Patents by Inventor Pascal Masson

Pascal Masson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250006267
    Abstract: The non-volatile memory device includes memory cells including a control gate vertically buried in a semiconductor substrate doped with a first type of dopant and a dielectric interface able to trap electrical charges covering sides of the control gate facing the semiconductor substrate. The device furthermore includes a vertical implanted region of a second type of dopant opposite to the first type located along the sides of the control gate in the semiconductor substrate.
    Type: Application
    Filed: June 25, 2024
    Publication date: January 2, 2025
    Inventors: Radouane Habhab, Vincenzo Della Marca, Nadia Miridi ép Seroschtanoff, Pascal Masson, Franck Melul, Madjid Akbal
  • Patent number: 8720244
    Abstract: The present invention provides a method for supplying lubricant to various kinds of steel sheets with different qualities in cold rolling without any restrictions, such as lubricant supplying apparatus or lubrication conditions. This method comprises storing two or more kinds of lubricant such as A and B, having different compositions, selecting one lubricant or a mixture lubricant of the above A and B in accordance with the friction coefficient between the steel sheet to be cold rolled and a work-rolls, and supplying an emulsion comprising a mixture of the lubricant A and/or B and heated water.
    Type: Grant
    Filed: November 17, 2005
    Date of Patent: May 13, 2014
    Assignees: Nippon Steel & Sumitomo Metal Corporation, Arcelor France
    Inventors: Yoshiki Takahama, Toshiyuki Shiraishi, Shigeru Ogawa, Luc Vanel, Guy Hauret, Maxime Laugier, Pascal Masson
  • Publication number: 20140109640
    Abstract: The present invention provides a method for supplying lubricant to various kinds of steel sheets with different qualities in cold rolling without any restrictions, such as lubricant supplying apparatus or lubrication conditions. This method comprises storing two or more kinds of lubricant such as A and B, having different compositions, selecting one lubricant or a mixture lubricant of the above A and B in accordance with the friction coefficient between the steel sheet to be cold rolled and a work-rolls, and supplying an emulsion comprising a mixture of the lubricant A and/or B and heated water.
    Type: Application
    Filed: January 2, 2014
    Publication date: April 24, 2014
    Applicant: Nippon Steel & Sumitomo Metal Corporation
    Inventors: Yoshiki Takahama, Toshiyuki Shiraishi, Shigeru Ogawa, Luc Vanel, Guy Hauret, Maxime Laugier, Pascal Masson
  • Patent number: 7954350
    Abstract: The present invention provides a method of supplying lubrication oil in cold rolling for stable rolling without heat scratches or slip and achieving high productivity and improvement of the unit consumption of lubrication oil, that is, a method of supplying lubrication oil in cold rolling by supplying a predetermined kind of emulsion lubrication oil comprised of a mixture of rolling oil and water at the rolling stand inlet from nozzles, the method characterized by measuring or estimating the pressure in the lubrication nozzle pipe (lubrication nozzle pressure), controlling the lubrication nozzle pressure of the rolling stand where lubrication is susceptible to become excessive with the predetermined emulsion lubrication oil to 0.5 MPa or more, and, while doing so, supplying the lubrication oil to the roll bite inlet of the stand by direct injection.
    Type: Grant
    Filed: November 17, 2005
    Date of Patent: June 7, 2011
    Assignees: Nippon Steel Corporation, Arcelor France
    Inventors: Yoshiki Takahama, Toshiyuki Shiraishi, Shigeru Ogawa, Luc Vanel, Guy Hauret, Maxime Laugier, Pascal Masson
  • Patent number: 7675106
    Abstract: A non-volatile memory point including a floating gate placed above a semiconductor substrate, the floating gate comprising active portions insulated from the substrate by thin insulating layers, and inactive portions insulated from the substrate by thick insulating layers that do not conduct electrons, the active portions being principally P-type doped, and the inactive portions comprising at least one N-type doped area forming a portion of a PN junction.
    Type: Grant
    Filed: September 22, 2006
    Date of Patent: March 9, 2010
    Assignees: STMicroelectronics S.A., STMicroelectronics SAS, France Universite d'Aix-Marseille
    Inventors: Rachid Bouchakour, Virginie Bidal, Philippe Candelier, Richard Fournel, Philippe Gendrier, Romain Laffont, Pascal Masson, Jean-Michel Mirabel, Arnaud Regnier
  • Publication number: 20080116011
    Abstract: The present invention provides a method of supplying lubrication oil in cold rolling for stable rolling without heat scratches or slip and realizing high productivity and improvement of the specific consumption of lubrication oil, that is, a method of supplying lubrication oil in cold rolling for lubricating rolling in cold tandem rolling of metal sheet by supplying a predetermined kind of emulsion lubrication oil comprised of a mixture of rolling oil and water at the rolling stand inlet side from nozzles, the method of supplying lubrication oil in cold rolling characterized by measuring or estimating the pressure in the lubrication nozzle pipe (lubrication nozzle pressure), controlling the lubrication nozzle pressure of any rolling stand where lubrication is liable to become excessive with the predetermined emulsion lubrication oil to 0.5 MPa or more, and, while doing so, supplying the lubrication oil to the roll bite inlet of the stand by direct injection.
    Type: Application
    Filed: November 17, 2005
    Publication date: May 22, 2008
    Inventors: Yoshiki Takahama, Toshiyuki Shiraishi, Shigeru Ogawa, Luc Vanel, Guy Hauret, Maxime Laugier, Pascal Masson
  • Publication number: 20080087066
    Abstract: The present invention provides a method for supplying lubricant to various kinds of steel sheets with different qualities in cold rolling without any restrictions, such as lubricant supplying apparatus or lubrication conditions. This method comprises storing two or more kinds of lubricant such as A and B, having different compositions, selecting one lubricant or a mixture lubricant of the above A and B in accordance with the friction coefficient between the steel sheet to be cold rolled and a work-rolls, and supplying an emulsion comprising a mixture of the lubricant A and/or B and heated water.
    Type: Application
    Filed: November 17, 2005
    Publication date: April 17, 2008
    Inventors: Yoshiki Takahama, Toshiyuki Shiraishi, Shigeru Ogawa, Luc Vanel, Guy Hauret, Maxime Laugier, Pascal Masson
  • Patent number: 7242621
    Abstract: The present invention relates to a floating-gate MOS transistor, comprising drain and source regions implanted into a silicon substrate, a channel extending between the drain and source regions, a tunnel oxide, a floating gate, a gate oxide and a control gate extending according to a determined gate length. According to the present invention, the control gate comprises a small gate and a large gate arranged side by side and separated by an electrically insulating material. Application to the production of memory cells without access transistor, and to the implementation of an erase-program method with reduced electrical stress for the tunnel oxide.
    Type: Grant
    Filed: June 17, 2005
    Date of Patent: July 10, 2007
    Assignees: STMicroelectronics Rousset SAS, Universite d'Aix Marseille I
    Inventors: Jean-Michel Mirabel, Arnaud Regnier, Rachid Bouchakour, Romain Laffont, Pascal Masson
  • Publication number: 20070069278
    Abstract: A non-volatile memory point including a floating gate placed above a semiconductor substrate, the floating gate comprising active portions insulated from the substrate by thin insulating layers, and inactive portions insulated from the substrate by thick insulating layers that do not conduct electrons, the active portions being principally P-type doped, and the inactive portions comprising at least one N-type doped area forming a portion of a PN junction.
    Type: Application
    Filed: September 22, 2006
    Publication date: March 29, 2007
    Applicants: STMicroelectronics S.A., STMicroelectronics (Rousset) SAS, FRANCE UNIVERSITE D'AIX-MARSEILLE I
    Inventors: Rachid Bouchakour, Virginie Bidal, Philippe Candelier, Richard Fournel, Philippe Gendrier, Romain Laffont, Pascal Masson, Jean-Michel Mirabel, Arnaud Regnier
  • Publication number: 20060169373
    Abstract: The invention relates to a method for continuous direct casting of a metal strip, whereby said strip is cast by solidification of liquid metal in an ingot mould with cooled moving walls and a hot rolling of said strip is carried out in line, characterised in that a product is applied to the surface of the strip on exit from the ingot, which leaves a layer of lubricant on the surface when the strip is hot rolled and which causes a gas to be given off which contributes to the protection of said surface from oxidation. The invention further relates to a continuous direct casting plant for a thin metal strip, of the type comprising an ingot mould with moving cooled walls, where the solidification of said strip takes place and an in-line hot rolling unit for said solidified strip, characterised in comprising means for application of a product to the surface of said strip at the exit from the ingot, which leaves a layer of lubricant on the surface at the entry to the hot rolling unit.
    Type: Application
    Filed: June 8, 2004
    Publication date: August 3, 2006
    Inventors: Anne Dez, Pascal Masson, Michel Faral, Jean-Michel Reyter, Giorgio Porcu, Jean-Michel Damasse
  • Publication number: 20050286303
    Abstract: The present invention relates to a floating-gate MOS transistor, comprising drain and source regions implanted into a silicon substrate, a channel extending between the drain and source regions, a tunnel oxide, a floating gate, a gate oxide and a control gate extending according to a determined gate length. According to the present invention, the control gate comprises a small gate and a large gate arranged side by side and separated by an electrically insulating material. Application to the production of memory cells without access transistor, and to the implementation of an erase-program method with reduced electrical stress for the tunnel oxide.
    Type: Application
    Filed: June 17, 2005
    Publication date: December 29, 2005
    Applicants: STMicroelectronics Rousset SAS, Universite d'Aix Marseille I
    Inventors: Jean-Michel Mirabel, Arnaud Regnier, Rachid Bouchakour, Romain Laffont, Pascal Masson