Abstract: A laterally diffused metal-oxide-semiconductor (LDMOS) transistor that provides immunity from shallow trench isolation (STI) cone defects is disclosed. The LDMOS may include a doped body and a high voltage well formed in a substrate, a gate electrode above the doped body, an STI region, including a dielectric material, within the high voltage well, a cap layer covering a portion of the STI region, a poly gate spanning from the gate electrode to the high voltage well, and a field plate covering a portion of the cap layer and a metal shield spanning the field plate and the poly gate and electrically coupling the high voltage well to the doped body. The STI region may be spaced apart from an edge of the high voltage well by a first distance. An edge of the cap layer may be located a second distance from an edge of the STI region.