Patents by Inventor Pascal Ribot

Pascal Ribot has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6873088
    Abstract: A resonator formed by the steps of defining an active single-crystal silicon layer delimited by a buried insulator layer, depositing a silicon-germanium layer by a selective epitaxy method so that the silicon-germanium layer grows above the active single-crystal silicon area, depositing by a non-selective epitaxy method a silicon layer and etching it according to a desired contour, and removing the silicon-germanium by a selective etching with respect to the silicon and to the insulator.
    Type: Grant
    Filed: April 1, 2002
    Date of Patent: March 29, 2005
    Assignee: STMicroelectronics S.A.
    Inventors: Thomas Skotnicki, Didier Dutartre, Pascal Ribot
  • Patent number: 6642108
    Abstract: A non-volatile memory includes a floating gate extending in a substrate between source and drain regions. A channel region may be confined by two insulating layers. The invention is particularly applicable to EPROM, EEPROM, Flash and single-electron memories using CMOS technology.
    Type: Grant
    Filed: October 18, 2002
    Date of Patent: November 4, 2003
    Assignee: STMicroelectronics SA
    Inventors: Thomas Skotnicki, Didier Dutartre, Pascal Ribot, Maryse Paoli, Richard Fournel
  • Publication number: 20030038315
    Abstract: A non-volatile memory includes a floating gate extending in a substrate between source and drain regions. A channel region may be confined by two insulating layers. The invention is particularly applicable to EPROM, EEPROM, Flash and single-electron memories using CMOS technology.
    Type: Application
    Filed: October 18, 2002
    Publication date: February 27, 2003
    Applicant: STMicroelectronics S.A.
    Inventors: Thomas Skotnicki, Didier Dutartre, Pascal Ribot, Maryse Paoli, Richard Fournel
  • Publication number: 20020153808
    Abstract: A resonator formed by the steps of defining an active single-crystal silicon layer delimited by a buried insulator layer, depositing a silicon-germanium layer by a selective epitaxy method so that the silicon-germanium layer grows above the active single-crystal silicon area, depositing by a non-selective epitaxy method a silicon layer and etching it according to a desired contour, and removing the silicon-germanium by a selective etching with respect to the silicon and to the insulator.
    Type: Application
    Filed: April 1, 2002
    Publication date: October 24, 2002
    Inventors: Thomas Skotnicki, Didier Dutartre, Pascal Ribot
  • Publication number: 20010050387
    Abstract: A non-volatile memory includes a floating gate extending in a substrate between source and drain regions. A channel region may be confined by two insulating layers. The invention is particularly applicable to EPROM, EEPROM, Flash and single-electron memories using CMOS technology.
    Type: Application
    Filed: March 21, 2001
    Publication date: December 13, 2001
    Applicant: STMicroelectronics S.A.
    Inventors: Thomas Skotnicki, Didier Dutartre, Pascal Ribot, Maryse Paoli, Richard Fournel