Abstract: The present invention provides photoluminescent iron-doped barium stannate materials absorbing ultraviolet (UV) light and exhibiting strong near-infrared (NIR) luminescence. Such materials exhibit increased integrated photoluminescence intensity in comparison to known BaSnO3 and iron-doped barium stannate materials, and therefore they are particularly useful for the production of photoluminescent security ink compositions and transparent covert security features with improved anti-counterfeiting resistance that can be used for protection of documents and articles against counterfeit and illegal reproduction.

Abstract: The present invention provides photoluminescent iron-doped barium stannate materials absorbing ultraviolet (UV) light and exhibiting strong near-infrared (NIR) luminescence. Such materials exhibit increased integrated photoluminescence intensity in comparison to known BaSnO3 and iron-doped barium stannate materials, and therefore they are particularly useful for the production of photoluminescent security ink compositions and transparent covert security features with improved anti-counterfeiting resistance that can be used for protection of documents and articles against counterfeit and illegal reproduction.

Abstract: A dielectric ceramic composition in a multilayer ceramic capacitor with a composition of formula: {[(CaO)t(SrO)1-t]m[(ZrO2)v(TiO2)1-v]}1-s-xAsEx wherein: A is a transition metal oxide; E is an oxide of an element selected from the group consisting of Ge, Si, Ga and combination thereof; m is 0.98 to 1.02; t is 0.50 to 0.90; v is 0.8 to 1.0; s and x are selected from the group consisting of: a) 0?x?0.08, 0.0001?s?0.043 and x?1.86s; and b) 0?0.0533, 0.0001?s?0.08 and x?0.667s.

Abstract: A dielectric ceramic composition in a multilayer ceramic capacitor with a composition of formula: {[(CaO)t(SrO)1-t]m[(ZrO2)v(TiO2)1-v]}1-s-xAsEx wherein: A is a transition metal oxide; E is an oxide of an element selected from the group consisting of Ge, Si, Ga and combinations thereof; m is 0.98 to 1.02; t is 0.50 to 0.90; v is 0.8 to 1.0; s and x are selected from the group consisting of: a) 0?x?0.08, 0.0001?s?0.043 and x?1.86s; and b) 0?x?0.0533, 0.0001?s?0.08 and x?0.667s.

Abstract: A dielectric ceramic composition in a multilayer ceramic capacitor with a composition of formula: {[(CaO)t(SrO)1-t]m[(ZrO2)v(TiO2)1-v]}1-s-xAsEx wherein: A is a transition metal oxide; E is an oxide of an element selected from the group consisting of Ge, Si, Ga and combinations thereof; m is 0.98 to 1.02; t is 0.50 to 0.90; v is 0.8 to 1.0; s and x are selected from the group consisting of: a) 0?x?0.08, 0.0001?s?0.043 and x?1.86s; and b) 0?x?0.0533, 0.0001?s?0.08 and x?0.667s.

Abstract: A dielectric ceramic composition in a multilayer ceramic capacitor with a composition of formula: {[(CaO)t(SrO)1-t]m[(ZrO2)v(TiO2)1-v]}1-s-xAsEx wherein: A is a transition metal oxide; E is an oxide of an element selected from the group consisting of Ge, Si, Ga and combinations thereof; m is 0.98 to 1.02; t is 0.50 to 0.90; v is 0.8 to 1.0; s and x are selected from the group consisting of: a) 0?x?0.08, 0.0001?s?0.043 and x?1.86s; and b) 0?x?0.0533, 0.0001?s?0.08 and x?0.667s.

Abstract: A dielectric ceramic composition in a multilayer ceramic capacitor with a composition of formula: {[(CaO)t(SrO)1-t]m[(ZrO2)v(TiO2)1-v]}1-s-xAsEx wherein: A is a transition metal oxide; E is an oxide of an element selected from the group consisting of Ge, Si, Ga and combinations thereof; m is 0.98 to 1.02; t is 0.50 to 0.90; v is 0.8 to 1.0; s and x are selected from the group consisting of: a) 0?x?0.08, 0.0001?s?0.043 and x?1.86s; and b) 0?x?0.0533, 0.0001?s?0.08 and x?0.667s.

Abstract: A process for forming a capacitive couple. The process includes forming a highly porous body of a conducting material with interior struts and voids in electrical contact. A dielectric layer is formed in the voids on the struts with a material having a dielectric constant above 100. An insulating layer is formed on the struts not covered by the dielectric layer. A conductive layer is formed on the dielectric layer and on the insulating layer.

Abstract: A dielectric ceramic composition in a multilayer ceramic capacitor with a composition of formula: {[(CaO)t(SrO)1-t]m[(ZrO2)v(TiO2)1-v]}1-s-xAsEx wherein: A is a transition metal oxide; E is an oxide of an element selected from the group consisting of Ge, Si, Ga and combination thereof; m is 0.98 to 1.02; t is 0.50 to 0.90; v is 0.8 to 1.0; s and x are selected from the group consisting of: a) 0?x?0.08, 0.0001?s?0.043 and x?1.86s; and b) 0?0.0533, 0.0001?s?0.08 and x?0.667s.

Abstract: A dielectric ceramic composition in a multilayer ceramic capacitor having a composition of formula: ((CaO)t(SrO)1-t(ZrO2)v(TiO2)1-v)1-s-x-y-zAsExGyHz wherein: A is a transition metal oxide; E is an oxide of a group III or IV element; G is an oxide of a group II element; H is an oxide of a lanthamide; t is 0.50 to 0.90; v is 0.8 to 1.0; s is 0.0001 to 0.08; x is 0 to 0.08; y is 0 to 0.20; and z is 0 to 0.20.

Abstract: A dielectric ceramic composition in a multilayer ceramic capacitor having a composition of formula: ((CaO)t(SrO)1-t(ZrO2)v(TiO2)1-v)1-s-x-y-zAsExGyHz wherein: A is a transition metal oxide; E is an oxide of a group III or IV element; G is an oxide of a group II element; H is an oxide of a lanthanide; t is 0.50 to 0.90; v is 0.8 to 1.0; s is 0.0001 to 0.08; x is 0 to 0.08; y is 0 to 0.20; and z is 0 to 0.20.

Abstract: A ceramic capacitor is disclosed. The capacitor comprises a plurality of base metal inner electrode layers, a plurality of ceramic dielectric layers between the inner electrode layers, and external electrodes in electrical conductivity with the inner electrode layers. At least one secondary component having an intentionally added chemistry is dispersed in the inner electrode layers and/or the dielectric layers. The chemistry evolves an oxidizing species in a controlled manner, such that it offsets localized highly reducing atmospheres that are present when the capacitor is fired in a reducing atmosphere, thereby promoting enhanced electrode connectivity in thin layer base metal multilayer capacitors.

Abstract: The invention relates to thin film single layers, electronic components such as multilayer capacitors which utilize thin film layers, and to their methods of manufacture. Chemical solution deposition and microcontact printing of dielectric and electrode layers are disclosed. High permittivity BaTiO3 multilayer thin film capacitors are prepared on Ni foil substrates by microcontact printing and by chemical solution deposition. Multilayer capacitors with BaTiO3 dielectric layers and LaNiO3 internal electrodes are prepared, enabling dielectric layer thicknesses of 1 ?m or less. Microcontact printing of precursor solutions of the dielectric and electrode layers is used.

Abstract: A dielectric ceramic, and capacitor with the ceramic, wherein the ceramic has: about 94-99.9 wt % a first component defined by Formula 1; [(Ca1-xSrx)O]m(Zr1-yTiy)O2??Formula 1 wherein: x is no more than about 0.6; and y is no more than about 0.1; and m is at least about 0.85 to no more than about 1.15; and about 0.1-5 wt % a secondary component defined by Formula 2; aSiO2-b[?B2O3—(1-?)Li2O]-cAO??Formula 2 wherein: a, b and c are selected to lie within the region defined by points A(a=15, b=0, c=85), B(a=70, b=0, c=30), C(a=0, b=70, c=30) and D(a=0, b=15, c=85) of a ternary diagram wherein a is mole percent SiO2; b is mole percent ?B2O3—(1-?)Li2O; and c is mole percent AO and a+b+c=100 including the lines BC, CD and AD but excluding the line AB; a is 0 to 1; A is selected from Mg, Ca, Sr, Ba or a combination thereof; and 0-2 wt % MnO2.

Abstract: A dielectric ceramic composition in a multilayer ceramic capacitor having a composition of formula: ((CaO)t(SrO)1-t(ZrO2)v(TiO2)1-s-x-y-zAsExGyHz wherein: A is a transition metal oxide; E is an oxide of a group III or IV element; G is an oxide of a group II element; H is an oxide of a lanthanide; t is 0.50 to 0.90; v is 0.8 to 1.0; s is 0.0001 to 0.08; x is 0 to 0.08; y is 0 to 0.20; and z is 0 to 0.20.