Abstract: A method of manufacturing a semiconductor device is provided. The method includes attaching a first semiconductor die to a first die pad of a first leadframe and attaching a second semiconductor die to a second die pad of a second leadframe. The first leadframe is attached to the second leadframe by way of a non-conductive adhesive. A first plurality of leads of the first leadframe are interleaved with leads of a second plurality of leads of the second leadframe. The first and second semiconductor die and portions of the first and second leadframes are encapsulated with an encapsulant.

Abstract: A method of manufacturing a packaged semiconductor device is provided. The method includes attaching a semiconductor die to a package substrate. A bond pad of the semiconductor die is coupled to an antenna radiator formed on the package substrate. A waveguide is attached to the package substrate. An opening of the waveguide includes sidewalls substantially surrounding the antenna radiator. An epoxy material is deposited over at least a portion of the package substrate while leaving the opening void of epoxy material.

Abstract: A method of manufacturing a packaged semiconductor device is provided. The method includes attaching a semiconductor die to a package substrate. A bond pad of the semiconductor die is coupled to an antenna radiator formed on the package substrate. A waveguide is attached to the package substrate. An opening of the waveguide includes sidewalls substantially surrounding the antenna radiator. An epoxy material is deposited over at least a portion of the package substrate while leaving the opening void of epoxy material.

Abstract: The invention relates to an electronic component with Sn rich deposit layer on the part for electric connection, wherein the Sn rich deposit layer is a fine grained Sn rich deposit layer composed of grains with smaller size in the direction perpendicular to the deposit surface than in the direction parallel to the deposit surface. It also relates to a process for plating an electronic component, so as to form a Sn rich deposit layer on the part for electric connection, comprising the steps of: adjusting the composition of tin plating solution in which starter additive and brighter additive are included; moving the electronic component through the tin plating solution, so as to form a fine grained Sn rich deposit layer on the part for electric connection. As compared with the prior art, the invention can validly inhibit the whisker growth with low cost and reliable property.

Abstract: The invention relates to an electronic component with Sn rich deposit layer on the part for electric connection, wherein the Sn rich deposit layer is a fine grained Sn rich deposit layer composed of grains with smaller size in the direction perpendicular to the deposit surface than in the direction parallel to the deposit surface. It also relates to a process for plating an electronic component, so as to form a Sn rich deposit layer on the part for electric connection, comprising the steps of: adjusting the composition of tin plating solution in which starter additive and brighter additive are included; moving the electronic component through the tin plating solution, so as to form a fine grained Sn rich deposit layer on the part for electric connection. As compared with the prior art, the invention can validly inhibit the whisker growth with low cost and reliable property.