Abstract: A method implemented in an electronic device comprising at least two processor cores is described. In one embodiment, the method includes increasing, according to a load of one of the processor cores, a number of processor cores used for operating the electronic device, amongst the processor cores, and/or an operating frequency of at least one of the processor cores. A corresponding electronic device, and corresponding System on Chip, electronic device, electronic assembly, computer readable program product and computer readable storage medium are also described.

Abstract: The substrate is formed by a stack of sheets of dielectric material (10) at least some of which have conductive patterns thereon (21-24); the substrate has conductive emerging portions (31, 32) for connecting the terminals of the component (1) to at least one internal layer provided with conductive tracks (24) providing layer-to-layer interconnection and interconnection with emerging portions in accordance with a pre-established patterns. According to the invention, the composition of the dielectric material comprises 92% to 98% alumina, and preferably 96%, with a melting agent based on magnesia titanate enabling the maximum firing temperature to be reduced to about 1400.degree. C. The conductive patterns are made of a non-oxidizable metal which is not meltable at high temperature, e.g. palladium or a silver-palladium alloy. The properties of the substrate obtained in this manner are comparable to those of a substrate made of 99.9% ultra-pure alumina.

Abstract: The substrate is formed by a stack of sheets of dielectric material (10) at least some of which have conductive patterns thereon (21-24); the substrate has conductive emerging portions (31, 32) for connecting the terminals of the component (1) to at least one internal layer provided with conductive tracks (24) providing layer-to-layer interconnection and interconnection with emerging portions in accordance with a pre-established patterns. According to the invention, the composition of the dielectric material comprises 92% to 98% alumina, and preferably 96%, with a melting agent based on magnesia titanate enabling the maximum firing temperature to be reduced to about 1400.degree. C. The conductive patterns are made of a non-oxidizable metal which is not meltable at high temperature, e.g. palladium or a silver-palladium alloy. The properties of the substrate obtained in this manner are comparable to those of a substrate made of 99.9% ultra-pure alumina.

Abstract: The invention relates to a support (100) for a high-speed component (30) in particular a hyperfrequency component. The support is in the form of a stack of high dielectric constant ceramic sheets which are sintered and which are suitable for receiving surface metallization (21-24) to constitute connections to the terminals of the component.According to the invention, the support includes a central zone (110) emerging in the surface of the support with substantially the same area as the supported component (30) and is immediately adjacent to the location of the future supported component. This zone is formed of low dielectric constant material. Outside the central zone and peripheral thereto, the support includes at least one internal metallization (131, 132) at shallow depth (e) formed by a conductive pattern carried by one of the sheets of the stack and connected to a ground connection (141, 142).