Abstract: A switch arrangement comprising: a bi-directional metal-oxide-semiconductor, MOS, switch having a drain, source and gate and a body; a first circuit coupled between the drain, the gate and the source for providing electrostatic discharge protection; a first transistor having a source coupled to the body of the MOS switch, a drain coupled to the source of the MOS switch and a gate coupled to the gate of the MOS switch; and a second circuit for providing electrostatic discharge protection comprising a first diode of Zener diode type having an anode coupled to the body of the MOS switch and a cathode coupled to the source, and a second transistor having a source coupled to the body of the MOS switch, a drain coupled to the source of the MOS switch and a gate coupled to the anode of the first diode.

Abstract: A driver circuit for a BMS and method are disclosed, comprising a series arrangement of at least a cell and at least a busbar, and comprising: a first and second voltage rail having a respective first and second terminals for connection to ends of one of the busbar and the cell; a power supply voltage rail, configured to operate at a voltage which is higher than the second voltage rail; a determination circuit, for detecting a lower of supply, LOS, being the one of the first and second voltage rail which is at a lower voltage, and drawing a first bias current from the power supply draw to the LOS; further analog circuit blocks drawing a second bias current from the power supply rail to the LOS; and a current sink circuit arrangement drawing the sum of the first and second bias currents, from the LOS to a ground.

Abstract: A receiver circuit comprising: an input-pin; a receiver-input-node; a ground-pin; an internal-node that is connected to the input-pin; and a MOSFET. The MOSFET has a conduction channel connected in series between the internal-node and the receiver-input-terminal; and a gate terminal, the voltage at which sets the conductivity of the conduction channel. The receiver circuit also includes an amplifier that: has an input terminal that is connected to the internal-node; and provides a voltage control signal to the gate terminal of the MOSFET such that the voltage at the internal-node with respect to the ground-pin is constant.

Abstract: A switching circuit for cell-balancing in a battery management system, BMS. The switching circuit comprises: a first battery connection terminal, for connecting to a first battery terminal; a second battery connection terminal, for connecting to a second battery terminal; and a cell balancing field effect transistor, FET. The cell balancing FET comprises: a gate terminal; a drain terminal connected to the first battery connection terminal; a source terminal for connected to the second battery connection terminal; and a body terminal. The switching circuit further comprises: a gate control circuit that is configured to connect the gate terminal of the cell balancing FET to the battery connection terminal that has the lowest voltage; and a bias resistor that is connected in series between the body terminal of the cell balancing FET and one of the first and second battery connection terminals.

Abstract: A switch arrangement comprising: a bi-directional metal-oxide-semiconductor, MOS, switch having a drain, source and gate and a body; a first circuit coupled between the drain, the gate and the source for providing electrostatic discharge protection; a first transistor having a source coupled to the body of the MOS switch, a drain coupled to the source of the MOS switch and a gate coupled to the gate of the MOS switch; and a second circuit for providing electrostatic discharge protection comprising a first diode of Zener diode type having an anode coupled to the body of the MOS switch and a cathode coupled to the source, and a second transistor having a source coupled to the body of the MOS switch, a drain coupled to the source of the MOS switch and a gate coupled to the anode of the first diode.

Abstract: A circuit is disclosed, comprising: an inverter comprising first and second inverter transistors, each having: a gate terminal connected in common to a drive node, a source terminal, connected to respective first and second voltage rails, and a drain terminal connected to a common first resistor, wherein an inverter output node is connected between the first resistor and the drain terminal of a shorting one of the transistors; a tying transistor connected between the drive node and the voltage rails to which the shorting transistor is connected; a biasing circuit connected to the tying transistor's control terminal and configured to be controlled by a local drive signal and bias the tying transistor control terminal to a voltage such that the tying transistor ties the drive node of the relevant voltage rail in response to the drive signal having a first state; and a circuit for providing the local drive signal.

Abstract: A sensor interface circuit includes a continuous-time capacitance-to-voltage (C/V) converter having C/V input and output ends, the C/V input end being configured for electrical connection with first and second sense nodes of a capacitive sensor. A filter circuit is electrically coupled to the C/V output ends. The filter circuit has first and second resistors at corresponding first and second filter input ends of the filter circuit, a capacitor connected between first and second filter output ends of the filter circuit, and a chopper circuit interposed between the first and second filter input ends and the first and second filter output ends. A buffer circuit is electrically coupled with the first and second filter output ends of the filter circuit. The filter circuit applies low pass filtering of sense signals from the capacitive sensor before sampling and demodulation operations to reduce high-frequency interference in the sense signals.

Abstract: Stabiliser circuits and methods are disclosed, for stabilizing a voltage at a gate driver terminal of a gate-driver for a driven transistor to a one of a high voltage and a low voltage, the stabilizer circuit comprising: a first transistor and a second transistor having respective first and second main terminals and connected in series between the gate voltage terminal and a first reference voltage terminal; and a low-pass filter connected between a control terminal of the first transistor and the gate driver terminal; wherein the first transistor is configured to have a threshold voltage which is less that a threshold voltage of the driven transistor; and the second transistor has a control terminal which is configured to be connected to a voltage which is an oppositive of the voltage at the gate driver terminal.

Abstract: A receiver circuit comprising: an input-pin; a receiver-input-node; a ground-pin; an internal-node that is connected to the input-pin; and a MOSFET. The MOSFET has a conduction channel connected in series between the internal-node and the receiver-input-terminal; and a gate terminal, the voltage at which sets the conductivity of the conduction channel. The receiver circuit also includes an amplifier that: has an input terminal that is connected to the internal-node; and provides a voltage control signal to the gate terminal of the MOSFET such that the voltage at the internal-node with respect to the ground-pin is constant.

Abstract: An integrated electro-static discharge (ESD) device has a set of metal layers. Each metal layer in the set has one or more first-terminal metal features interleaved with one or more second-terminal metal features in a lateral direction, and at least one first-terminal metal feature in a metal layer of the set overlaps in a normal direction at least one second-terminal metal feature in an adjacent metal layer of the set. By overlapping metal features in the normal direction, capacitance can be added to the ESD device, which improves its operating characteristics, without increasing the layout size of the ESD device.

Abstract: An integrated circuit can comprise an output terminal, a power transistor having a first current electrode coupled to the output terminal and a second current electrode coupled to a power supply terminal, a driver having an output coupled to a control electrode of the power switch, a capacitor having a first terminal coupled to the output terminal and a second terminal coupled to a circuit node, a first low pass filter coupled between the circuit node and an input of the driver, the first low pass filter having a first cut off frequency, a set of current sources, and a second low pass filter coupled between the circuit node and an output of the set of current sources. The second low pass filter can have a second cut off frequency that is higher than the first cut off frequency.

Abstract: Stabiliser circuits and methods are disclosed, for stabilizing a voltage at a gate driver terminal of a gate-driver for a driven transistor to a one of a high voltage and a low voltage, the stabilizer circuit comprising: a first transistor and a second transistor having respective first and second main terminals and connected in series between the gate voltage terminal and a first reference voltage terminal; and a low-pass filter connected between a control terminal of the first transistor and the gate driver terminal; wherein the first transistor is configured to have a threshold voltage which is less that a threshold voltage of the driven transistor; and the second transistor has a control terminal which is configured to be connected to a voltage which is an oppositive of the voltage at the gate driver terminal.

Abstract: A circuit is disclosed, comprising: an inverter comprising first and second inverter transistors, each having: a gate terminal connected in common to a drive node, a source terminal, connected to respective first and second voltage rails, and a drain terminal connected to a common first resistor, wherein an inverter output node is connected between the first resistor and the drain terminal of a shorting one of the transistors; a tying transistor connected between the drive node and the voltage rails to which the shorting transistor is connected; a biassing circuit connected to the tying transistor's control terminal and configured to be controlled by a local drive signal and bias the tying transistor control terminal to a voltage such that the tying transistor ties the drive node of the relevant voltage rail in response to the drive signal having a first state; and a circuit for providing the local drive signal.

Abstract: There is disclosed herein an SOI IC comprising an integrated capacitor comprising a parallel arrangement of a metal-insulator-metal, MIM, capacitor, a second capacitor, a third capacitor, and a fourth capacitor: wherein the second capacitor comprises as plates the substrate and a one of a plurality of semiconductor layers having an n-type doping, and comprises the buried oxide layer as dielectric; the third capacitor comprises as plates the polysilicon layer and a further one of a plurality of semiconductor layers having an n-type doping, and comprises an insulating layer between the plurality of semiconductor layers and the metallisation stack as dielectric; and the fourth capacitor comprises as plates the polysilicon plug and at least one of the plurality of semiconductor layers and comprises the oxide-lining as dielectric, wherein the oxide lining and the polysilicon plug form part of a lateral isolation (DTI) structure.

Abstract: An integrated circuit can comprise an output terminal, a power transistor having a first current electrode coupled to the output terminal and a second current electrode coupled to a power supply terminal, a driver having an output coupled to a control electrode of the power switch, a capacitor having a first terminal coupled to the output terminal and a second terminal coupled to a circuit node, a first low pass filter coupled between the circuit node and an input of the driver, the first low pass filter having a first cut off frequency, a set of current sources, and a second low pass filter coupled between the circuit node and an output of the set of current sources. The second low pass filter can have a second cut off frequency that is higher than the first cut off frequency.

Abstract: There is disclosed herein an SOI IC comprising an integrated capacitor comprising a parallel arrangement of a metal-insulator-metal, MIM, capacitor, a second capacitor, a third capacitor, and a fourth capacitor: wherein the second capacitor comprises as plates the substrate and a one of a plurality of semiconductor layers having an n-type doping, and comprises the buried oxide layer as dielectric; the third capacitor comprises as plates the polysilicon layer and a further one of a plurality of semiconductor layers having an n-type doping, and comprises an insulating layer between the plurality of semiconductor layers and the metallisation stack as dielectric; and the fourth capacitor comprises as plates the polysilicon plug and at least one of the plurality of semiconductor layers and comprises the oxide-lining as dielectric, wherein the oxide lining and the polysilicon plug form part of a lateral isolation (DTI) structure.

Abstract: An integrated electro-static discharge (ESD) device has a set of metal layers. Each metal layer in the set has one or more first-terminal metal features interleaved with one or more second-terminal metal features in a lateral direction, and at least one first-terminal metal feature in a metal layer of the set overlaps in a normal direction at least one second-terminal metal feature in an adjacent metal layer of the set. By overlapping metal features in the normal direction, capacitance can be added to the ESD device, which improves its operating characteristics, without increasing the layout size of the ESD device.

Abstract: A sensor interface circuit includes a continuous-time capacitance-to-voltage (C/V) converter having C/V input and output ends, the C/V input end being configured for electrical connection with first and second sense nodes of a capacitive sensor. A filter circuit is electrically coupled to the C/V output ends. The filter circuit has first and second resistors at corresponding first and second filter input ends of the filter circuit, a capacitor connected between first and second filter output ends of the filter circuit, and a chopper circuit interposed between the first and second filter input ends and the first and second filter output ends. A buffer circuit is electrically coupled with the first and second filter output ends of the filter circuit. The filter circuit applies low pass filtering of sense signals from the capacitive sensor before sampling and demodulation operations to reduce high-frequency interference in the sense signals.

Abstract: An integrated circuit for use in a differential network bus node comprising: a transceiver having a first transceiver input-output terminal and a second transceiver input-output terminal; a physical layer high terminal connected to the first transceiver input-output-terminal; a physical layer low terminal connected to the second transceiver input-output terminal; and a physical layer interface circuit comprising: a first low frequency RC matching circuit and a first high frequency RC matching circuit each connected between the first transceiver input-output-terminal and a first reference terminal; and a second low frequency RC matching circuit and a second high frequency RC matching circuit each connected between the second transceiver input-output terminal and a second reference terminal.

Abstract: An integrated circuit (202) for use in a differential network bus node (200) comprising: a transceiver (212) having a first transceiver input-output terminal (214) and a second transceiver input-output terminal (216); a physical layer high terminal (208) connected to the first transceiver input-output-terminal (214); a physical layer low terminal (210) connected to the second transceiver input-output terminal (216); and a physical layer interface circuit (234) comprising: a first low frequency RC matching circuit (236) and a first high frequency RC matching circuit (240) each connected between the first transceiver input-output-terminal (214) and a first reference terminal (238); and a second low frequency RC matching circuit (242) and a second high frequency RC matching circuit (246) each connected between the second transceiver input-output terminal (216) and a second reference terminal (244).