104) arranged along the nanowire (101) between its two longitudinal ends (103, 105).

Abstract: A process of making a microelectronic light-emitting device, including: a) growth on a metallic support of multiple wires based on one or more semi-conducting materials designed to emit radiant light, and b) formation of at least one electrical conducting zone of contact on at least one of the wires.

Abstract: The invention relates to a process for the formation of pores of controlled shape, dimensions and distribution in a polymer matrix comprising a step of embedding silicon nanowires and/or nanotrees in a nonpolymerized polymer matrix or a nonpolymerized polymer matrix in suspension or in solution in at least one solvent, a step of curing the polymer matrix, and a step of removing the silicon nanowires and/or nanotrees by chemical treatment. The process of the invention can be used for the manufacture of a proton exchange membrane fuel cell active layer. The invention has applications in the field of manufacture of proton exchange membrane fuel cells, in particular.

Abstract: An electron transport device, including at least one transport layer in which at least one periodic dislocation and/or defect array is produced, and a mechanism for guiding electrons in the transport layer.

Abstract: Electrodes made from metallic material are formed on a layer of dielectric material. A bottom layer of at least one of the electrodes constitutes a catalyst material in direct contact with the layer of dielectric material. Nanowires are grown by means of the catalyst, between the electrodes, parallel to the layer of dielectric material. The nanowires connecting the two electrodes are then made from single-crystal semi-conductor material and in contact with the layer of dielectric material.

Abstract: Electrodes made from metallic material are formed on a layer of dielectric material. A bottom layer of at least one of the electrodes constitutes a catalyst material in direct contact with the layer of dielectric material. Nanowires are grown by means of the catalyst, between the electrodes, parallel to the layer of dielectric material. The nanowires connecting the two electrodes are then made from single-crystal semi-conductor material and in contact with the layer of dielectric material.

Abstract: The invention relates to a process for the formation of pores of controlled shape, dimensions and distribution in a polymer matrix comprising a step of embedding silicon nanowires and/or nanotrees in a nonpolymerized polymer matrix or a nonpolymerized polymer matrix in suspension or in solution in at least one solvent, a step of curing the polymer matrix, and a step of removing the silicon nanowires and/or nanotrees by chemical treatment. The process of the invention can be used for the manufacture of a proton exchange membrane fuel cell active layer. The invention has applications in the field of manufacture of proton exchange membrane fuel cells, in particular.

Abstract: A process of making a microelectronic light-emitting device, including: a) growth on a metallic support of multiple wires based on one or more semi-conducting materials designed to emit radiant light, and b) formation of at least one electrical conducting zone of contact on at least one of the wires.

Abstract: An electron transport device, including at least one transport layer in which at least one periodic dislocation and/or defect array is produced, and a mechanism for guiding electrons in the transport layer.